CN107144299A - A kind of sonac - Google Patents

A kind of sonac Download PDF

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Publication number
CN107144299A
CN107144299A CN201710345882.9A CN201710345882A CN107144299A CN 107144299 A CN107144299 A CN 107144299A CN 201710345882 A CN201710345882 A CN 201710345882A CN 107144299 A CN107144299 A CN 107144299A
Authority
CN
China
Prior art keywords
layer
piezoelectric
sonac
electrode
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710345882.9A
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Chinese (zh)
Inventor
任莲
赵鹏起
周经国
韩海生
孙鹏
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Jiamusi University
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Jiamusi University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jiamusi University filed Critical Jiamusi University
Priority to CN201710345882.9A priority Critical patent/CN107144299A/en
Publication of CN107144299A publication Critical patent/CN107144299A/en
Pending legal-status Critical Current

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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01DMEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/48Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using wave or particle radiation means

Abstract

The invention discloses a kind of sonac, including:Ultrasound sends layer, substrate and ultrasonic reception layer, and ultrasound, which sends layer, includes first electrode layer and multiple piezoelectric blocks, and one end of the remote first electrode layer of multiple piezoelectric blocks is provided with the second electrode lay;Ultrasonic reception layer includes the 3rd electrode layer of at least one piezoelectric layer and setting over the piezoelectric layer;The second electrode lay and piezoelectric layer are arranged on the both sides of substrate by adhesive-layer;Multiple piezoelectric blocks are piezo-electric crystal, piezoelectric ceramics and/or piezoelectric polymer polymer, and piezoelectric layer piezo-electric crystal, piezoelectric ceramics and/or piezoelectric polymer polymer.To sum up, a kind of sonac provided in an embodiment of the present invention, by sending the piezoelectric layer that layer sets multiple different piezoelectrics uniformly arranged to be made in ultrasound, and the piezoelectric layer of a variety of different piezoelectrics is set in ultrasonic reception layer, so as to widen the frequency range of AC-input voltage, enhance ultrasonic wave and send energy, improve accuracy and the sensitivity of sonac.

