JPS58225656A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS58225656A
JPS58225656A JP11030282A JP11030282A JPS58225656A JP S58225656 A JPS58225656 A JP S58225656A JP 11030282 A JP11030282 A JP 11030282A JP 11030282 A JP11030282 A JP 11030282A JP S58225656 A JPS58225656 A JP S58225656A
Authority
JP
Japan
Prior art keywords
cap
substrate
fixed
semiconductor element
elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11030282A
Other languages
Japanese (ja)
Inventor
Masanobu Obara
小原　雅信
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11030282A priority Critical patent/JPS58225656A/en
Publication of JPS58225656A publication Critical patent/JPS58225656A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15312—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/162—Disposition
    • H01L2924/16251—Connecting to an item not being a semiconductor or solid-state body, e.g. cap-to-substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PURPOSE:To enhance the thermal radiation effect, to avoid application of shearing stress to the electrically and mechanically connecting parts of semiconductor elements and a substrate, and to contrive to enhance reliability of the semiconductor device by a method wherein a cap having heat absorbing parts to come in contact with the backs of the semiconductor elements is fixed to the substrate by a fixing tool. CONSTITUTION:The heat absorbing parts 6a of the cap 6 having fins 7 and the backs of the elements 1 are made to come in contact mutually through heat transfer grease 8, one edge of the loop type body 9 of Al foil is welded to the circumferential edge of the cap 6, and a flange 9a at another edge is welded 5 to the metalized layer for sealing of the substrate 2. Loop type or belt type rubber 10 is compressed by a frame 11, and the prescribed pressure is applied between the cap main body 6 and the elements 11. According to this construction, heat transfer to the cap from the elements is favorable, and because the cap is not fixed to the elements, shearing stress according to sliding of the elements 1 is not applied to salient electrodes 4, and because the loop type body 9 also absorbs distortion between the cap 6 and the substrate 2, breakage of the substrate 2 and peeling off of the fixing part with the cap are not generated.

Description

【発明の詳細な説明】 この発明は、基板に形成された接続パターンに電極が電
気的、機械的に接続された半導体装置の改良に関するも
のである。近年、電算機等の電子機器の高密変実装の要
求か高°まるにつれ、個別ＩＣやＬＳＩを装置に実装す
る方法にかわって、セラミックやエポキシ樹脂等の基板
に複数個のｒｃ、ｒ、ｓｒ素子を塔載してなるモジュー
イレ化した半導体装置を用いる方法が広く用いられて米
ている。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement in a semiconductor device in which electrodes are electrically and mechanically connected to connection patterns formed on a substrate. In recent years, as the demand for high-density packaging of electronic devices such as computers has increased, the method of mounting multiple RC, R, SR on a substrate made of ceramic or epoxy resin has replaced the method of mounting individual ICs or LSIs on devices. A method using a modular semiconductor device in which elements are mounted is widely used.

この様に複数個のＬＳＩ素子が塔載されたモジュール（
以降マルチチップモジュール、　ＭＣＭ　ト称する）を
用いると、ＭＣＭ上に複数のＬＳＩ素子を塔載して相互
配線を行うため素子間の信号伝搬時間が短かく、又個別
Ｉ　Ｃ、ＬＳＩを使用するより狭いスペースに実装でき
るため、実装密度が上る等の効果を有するものである。In this way, a module (
When using a multi-chip module (hereinafter referred to as MCM), multiple LSI elements are mounted on the MCM and interconnected, so the signal propagation time between elements is shorter, and it is faster than using individual ICs and LSIs. Since it can be mounted in a narrow space, it has the effect of increasing the packaging density.

