JPS5823440A - Device for manufacture of semiconductor - Google Patents
Device for manufacture of semiconductorInfo
- Publication number
- JPS5823440A JPS5823440A JP12226281A JP12226281A JPS5823440A JP S5823440 A JPS5823440 A JP S5823440A JP 12226281 A JP12226281 A JP 12226281A JP 12226281 A JP12226281 A JP 12226281A JP S5823440 A JPS5823440 A JP S5823440A
- Authority
- JP
- Japan
- Prior art keywords
- wall
- wafer
- semiconductor
- waste liquid
- developer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は半導体製造装置に係シ、特に半導体装置及び
写真蝕刻用マスクの写真蝕刻時に使用する。半導体製造
装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to semiconductor manufacturing equipment, and is particularly used for photolithography of semiconductor devices and photolithography masks. The present invention relates to semiconductor manufacturing equipment.
従来、写真蝕刻時の現倫工程に於て、上カップと下カッ
プを密着させて、その中でウェノ)−ス及びマスクを現
儂処理する装置に於ては、上カップ壁面を二重にし、そ
の下方部など一方向のみから使用済み廃液を吸引してい
え。この方法によれば。Conventionally, in the photo-etching process, the upper cup and lower cup are brought into close contact with each other, and in the equipment in which the wax and mask are processed, the upper cup wall surface is doubled. , it is not possible to suck up the used waste liquid only from one direction, such as the lower part. According to this method.
回転によってふシきられた使用済み廃液が多量に吸引口
方向に集中し、吸引力不足の原因とな9廃液の再付着を
まねく一因と表っていた。また長時間装置を使用した場
合には、廃液に含まれる一感光性樹脂が固形化し、それ
が吸引口をふさぐ為、吸引力の著しい低下となシそれが
重大な現曹不足をおこす原因となっていた。A large amount of the used waste liquid that was sealed off by the rotation was concentrated in the direction of the suction port, which was considered to be one of the causes of the re-adhesion of the waste liquid, which caused insufficient suction power. In addition, if the device is used for a long time, the photosensitive resin contained in the waste liquid will solidify and block the suction port, resulting in a significant decrease in suction power, which may cause a serious shortage of sodium hydroxide. It had become.
この発明の目的は、使用済み廃液を円滑にしか屯確実に
吸引しすばやく装置外へ排気し、欠陥の表い半導体装置
を製造する装置を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide an apparatus for manufacturing semiconductor devices that exhibit defects by smoothly and reliably sucking up used waste liquid and quickly exhausting it to the outside of the apparatus.
この発明の半導体製造装置は、使用済みの廃液を確実に
吸引する為に、二重になったカップの内壁に無数の穴を
あけ、従来の一方向からの吸引ではなく、あらゆる方向
から使用済み廃液を吸引できることを特徴とするもので
ある。In order to reliably suck in used waste liquid, the semiconductor manufacturing equipment of this invention has numerous holes in the inner wall of the double cup. It is characterized by the ability to suck out waste liquid.
この発明の半導体製造装置によれば、従来ありた廃液が
吸引口をふさぐという事はなくなり、また、吸引口が、
全方面にあシ、長時間の使用にも十分耐えうる構造であ
る為製品への廃液の影響は全くなくなシ1歩留シ向上に
大いに貢献するものである。According to the semiconductor manufacturing apparatus of the present invention, there is no longer a case where the waste liquid blocks the suction port, which was the case in the past, and the suction port can
Since it has a structure that can withstand long-term use, it has no influence on the product and greatly contributes to improving the yield.
次にこの発明の実施例につき図を用いて説明する。Next, embodiments of the present invention will be described with reference to the drawings.
第1図はこの発明の一実施例を説明するための半導体製
造装置の構造図である。この実施例の装置が製品を処理
するときの過程は次のとおシである。尚、説明を簡単に
する為に半導体装置の製造時の方法に従って説明する。FIG. 1 is a structural diagram of a semiconductor manufacturing apparatus for explaining an embodiment of the present invention. The process when the apparatus of this embodiment processes a product is as follows. Incidentally, in order to simplify the explanation, the explanation will be made according to the method used when manufacturing a semiconductor device.