Description

A kind of sonac
Technical field
The present invention relates to sensor field, more particularly to a kind of sonac.
Background technology
Ultrasonic wave is the mechanical wave that vibration frequency is higher than 20KHz, and it has, and that frequency is high, wavelength is short and diffraction phenomenon is few etc. is excellent Point, particularly good directionality, ray can be turned into and the features such as direction propagation.Conventional ultrasonic sensor is by piezoelectric unit group Into such as use piezoelectric membrane both can also receive ultrasonic wave as piezoelectric with reflectance ultrasound ripple.Therefore, ultrasonic wave Sensor has been widely used in the fields such as industry, national defence, fire-fighting, electronics and medical treatment.
Ultrasonic sensor of the prior art, the absorbed layer of ultrasonic wave is set in substrate both sides and layer is sent, while The absorbed layer of ultrasonic wave and the surface of transmission layer are provided with electrode layer and matching layer etc..The absorbed layer and transmission layer of ultrasonic wave pass through pressure The inverse piezoelectric effect and piezo-electric effect of electric material are realized.
However, ultrasonic sensor of the prior art, because the resonant frequency of fixed piezoelectric is single so that super Sonic transducer is limited the alternating current voltage frequency for being applied to the input of electrode both sides, so as to reduce the sensitivity of device.
The content of the invention
The embodiments of the invention provide a kind of sonac, sonac sensitivity difference in the prior art is solved Problem.
The embodiments of the invention provide a kind of sonac, including:Ultrasound sends layer, substrate and ultrasonic reception layer, institute Stating ultrasound transmission layer includes first electrode layer and the multiple piezoelectric blocks being evenly distributed in the first electrode layer, the multiple pressure One end of the remote first electrode layer of electric block is provided with the second electrode lay;The ultrasonic reception layer includes at least one piezoelectricity Layer and the 3rd electrode layer being arranged on the piezoelectric layer;The second electrode lay and the piezoelectric layer are arranged on by adhesive-layer The both sides of the substrate;The multiple piezoelectric blocks are piezo-electric crystal, piezoelectric ceramics and/or piezoelectric polymer polymer, and described Piezoelectric layer piezo-electric crystal, piezoelectric ceramics and/or piezoelectric polymer polymer.
Preferably, a kind of sonac that the present invention is provided, the side of the close ultrasonic reception layer of the substrate Surface is provided with the thin film transistor (TFT) of multiple matrix arrangements.
Preferably, a kind of sonac that the present invention is provided, the remote the multiple piezoelectric blocks of the first electrode layer Side be provided with protective layer.
Preferably, a kind of sonac that the present invention is provided, the outer surface of the sonac sets encapsulated layer.
Preferably, a kind of sonac that the present invention is provided, the substrate, which is provided with, to be used to connect external control circuit Electrical connector, the first electrode layer, the second electrode lay and the 3rd electrode layer are electrically connected with the electrical connector.
To sum up, a kind of sonac provided in an embodiment of the present invention, multiple uniform rows are set by sending layer in ultrasound The piezoelectric blocks that the different piezoelectrics of cloth are made, and the piezoelectric layer of a variety of different piezoelectrics is set in ultrasonic reception layer, so that Widened the frequency range of AC-input voltage, enhance ultrasonic wave send energy, improve sonac accuracy and Sensitivity.
Brief description of the drawings
Fig. 1 is a kind of structural representation of sonac provided in an embodiment of the present invention.
Brief description of the drawings:100- ultrasounds send layer, 101- first electrode layers, 102- piezoelectric blocks, 103- the second electrode lays, 200- Substrate, 300- ultrasonic receptions layer, 301- piezoelectric layers, the electrode layers of 302- the 3rd.
Embodiment
With reference to the accompanying drawing in the present invention, the technical scheme to the embodiment of the present invention carries out clear, complete description, shown So, described embodiment is a part of embodiment of the present invention, rather than whole embodiments.Based on the implementation in the present invention Example, the every other embodiment that those of ordinary skill in the art are obtained on the premise of creative work is not made all should Belong to the scope of protection of the invention.
For the ease of understanding and illustrating, the sonac of the embodiment of the present invention is elaborated below by Fig. 1.Fig. 1 institutes It is shown as a kind of structural representation of sonac provided in an embodiment of the present invention.As shown in figure 1, the sensor can include:
Ultrasound send layer 100, substrate 200 and ultrasonic reception layer 300, ultrasound send layer 100 include first electrode layer 101 and It is evenly distributed on multiple piezoelectric blocks 102 in first electrode layer 101, the one of the remote first electrode layer 101 of multiple piezoelectric blocks 102 End is provided with the second electrode lay 103.Ultrasonic reception layer 300 includes at least one piezoelectric layer 301 and be arranged on piezoelectric layer 301 the Three electrode layers 302.The second electrode lay 103 and piezoelectric layer 301 are arranged on the both sides of substrate 200 by adhesive-layer 400.Multiple piezoelectricity Block 301 is piezo-electric crystal, piezoelectric ceramics and/or piezoelectric polymer polymer.