第１図は、従来のＭＣＭを示した断面図であり、図中（
１）け−主面（１ａ）に電極を有したＩＣ又はＬＳＩの
半導体素子（２）はセラミック等で形成された基板で、
その表面にけ導電性の接続パターン（図示せず）と、そ
の内部には各半導体素子（１）間の相互配線及び外部ピ
ン（３）への配線（図示せず）が形成され、表向周辺に
封止用メタライズ（図示せず）が設けられているもので
ある。（４）は上記半導体素子（１）の−主面に形成さ
れた電極に設けられた半田突起電極で、上記基板（２）
の表面に形成された接続パターンに接続され、上記半導
体素子（１）と基板（２）とを電気的かつ機械的に接続
するものである。（６）は上記基板（２）の周辺に設け
られ九封止用メタライズに半田等の接着材（５）で固着
され、内部を気密封ＩＦ。FIG. 1 is a sectional view showing a conventional MCM, and in the figure (
1) The IC or LSI semiconductor element (2) having electrodes on the main surface (1a) is a substrate made of ceramic or the like,
A conductive connection pattern (not shown) is formed on its surface, and interconnections between each semiconductor element (1) and wiring (not shown) to external pins (3) are formed inside it. A sealing metallization (not shown) is provided around the periphery. (4) is a solder protrusion electrode provided on the electrode formed on the negative main surface of the semiconductor element (1), and
The semiconductor element (1) and the substrate (2) are electrically and mechanically connected to the connection pattern formed on the surface of the semiconductor element (1). IF (6) is provided around the substrate (2) and is fixed to the nine sealing metallization with an adhesive (5) such as solder, thereby airtightly sealing the inside.

するキャップで上記半導体素子（１）及び基板（２）の
素子固着面の汚染、破損、腐蝕を防止するものである。The cap prevents contamination, damage, and corrosion of the semiconductor element (1) and the element fixing surfaces of the substrate (2).

ところがこの様に構成されたＭＣＭを用いることによっ
て、半導体装置としての実装密度が高く々る反面、単位
面積当りの発熱量が高くなり、ＭＣＭからの放熱の問題
を解決する必要が生じて米た。However, by using an MCM configured in this way, the packaging density as a semiconductor device becomes high, but at the same time, the amount of heat generated per unit area increases, and it becomes necessary to solve the problem of heat dissipation from the MCM. .

特に上記した様に半田突起電極（４）で基板（２）Ｋ接
続された半導体素子（１）からの発熱対策は極めて重要
な課題である。In particular, as mentioned above, countermeasures against heat generation from the semiconductor element (1) connected to the substrate (2) via the solder protrusion electrode (4) are extremely important issues.

このＭＣＭの放熱の課題解決のためには様々な方法が考
えられるが、最も一般的に考えられているものとして第
２図に示すようなものがある。このものはｌ＄１図のも
のに比して、半導体素子（１）の他よｆｆ１（１ａＬ！
ニーｔヤツ７’　（６）　＆　Ｏｌ１ｆｉ　Ｋヶゎ□。Various methods can be considered to solve the problem of heat dissipation in MCMs, but the most commonly considered method is the one shown in FIG. 2. This one is different from the one in Figure 1$1, except for the semiconductor element (1) and ff1(1aL!
Knee t guy 7' (6) & Ol1fi Kgawa□.

あいオゎ　　゛（例えばＳｎ、Ｉｎ等の軟金属や合金、
スポンジ状の金属、伝熱性樹脂、伝熱性グリース等の伝
熱体（８）を密着させて半導体素子（１）の他主面（１
ａ）からキャップへの伝熱係数を高めるとともに、キャ
ップ（６）の外表面に放１ｖＩｉ効果を高めるためのフ
ィン（７）を形成したものであり、第１図に示したもの
に比べ著るしい放熱効果が期待できるものである。Aiowa ゛ (for example, soft metals and alloys such as Sn and In,
A heat transfer material (8) such as a sponge-like metal, heat conductive resin, or heat conductive grease is attached to the other main surface (1) of the semiconductor element (1).
In addition to increasing the heat transfer coefficient from a) to the cap, fins (7) are formed on the outer surface of the cap (6) to enhance the radiation 1vIi effect, which is more significant than that shown in Figure 1. A new heat dissipation effect can be expected.