まず1位置決めされた半導体基板(以下ウェハースと呼
ぶ)lが現像装置内に入ると1回転軸2があがシ、ウェ
ハースを固定する。次に下カップ3または上カザプ4が
移動して、密閉した空間をつくる。First, when a semiconductor substrate (hereinafter referred to as a wafer) l placed in one position enters the developing device, the one rotation shaft 2 is rotated to fix the wafer. Next, the lower cup 3 or upper cup 4 moves to create a sealed space.
第2図は従来の構造の装置が密閉された状態を示す。密
閉されるとノズル6より現像液またはリンス液が霧状に
なって噴霧し、ウェハース表面にあたる。このときウェ
ハースは現像の均一性を向上させる為に回転している。FIG. 2 shows a device of conventional construction in a sealed state. When the nozzle 6 is sealed, a developing solution or a rinsing solution is sprayed in a mist form and hits the wafer surface. At this time, the wafer is rotated to improve uniformity of development.
処理の終了した現像液及びり/ス液は上カザプの外壁7
.内壁8のすき間9から吸引され、排気口10を通って
装置外へ排気される。このとき、すき間9には多量の現
gl液及びリンス液が集中する為すき間9t1それらで
充清され、吸引力が著しく低下し1本来の役目をはたさ
なくなってしまう。さらに、廃液中には感光性樹脂の樹
脂分がかなり含まれている為、長時間使用した場合には
それらが固形化し、すき間9に蓄積される為、吸引口の
面積が著しく低下し。The developer solution and lysate solution that has been processed are placed on the outer wall 7 of the upper cap.
.. It is sucked in through the gap 9 in the inner wall 8 and exhausted to the outside of the device through the exhaust port 10. At this time, a large amount of current GL liquid and rinsing liquid are concentrated in the gap 9, and the gap 9t1 is filled with them, resulting in a significant decrease in suction power and 1 no longer fulfilling its original role. Furthermore, since the waste liquid contains a considerable amount of photosensitive resin, if used for a long time, it will solidify and accumulate in the gap 9, resulting in a significant reduction in the area of the suction port.
吸引力の低下をまねくが、さらに長時間使用した場合に
は完全に吸引口をふさいでしまい、廃液を全く排気しな
い状態にまでなり1重大な現像工程での不良をまねく原
因となる。This will lead to a decrease in suction power, but if used for a longer period of time, the suction port will be completely blocked and the waste liquid will not be exhausted at all, leading to serious defects in the developing process.
そこで1本発明実施例の装置の断面図を第3図に示す。Therefore, a sectional view of an apparatus according to an embodiment of the present invention is shown in FIG.
第3図にある内壁11は、従来のものとは違って、内壁
に無数の穴がおいている為、処理中にふシきられた廃液
は壁面のどの位置からも容易に捕収され、−ケ所に廃液
が集中するという事はない。従って、従来あったすき間
を廃液がふさいで吸引力を低下させる事という事は皆無
となり。The inner wall 11 shown in Fig. 3 is different from the conventional one because it has numerous holes, so the waste liquid that is covered during processing can be easily collected from any position on the wall surface. - There is no possibility that waste liquid will be concentrated in one place. Therefore, there is no possibility that the waste liquid would block the gaps that existed in the past and reduce the suction power.
捕収効率は飛躍的に向上する。さらに、装置を長時間使
用した場合でも、廃液の吸気口は、四方に無数にある為
、廃液の固形化が進んでも、固形化による影響はほとん
どなくな夛、装置の寿命は以前とくらべものにならない
ほどのびる。Capture efficiency is dramatically improved. Furthermore, even if the device is used for a long period of time, there are countless inlets for waste liquid on all sides, so even if the waste liquid solidifies, the effect of solidification is almost gone, and the life of the device is shortened compared to before. It stretches to the point where it doesn't become a problem.
以上のべてきたように1本発明による装置を用いれば、
現像工程における製品の欠陥率は著しく。As described above, if the device according to the present invention is used,
The defect rate of products during the development process is significant.
低下しその為、製品の歩留)向上に多大に貢献する。Therefore, it greatly contributes to improving the product yield.
上述の実施例において半導体装置の製造時に使用する―
置にそって説明を行って来たが、この装置が適用される
範囲はその他写真蝕割技術のいわゆる現像工程と呼ばれ
る工種で使用される装置に適用出来ることは言うまでも
ない。Used when manufacturing semiconductor devices in the above embodiments.