Specifically, a kind of sonac provided in an embodiment of the present invention, can set gradually super in the both sides of substrate 200 Sound sends layer 100 and ultrasonic reception layer 300.That is the first electrode layer 101 of ultrasound transmission layer 100 can be preferably golden by conductance Category material is made.Conductive metal film such as can be coated with semiconductor silicon substrate using sputtering technique.Then lead being coated with Continue to electroplate the piezoelectric material layer of different materials in the side of electric layer.For example.The first electrode layer of conductive layer can be coated with first One layer of piezoelectric single crystal, such as quartz crystal are set on 101.Then form multiple equal using semiconductor technologies such as photoetching or etchings The piezoelectric blocks 102 of even distribution.Further, it is possible to continue to set one layer of piezoceramics layer on this basis, then retaining original Piezo-electric crystal piezoelectric blocks 102 on the premise of, re-form the piezoelectric blocks 102 of multiple equally distributed piezoceramic materials, then Continue the piezoelectric layer of one floor height Molecularly Imprinted Polymer of setting, to form multiple piezoelectric blocks 102.It should be understood that above-mentioned three kinds of different materials Piezoelectric blocks 102 be evenly distributed on for compartment of terrain successively in first electrode layer 101.Further, it is necessary in multiple piezoelectric blocks 102 Top sets the second electrode lay 103.For example, using techniques such as sputtering or plated films, in multiple piezoelectric blocks 102 away from the first piezoelectricity One end plating of layer 102 sets the good metal level of conductance.In addition, ultrasonic reception layer 300 can include at least one piezoelectric layer 301 And the 3rd piezoelectric layer 302.The good metal of conductance is being coated with silicon chip or glass substrate using same method, made For the 3rd electrode layer 302, the piezoelectric layer 302 of different materials is then set gradually on the conductive layer, such as piezo-electric crystal, ceramics is brilliant Body or high molecular polymer etc..Finally, viscose is coated in the two sides of substrate 200, forms adhesive-layer 400, and ultrasound is sent The second electrode lay 103 of layer 100 is attached on the adhesive-layer 400 of the side of substrate 200, by the piezoelectric layer 301 of ultrasonic reception layer 300 It is attached on the mucigel 400 of the opposite side of substrate 200, so as to constitute the sonac.
It should be understood that the compartment of terrain of piezoelectric blocks 102 row of two or more piezoelectrics making according to actual conditions, can be chosen Spaced quartz crystal piezoelectric blocks, piezoelectric ceramics piezoelectric blocks, macromolecule is respectively prepared in cloth in first electrode layer 101, such as Polymer piezo block or nitridation graphene piezoelectric blocks in it is any two or more.Accordingly, the piezoelectricity in ultrasonic reception layer 300 Layer is also superimposed as sending a variety of piezoelectrics of identical in layer 100 with ultrasound.Obviously, the present invention is without limitation.
Therefore, a kind of sonac provided in an embodiment of the present invention, multiple uniform rows are set by sending layer in ultrasound The piezoelectric layer that the different piezoelectrics of cloth are made, and the piezoelectric layer of a variety of different piezoelectrics is set in ultrasonic reception layer, so that Widened the frequency range of AC-input voltage, enhance ultrasonic wave send energy, improve sonac accuracy and Sensitivity.
It is preferred that, the side of the substrate 200 in the present embodiment can be arranged to the thin film transistor (TFT) of multiple matrix arrangements, and And cause the side close to ultrasonic reception layer 300, so as to carry out electrical couplings with ultrasonic reception layer 300.
Further, in order to increase the service life of the sonac, it can be pressed in the remote of first electrode layer 101 The side of electric block 102 is provided with protective layer.
Optionally, in order to further improve the sonac, encapsulation can be set in the outer surface of the sonac Layer.
Optionally, substrate 200 is provided with the electrical connector for being used for connecting external control circuit, first electrode layer 102, second The electrode layer 302 of electrode layer 103 and the 3rd is electrically connected with electrical connector.
In summary, a kind of sonac provided in an embodiment of the present invention, sets multiple equal by sending layer in ultrasound The piezoelectric layer that the different piezoelectrics of even arrangement are made, and the piezoelectric layer of a variety of different piezoelectrics is set in ultrasonic reception layer, So as to widen the frequency range of AC-input voltage, enhance ultrasonic wave and send energy, improve the accurate of sonac Property and sensitivity.
Disclosed above is only several specific embodiments of the present invention, and still, the embodiment of the present invention is not limited to this, is appointed What what those skilled in the art can think change should all fall into protection scope of the present invention.