しかるに、この様に構成されたものにおいて、ＭＣＭの
動作、停止の際にキャップ（６）および基板（２）の温
度が変化するため、キャップ（６）と基板（２）との温
度差により、キャップ（６）と基板（２）の熱膨張係数
の違いに基づく熱歪が生じるものである。したがってこ
の歪のためキャップ（６）と基板（２）の相対的ずれが
生じ、ひいてはキャップ（６）と半導体素子（１）が熱
抵抗の高い金属等の伝熱体（８）により固着されている
と、半導体素子（１）を基板（２）に固着している半田
突起電極（４）に剪断応力が働らき半田突起電極（４）
の疲労破壊をきたし、その結果ＭＣＭの信頼性の低下を
きたすことになるものである。However, in a device configured in this way, the temperatures of the cap (6) and the substrate (2) change when the MCM is activated or stopped, so the temperature difference between the cap (6) and the substrate (2) causes Thermal strain occurs due to the difference in thermal expansion coefficient between the cap (6) and the substrate (2). Therefore, due to this distortion, a relative displacement occurs between the cap (6) and the substrate (2), and as a result, the cap (6) and the semiconductor element (1) are fixed by the heat transfer material (8) such as a metal with high thermal resistance. When the semiconductor element (1) is fixed to the substrate (2), shear stress is applied to the solder protrusion electrode (4), and the solder protrusion electrode (4)
This results in fatigue failure, resulting in a decrease in the reliability of the MCM.

一方、伝熱体（８）を金属ではなく伝熱グリースやスポ
ンジ状金属を用いると上記歪は該伝熱体（８）の変形に
より吸収され、突起電極（４）の疲労破壊は抑制できる
が、伝熱体（８）自体の熱抵抗ｔま金属等と比べ着るし
く低いため放熱効果に支障をきたすことになるものであ
る。On the other hand, if heat transfer grease or sponge-like metal is used instead of metal for the heat transfer body (8), the above-mentioned strain is absorbed by the deformation of the heat transfer body (8), and fatigue fracture of the protruding electrode (4) can be suppressed. However, since the thermal resistance of the heat transfer body (8) itself is uncomfortably low compared to metals, etc., the heat dissipation effect is hindered.

この発明は上記した点に鑑みてなされたものであり、基
板に半導体素子が電気的かつ機械的に接続されたものに
おいて、半導体素子の他主面傾接触する吸熱部を有した
キャップを基板に固定するとともに、このキャンプと基
板とを締め付は固定し、半導体素子の他主面に所定の押
圧力を与える固定具を設けて、半導体素子からの放熱効
果を高めるとともに１半導体素子と基板との電気的、機
械的接続部に剪断応力がかからないようにして信頼性の
向上を図ることを目的とするものである。This invention has been made in view of the above-mentioned points, and in a device in which a semiconductor element is electrically and mechanically connected to a substrate, a cap having a heat absorbing portion that contacts the other main surface of the semiconductor element at an angle is attached to the substrate. At the same time, a fixing device is provided that tightens and fixes the camp and the substrate and applies a predetermined pressing force to the other main surface of the semiconductor element, thereby increasing the heat dissipation effect from the semiconductor element and also tightening the camp and the substrate. The purpose of this is to improve reliability by preventing shear stress from being applied to the electrical and mechanical connections.