Although the explanation has been given along with the description, it goes without saying that this device can be applied to other devices used in the so-called developing process of photographic etching technology.
第1図は半導体製造装置(現像装置)の構造図で、1・
・・・・・ウェハース、2・・・・・・回転軸、3・・
・・・・下カップ、4・・・・・・上カップ、5・・・
・・・排気ホースである。
第2図は従来の装置が密閉された状態の断面図であり、
6・・・・・・現像処理用ノズル、−7・・・・・・上
カップ外壁、8・・・・・・上カヅプ内壁、9・・・・
・・内壁と外壁のすき間、10・・・・・・排気口であ
る。
第3図は本発明実施例の内壁を、含んだ断面図で11・
・・・・・実施例による内壁である。Figure 1 is a structural diagram of semiconductor manufacturing equipment (developing equipment).
...Wafer, 2... Rotating shaft, 3...
...Lower cup, 4...Upper cup, 5...
...It's an exhaust hose. Figure 2 is a cross-sectional view of the conventional device in a sealed state.
6... Development processing nozzle, -7... Upper cup outer wall, 8... Upper cup inner wall, 9...
... Gap between inner wall and outer wall, 10 ... Exhaust port. FIG. 3 is a sectional view including the inner wall of the embodiment of the present invention.
...Inner wall according to the example.
Claims (1)
の壁面が二重になりておシ、かつ皺壁面の内壁に無数の
穴が形成されている事を特徴とする半導体製造装置。[Claims] During the current process of photoetching technology in the semiconductor manufacturing process. The upper and lower cups are sealed to form a closed space. While rotating the wafers one by one inside the closed space. 1. A semiconductor manufacturing apparatus that performs a hardening process, characterized in that the upper cup has a double wall surface, and numerous holes are formed in the inner wall of the wrinkled wall surface.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12226281A JPS5823440A (en) | 1981-08-04 | 1981-08-04 | Device for manufacture of semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12226281A JPS5823440A (en) | 1981-08-04 | 1981-08-04 | Device for manufacture of semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5823440A true JPS5823440A (en) | 1983-02-12 |
Family
ID=14831597
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12226281A Pending JPS5823440A (en) | 1981-08-04 | 1981-08-04 | Device for manufacture of semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5823440A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59202630A (en) * | 1983-05-02 | 1984-11-16 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
US4688918A (en) * | 1985-06-05 | 1987-08-25 | Mitsubishi Denki Kabushiki Kaisha | Negative type photoresist developing apparatus |
US4755844A (en) * | 1985-04-30 | 1988-07-05 | Kabushiki Kaisha Toshiba | Automatic developing device |
JPH04110417U (en) * | 1992-02-27 | 1992-09-25 | 三菱農機株式会社 | Riding type seedling planting machine |
EP1271250A2 (en) * | 2001-06-21 | 2003-01-02 | Agfa-Gevaert N.V. | Method of developing a lithographic printing plate precursor |
US6645699B2 (en) | 2001-06-21 | 2003-11-11 | Agfa-Gevaert | Method of processing a lithographic printing plate precursor |
-
1981
- 1981-08-04 JP JP12226281A patent/JPS5823440A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59202630A (en) * | 1983-05-02 | 1984-11-16 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
US4755844A (en) * | 1985-04-30 | 1988-07-05 | Kabushiki Kaisha Toshiba | Automatic developing device |
US4688918A (en) * | 1985-06-05 | 1987-08-25 | Mitsubishi Denki Kabushiki Kaisha | Negative type photoresist developing apparatus |
JPH04110417U (en) * | 1992-02-27 | 1992-09-25 | 三菱農機株式会社 | Riding type seedling planting machine |
EP1271250A2 (en) * | 2001-06-21 | 2003-01-02 | Agfa-Gevaert N.V. | Method of developing a lithographic printing plate precursor |
US6645699B2 (en) | 2001-06-21 | 2003-11-11 | Agfa-Gevaert | Method of processing a lithographic printing plate precursor |
EP1271250A3 (en) * | 2001-06-21 | 2005-02-09 | Agfa-Gevaert N.V. | Method of developing a lithographic printing plate precursor |
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