Claims (5)

1. a kind of sonac, it is characterised in that including:Ultrasound sends layer (100), substrate (200) and ultrasonic reception layer (300), the ultrasound sends layer (100) and includes first electrode layer (101) and be evenly distributed in the first electrode layer (101) Multiple piezoelectric blocks (102), one end of the remote first electrode layer (101) of the multiple piezoelectric blocks (102) is provided with the Two electrode layers (103);The ultrasonic reception layer (300) includes at least one piezoelectric layer (301) and is arranged on the piezoelectric layer (301) the 3rd electrode layer (302) on;The second electrode lay (103) and the piezoelectric layer (301) pass through adhesive-layer (400) It is affixed on the both sides of the substrate (200);The multiple piezoelectric blocks (102) are piezo-electric crystal, piezoelectric ceramics and/or piezoelectricity high score Sub- polymer, and the piezoelectric layer (301) is piezo-electric crystal, piezoelectric ceramics and/or piezoelectric polymer polymer.
2. a kind of sonac according to claim 1, it is characterised in that the substrate (200) it is close described super One side surface of sound reception layer (300) is provided with the thin film transistor (TFT) of multiple matrix arrangements.
3. according to a kind of sonac described in claim 1, it is characterised in that the remote institute of the first electrode layer (101) The side for stating multiple piezoelectric blocks (102) is provided with protective layer.
4. a kind of sonac according to claim 1, it is characterised in that the outer surface of the sonac is set Encapsulated layer.
5. a kind of sonac according to claim 1, it is characterised in that the substrate (200), which is provided with, to be used to connect Connect the electrical connector of external control circuit, the first electrode layer (102), the second electrode lay (103) and the 3rd electrode layer (302) electrically connected with the electrical connector.
CN201710345882.9A 2017-05-17 2017-05-17 A kind of sonac Pending CN107144299A (en)

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CN201710345882.9A CN107144299A (en) 2017-05-17 2017-05-17 A kind of sonac

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Application Number Priority Date Filing Date Title
CN201710345882.9A CN107144299A (en) 2017-05-17 2017-05-17 A kind of sonac

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CN107144299A true CN107144299A (en) 2017-09-08

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109141493A (en) * 2018-09-25 2019-01-04 中国科学院电工研究所 The ultrasonic probe and its ultrasonic image-forming system of optical drive
CN109492470A (en) * 2017-09-12 2019-03-19 南昌欧菲生物识别技术有限公司 Ultrasonic sensor and electronic device
CN110234056A (en) * 2019-06-21 2019-09-13 京东方科技集团股份有限公司 Energy converter and preparation method thereof, transducing head

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104078452A (en) * 2013-03-28 2014-10-01 精工爱普生株式会社 Piezoelectric element module, and manufacturing method for piezoelectric element module
CN104915637A (en) * 2015-04-22 2015-09-16 麦克思股份有限公司 Manufacturing method of fingerprint identification module
JP2016526165A (en) * 2013-06-03 2016-09-01 クアルコム,インコーポレイテッド Ultrasonic receiver having a coated piezoelectric layer
CN105997146A (en) * 2016-06-27 2016-10-12 麦克思商务咨询(深圳)有限公司 Ultrasonic sensor
US20170157647A1 (en) * 2014-07-09 2017-06-08 Seiko Epson Corporation Ultrasound sensor and method of manufacturing thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104078452A (en) * 2013-03-28 2014-10-01 精工爱普生株式会社 Piezoelectric element module, and manufacturing method for piezoelectric element module
JP2016526165A (en) * 2013-06-03 2016-09-01 クアルコム,インコーポレイテッド Ultrasonic receiver having a coated piezoelectric layer
US20170157647A1 (en) * 2014-07-09 2017-06-08 Seiko Epson Corporation Ultrasound sensor and method of manufacturing thereof
CN104915637A (en) * 2015-04-22 2015-09-16 麦克思股份有限公司 Manufacturing method of fingerprint identification module
CN105997146A (en) * 2016-06-27 2016-10-12 麦克思商务咨询(深圳)有限公司 Ultrasonic sensor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109492470A (en) * 2017-09-12 2019-03-19 南昌欧菲生物识别技术有限公司 Ultrasonic sensor and electronic device
CN109141493A (en) * 2018-09-25 2019-01-04 中国科学院电工研究所 The ultrasonic probe and its ultrasonic image-forming system of optical drive
CN109141493B (en) * 2018-09-25 2020-08-25 中国科学院电工研究所 Light-driven ultrasonic probe and ultrasonic imaging system thereof
CN110234056A (en) * 2019-06-21 2019-09-13 京东方科技集团股份有限公司 Energy converter and preparation method thereof, transducing head
CN110234056B (en) * 2019-06-21 2021-01-12 京东方科技集团股份有限公司 Transducer, preparation method thereof and transducer device

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Application publication date: 20170908