以下にこの発明の一実施例を第８図に基づいて説明する
と、（６）は−向に、半導体素子（１）の他主面に接触
され、半導体素子（１）からの熱を吸収する吸熱部（６
ａ）を有し、他面にひだやビン状の放熱フィン部（７）
を有したキャップの本体で、吸熱部（６ａ）と半導体素
子（１）他主面（１ａ）との間に熱抵抗を下げるだめの
伝熱グリース等の良伝熱伺（８）が充填されているもの
である。（９）は一端が上記キャップ（６）の端部周辺
に溶接あるいは半田にて接着され、他端に７ランジ（９
ａ）を有し、この７ランジ（９ａ）が基板（２）の封止
用メタライズに半田等の接着剤（５）あるいは溶接にて
接着されたアルミニウム（Ａｌ）、　銅（Ｃｕ）等の金
属箔からなる環状の取付体で、弾塑性を有し、上記本体
（６）とキャップを構成して半導体素子（１）を外気か
ら封止するものである。なお、この取付体（７）にｔよ
、さらにひだ状部を設ければ、基板（２）とキャップの
本体（６）との熱膨張係数の差異に基づく熱歪を、ひだ
状部を設けないものに対しさらに有効に吸収できるもの
である。αＯは上記キャップの本体（６）の周辺に設け
られた環状あるいは帯状のゴム等の弾性体、０υはこの
弾性体と基板（２）とを締め付は固定する押え枠で、弾
性体ＯＱとともに固定具を構成し、この押え枠０］）が
弾性体００を圧縮し、この弾性体αＱの反発力により、
キャップの本体（６）と半導体素子０１）との間に所定
の押圧力を与えるものである。An embodiment of the present invention will be described below based on FIG. 8. (6) is brought into contact with the other main surface of the semiconductor element (1) in the - direction, and absorbs heat from the semiconductor element (1). Heat absorption part (6
a), and has a pleated or bottle-shaped radiation fin part (7) on the other side.
The main body of the cap has a heat absorbing portion (6a) and the other main surface (1a) of the semiconductor element (1), and is filled with a good heat transfer material (8) such as heat transfer grease to reduce thermal resistance. It is something that (9) has one end welded or soldered around the end of the cap (6), and the other end has 7 langes (9).
a), and these seven rungs (9a) are made of metal such as aluminum (Al) or copper (Cu) bonded to the sealing metallization of the substrate (2) with an adhesive (5) such as solder or by welding. It is an annular mounting body made of foil, has elastic-plastic properties, and forms a cap with the main body (6) to seal the semiconductor element (1) from the outside air. In addition, if this mounting body (7) is further provided with a pleated portion, the thermal distortion due to the difference in the coefficient of thermal expansion between the substrate (2) and the main body (6) of the cap can be reduced by providing the pleated portion. It can be absorbed more effectively than those without. αO is an annular or band-shaped elastic body such as rubber provided around the main body (6) of the cap, and 0υ is a holding frame that tightens and fixes this elastic body and the substrate (2), together with the elastic body OQ. This presser frame 0]), which constitutes a fixture, compresses the elastic body 00, and due to the repulsive force of this elastic body αQ,
A predetermined pressing force is applied between the main body (6) of the cap and the semiconductor element 01).

この様に構成されたものにおいて、半導体素子（１）と
キャップの本体（６）とは弾性体０００弾性により所定
の加圧力で接触しているため、半導体素子（１）からキ
ャップ（６）への伝熱性は良好であり、かつ、キャップ
の本体（６）は半導体素子（１）の他主面（１ａ）に固
着していないため、キャップと基板（２）との間の熱膨
張係数の違いによる熱歪によりキャップに生じた伸び縮
みはキャップの本体（６）と半導体素子（１）の他主面
（１ａ）間のすべりによって半導体素子（１）に応力は
かからず、突起電極（４）には剪断応力が加わりに＜＜
、それによる破壊もなくなるものである。さらに、キャ
ップの本体（６）と基板（２）間の歪は取付体（９）で
も吸収できるため、キャップを基板（２）に固着した時
起こる基板（２）の割れ及びキャップと基板（２）との
固着部分の剥離等の恐れもなくなるものである。In this structure, the semiconductor element (1) and the main body (6) of the cap are in contact with each other with a predetermined pressing force due to the elasticity of the elastic body 000, so that the semiconductor element (1) is connected to the cap (6). has good heat conductivity, and since the main body (6) of the cap is not fixed to the other main surface (1a) of the semiconductor element (1), the coefficient of thermal expansion between the cap and the substrate (2) is low. The expansion and contraction that occurs in the cap due to thermal strain caused by the difference does not apply stress to the semiconductor element (1) due to the slip between the main body (6) of the cap and the other main surface (1a) of the semiconductor element (1), and the protruding electrode ( 4) Shear stress is added to <<
, and the destruction caused by it will also be eliminated. Furthermore, since the strain between the main body (6) of the cap and the substrate (2) can be absorbed by the mounting body (9), cracks in the substrate (2) that occur when the cap is fixed to the substrate (2) and between the cap and the substrate (2) can be absorbed. ), there is no fear of peeling off of the adhered parts.

第４図はこの発明の他の実施例を示すものであり、第８
図に示したものの弾性体００と押え枠０ηとで構成され
た固定具を、一端がキャップの本体（６）に固定された
第１の押え枠（ｌｌａ）と、一端が基板（２）に固定さ
れた第２の押え枠（ｌｌｂ）と、これら第１および第２
の押え枠（ｈａ）（ｔｔｂ）の他端にそれぞれ固定され
た弾性体αＱとで構成したことを特徴とし、第１の押え
枠（ｔｔａ）と第２の押え枠（ｔｘｂ）により弾性体α
Ｑを圧縮し、この弾性体αＱの反発力によりキャップの
本体（６）と半導体素子αηとの間に所定の押圧力を与
えるものである。FIG. 4 shows another embodiment of the present invention, and FIG.
A fixture composed of an elastic body 00 and a presser frame 0η as shown in the figure is attached to a first presser frame (lla) whose one end is fixed to the main body (6) of the cap, and whose other end is fixed to the substrate (2). A fixed second presser frame (llb) and these first and second
The first presser frame (tta) and the second presser frame (txb) allow the elastic body α to be
Q is compressed, and a predetermined pressing force is applied between the main body (6) of the cap and the semiconductor element αη by the repulsive force of the elastic body αQ.

この実施例のものにおいても、上記第８図に示す実施例
のものと同様な効果を奏するほか、弾性体ＯＱをキャッ
プの本体（６）と基板（１）を加圧する方向にのみ弾性
を有し、他の方向へは弾性を有しないものとすれば、外
から外力が加わってもキャンプの本体（６）の基板（２
）からのずれを防止できるものである。This embodiment also has the same effect as the embodiment shown in FIG. However, assuming that it has no elasticity in other directions, even if an external force is applied from the outside, the base plate (2) of the main body (6) of the camp
) can be prevented from shifting.

なお、上記実施例のものにおいて、放熱フィン（７）の
形状、キャンプの材質、キャップと半導体素子（１）間
の伝熱材（８）の材質、厚さ、及び取付体（９）の材質
、厚さ、及びキャップや基板（２）への固定方法、弾性
体αＱの材質、形状、押え枠（１１）（１１８０１１ｂ
）の形状材質等又押え枠（１１）（１１ａ）（１１ｂ）
の取り付は方法等は何ら図示のものに制限をうけるもの
でない事は勿論、半導体素子（１）、基板（２）の形状
、材質、突起電極（４）の形状等についても図示のもの
に何ら制限をうけるものでないものである。In addition, in the above embodiment, the shape of the radiation fin (7), the material of the camp, the material and thickness of the heat transfer material (8) between the cap and the semiconductor element (1), and the material of the mounting body (9) , thickness, method of fixing to the cap or substrate (2), material and shape of the elastic body αQ, presser frame (11) (118011b
) Shape and material, etc. Also, presser frame (11) (11a) (11b)
Of course, the mounting method etc. is not limited to that shown in the figure in any way, and the shape and material of the semiconductor element (1), the substrate (2), the shape of the protruding electrode (4), etc. are also as shown in the figure. It is not subject to any restrictions.

この発明は以上に述べたように、基板に半導体素子が電
気的かつ機械的に接続されたものにおいて、半導体素子
の他主面に接触する吸熱部を有し、その端部が基板に固
定されるキャップおよびこのキャップと基板とを締め付
は固定し、上記半導体素子に所定の押圧力を与える固定
具を設けたので、半導体素子の他主面とキャップの吸熱
部が所定の押圧力で接しているため、半導体素子からの
放熱効果を高めることができ、しかもキャップと基板と
の熱膨張係数の差異に基づく熱歪を、半導体素子とキャ
ンプとのずれにより吸収でき、半導体素子と基板との接
続部にかかる剪断応力を抑制できるため信頼性の向上が
図れるという効果を有する　　　　゛ものである。As described above, the present invention has a heat absorption part that contacts the other main surface of the semiconductor element in a substrate in which a semiconductor element is electrically and mechanically connected, and the end part of which is fixed to the substrate. Since the cap and the substrate are tightened and fixed, and a fixture is provided that applies a predetermined pressing force to the semiconductor element, the other main surface of the semiconductor element and the heat absorbing part of the cap come into contact with the predetermined pressing force. As a result, the heat dissipation effect from the semiconductor element can be enhanced, and thermal strain caused by the difference in thermal expansion coefficient between the cap and the substrate can be absorbed by the misalignment between the semiconductor element and the camp, and the thermal strain between the semiconductor element and the substrate can be absorbed. This has the effect of improving reliability because the shear stress applied to the connection can be suppressed.

【図面の簡単な説明】[Brief explanation of drawings]

第１図および第２図はそれぞれ従来の半導体装置を示す
断面図、第８図はこの発明の一実施例を示す断面図、第
４図はこの発明の他の実施例を示す断面図である。 図において（１）は半導体素子、（２）は基板、（６）
はキャップ、（６ａ）は吸熱部、（７）は放熱フィン、
（８）は良伝熱材、（９）は取付体、α１は弾性体、Ｑ
ｌ）は押え枠、（ｌｌａ）は第１の押え枠、（１１ｂ）
ｔＩ士第２の押え枠である。 なお、各図中同一符号は同一または相当部分を示す。 代理人　葛野信− （ｌす 第１図 第２図 第３図 手続補正書（自発） 第４図 １、事件の表示　　　　特願昭５７−１１０８０２号２
、発明の名称　　　半導体装置 ３、補正をする者 事件との関係　　　特許出願人 住　所　　　　　東京都千代田区丸の内二丁目２番３号
名　称（６０１）　　　三菱電機株式会社代表者片山仁
八部 ４、代理人 住　所　　　　　東京都千代田区丸の内二丁目２番３号
三菱電機株式会社内 ５、補正の対象 明細書の発明の詳細な説明の欄。 ６、Ｍ正の内容 （１）明細書中梁５頁第１８行に「熱抵抗の高い」とあ
るのを［熱抵抗の低い−１と訂正する。 （２）同第６自−第２行に「低いため」とあるのを１商
いため」と訂正する。 （３）同第７臼第９行に［材体（７）　ｌとあるのを「
材体（９）」と訂正する。 以　　上 ２４９−1 and 2 are cross-sectional views showing a conventional semiconductor device, FIG. 8 is a cross-sectional view showing one embodiment of the present invention, and FIG. 4 is a cross-sectional view showing another embodiment of the present invention. . In the figure, (1) is the semiconductor element, (2) is the substrate, and (6)
is the cap, (6a) is the heat absorption part, (7) is the heat radiation fin,
(8) is a good heat transfer material, (9) is a mounting body, α1 is an elastic body, Q
l) is the presser frame, (lla) is the first presser frame, (11b)
This is the second presser frame. Note that the same reference numerals in each figure indicate the same or corresponding parts. Agent Makoto Kuzuno - (I Figure 1 Figure 2 Figure 3 Procedural amendment (spontaneous) Figure 4 1, Indication of the case Patent application No. 110802/1982
, Title of the invention Semiconductor device 3, Relationship to the person making the amendment Patent applicant address 2-2-3 Marunouchi, Chiyoda-ku, Tokyo Name (601) Mitsubishi Electric Corporation Representative Hitachi Katayama 4, Agent Address: 5, Mitsubishi Electric Corporation, 2-2-3 Marunouchi, Chiyoda-ku, Tokyo, Japan Detailed description of the invention in the specification to be amended. 6.M Correct Contents (1) In the specification, on page 5, line 18, "high thermal resistance" is corrected to "low thermal resistance -1." (2) In the 6th line of the same book, the 2nd line should be corrected to read ``Because it is low'' as ``Because it is 1 quotient.'' (3) In the 9th line of the 7th mill, replace [Material body (7) l with]
Corrected to ``Material body (9)''. Above 249-

Claims (6)

【特許請求の範囲】[Claims] （１）−面に導電材からなる接続パターンが形成された
基板、−主面に電極を有し、この電極が上記基板の接続
パターンに電気的かつ機械的に接続された半導体素子、
この半導体素子の他主面に接触する吸熱部を有し、その
端部が上記基板に固定されたキャップ、このキャップと
基板とを締め付は固定し、上記半導体素子に所定の押圧
力を与える固定具を備えた半導体装置。(1) - A substrate on which a connection pattern made of a conductive material is formed; - A semiconductor element having an electrode on its main surface, which electrode is electrically and mechanically connected to the connection pattern on the substrate;
A cap having a heat absorbing part that contacts the other main surface of the semiconductor element and having an end fixed to the substrate; the cap and the substrate are tightened and fixed to apply a predetermined pressing force to the semiconductor element; Semiconductor equipment with fixtures. （２）キャップを、吸熱部を有する本体と、この本体と
基体との間に固定され、弾塑性を有する取付体とにより
構成したことを特徴とする特許請求の範囲第１項記載の
半導体装置。(2) The semiconductor device according to claim 1, wherein the cap is constituted by a main body having a heat absorbing portion and an elastic-plastic mounting body fixed between the main body and the base body. . （３）キャンプを、放熱フィンを具備したものとしたこ
とを特徴とする特許請求の範囲第１項又は第２項記載の
半導体装置。(3) A semiconductor device according to claim 1 or 2, characterized in that the camp is equipped with a radiation fin. （４）キャップの吸熱部の半導体素子他主面に接触する
部位を良伝熱材としたことを特徴とする特許請求の範囲
第１項ないし第８項のいずれかに記載の半導体装置。(4) The semiconductor device according to any one of claims 1 to 8, wherein a portion of the heat absorbing portion of the cap that contacts the semiconductor element and other main surfaces is made of a good heat conductive material. （５）固定具を、キャンプに固定された弾性体と、この
弾性体と基板上を締め付は固定する押え枠とで構成した
ことを特徴とする特＊Ｍ末の範囲第１項ないし第４項の
いずれかに記載の半導体装置。(5) Items 1 to 1 of the range at the end of the special feature, characterized in that the fixing device is composed of an elastic body fixed to the camp and a presser frame that tightens and fixes the elastic body and the substrate. 4. The semiconductor device according to any one of Item 4. （６）固定具を、一端がキャップに固定される第１の押
え枠と、一端が基板に固定される第２の押え枠と、これ
ら第１および第２の押え枠の他端にそれぞれ固定された
弾性体とで構成したことを特徴とする特許請求の範囲第
１項ないし第４項のいずれかに記載の半導体装置。(6) Fixing fixtures are fixed to the first presser frame whose one end is fixed to the cap, the second presser frame whose one end is fixed to the board, and the other ends of these first and second presser frames, respectively. A semiconductor device according to any one of claims 1 to 4, characterized in that the semiconductor device is constructed of an elastic body made of a rubber material.
JP11030282A 1982-06-24 1982-06-24 Semiconductor device Pending JPS58225656A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11030282A JPS58225656A (en) 1982-06-24 1982-06-24 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11030282A JPS58225656A (en) 1982-06-24 1982-06-24 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS58225656A true JPS58225656A (en) 1983-12-27

Family

ID=14532249

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11030282A Pending JPS58225656A (en) 1982-06-24 1982-06-24 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS58225656A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6221251A (en) * 1985-07-22 1987-01-29 Nec Corp Multilayer ceramic package
JPS6373650A (en) * 1986-09-17 1988-04-04 Fujitsu Ltd Semiconductor device
US4855869A (en) * 1986-09-19 1989-08-08 Nec Corporation Chip carrier
US5132776A (en) * 1988-10-28 1992-07-21 Sumitomo Electric Industries, Ltd. Member for carrying a semiconductor device
EP0883175A2 (en) * 1997-06-03 1998-12-09 Lsi Logic Corporation High performance heat spreader for flip chip packages
JP2000252663A (en) * 1999-03-01 2000-09-14 Sharp Corp Electronic circuit board device and electric equipment using the same

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6221251A (en) * 1985-07-22 1987-01-29 Nec Corp Multilayer ceramic package
JPS6373650A (en) * 1986-09-17 1988-04-04 Fujitsu Ltd Semiconductor device
US4855869A (en) * 1986-09-19 1989-08-08 Nec Corporation Chip carrier
US5132776A (en) * 1988-10-28 1992-07-21 Sumitomo Electric Industries, Ltd. Member for carrying a semiconductor device
EP0883175A2 (en) * 1997-06-03 1998-12-09 Lsi Logic Corporation High performance heat spreader for flip chip packages
EP0883175A3 (en) * 1997-06-03 1999-06-09 Lsi Logic Corporation High performance heat spreader for flip chip packages
JP2000252663A (en) * 1999-03-01 2000-09-14 Sharp Corp Electronic circuit board device and electric equipment using the same

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