JP2570605B2 - Semiconductor device - Google Patents

Semiconductor device

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Publication number
JP2570605B2
JP2570605B2 JP30699993A JP30699993A JP2570605B2 JP 2570605 B2 JP2570605 B2 JP 2570605B2 JP 30699993 A JP30699993 A JP 30699993A JP 30699993 A JP30699993 A JP 30699993A JP 2570605 B2 JP2570605 B2 JP 2570605B2
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cap
heat
semiconductor element
semiconductor device
metal foil
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JPH07142647A (en
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信明 高橋
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日本電気株式会社
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    • HELECTRICITY
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    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • H01L23/3675Cooling facilitated by shape of device characterised by the shape of the housing
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    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433Auxiliary members in containers characterised by their shape, e.g. pistons
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    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0655Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
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    • H01L2224/10Bump connectors; Manufacturing methods related thereto
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    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/732Location after the connecting process
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    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
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    • H01L2924/151Die mounting substrate
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    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16152Cap comprising a cavity for hosting the device, e.g. U-shaped cap
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    • H01L2924/1615Shape
    • H01L2924/16195Flat cap [not enclosing an internal cavity]

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【産業上の利用分野】本発明は半導体装置の実装構造に関し、特に回路基板に搭載した半導体素子の放熱性を改善した半導体装置に関する。 The present invention relates to an assembly structure of a semiconductor device, a semiconductor device which has particular improved heat dissipation of the semiconductor elements mounted on the circuit board.

【0002】 [0002]

【従来の技術】従来の半導体装置、特にマルチチップモジュールでは、図6のように、回路基板23上に複数個の半導体素子21をバンプ22を用いたフリップチップ接続法等により搭載し、これをパッケージ24内に内装しキャップ27で封止している。 Conventional semiconductor devices, especially in a multi-chip module, as shown in FIG. 6, is mounted by flip-chip connection method in which a plurality of semiconductor elements 21 on the circuit board 23 with bumps 22, it is sealed decorated capped 27 in the package 24. また、回路基板23はパッケージ24に設けたリード25に金属ワイヤ26で電気接続される。 Further, the circuit board 23 are electrically connected by the metal wire 26 to the lead 25 which is provided in the package 24. そして、この半導体素子21の放熱性を高めるために、半導体素子21の裏面にキャップ27 Then, the cap 27 in order to increase the heat dissipation of the semiconductor device 21, the back surface of the semiconductor element 21
を直接或いは間接的に接続し、半導体素子21で発生した熱をキャップ27に設けたヒートシンク28を介して放熱させる構成が取られている。 Directly or indirectly connected, configured to dissipate through the heat sink 28 provided the heat generated in the semiconductor element 21 in the cap 27 is taken. しかしながら、このような構造では、半導体素子21とキャップ27やヒートシンク28との熱膨張係数の相違により、熱履歴を受けたときに半導体素子21とキャップ27やヒートシンク28との間に熱応力が生じ、半導体素子21の接続部2 However, in this structure, the difference in thermal expansion coefficient between the semiconductor element 21 and the cap 27 and the heat sink 28, thermal stress between the semiconductor element 21 and the cap 27 and the heat sink 28 when subjected to heat history occurs the connection portion 2 of the semiconductor element 21
2の接続不良が生じたり、半導体素子21自体に割れが発生する等の問題が生じる。 2 connection or caused poor, problems such as cracks are generated in the semiconductor element 21 itself occur.

【0003】このため、従来では熱応力を緩和する構造が提案されており、例えば、特開昭63−287038 [0003] Therefore, in the conventional has been proposed a structure to reduce thermal stress, for example, JP 63-287038
号公報に記載されているものを図7に示す。 7 those described in JP. この構造は、多層配線基板33上にLSIチップ31を半田32 This structure, the LSI chip 31 solder on the multilayer wiring board 33 32
により搭載し、これを熱伝導性の良い銅等で形成したキャップ37内に内装し、かつその上でLSIチップ31 Equipped with, which was furnished in a cap 37 formed with a good thermal conductivity such as copper, and the LSI chip 31 thereon
の裏面に、高熱伝導板34を接着し、かつこの高熱伝導板34とキャップ37とを金属繊維からなる柔軟性を有する熱伝導体35を用いて接続した構成がとられている。 On the back of, and bonded to the high thermal conductivity plate 34, and is configured to the this high heat conduction plate 34 and the cap 37 is connected with the thermal conductor 35 having flexibility made of metal fibers have been taken. 36は多層配線基板とキャップとを接続する金属ベローズである。 36 is a metal bellows for connecting the multilayer wiring board and the cap.

【0004】この構造では、LSIチップ31とキャップ37とを高熱伝導板34及び金属繊維からなる熱伝導体35で接合していることにより、LSIチップ31で発生した熱を高熱伝導板34及び熱伝導体35を介してキャップ37に伝達させ、このキャップ37から放熱させることで高い放熱性を得ている。 [0004] In this structure, by which bonding the LSI chip 31 and the cap 37 of a heat conductive member 35 made of highly heat-conductive plate 34 and the metal fibers, thermal high thermal conductive plate 34 and the heat generated in the LSI chip 31 It is transmitted to the cap 37 via a conductor 35, to obtain a high heat dissipation by dissipating from the cap 37. また、熱伝導体35 In addition, the heat conductor 35
を構成する金属繊維は柔軟性を有しているので、LSI Since the metal fibers constituting has flexibility, LSI
チップ31とキャップ37との間に熱膨張率の違いにより生じる熱応力を吸収し、或いは緩和し、LSIチップ31の接続部32の不良発生やLSIチップ31の割れを防止することができる効果を得ることができる。 Absorbs the thermal stress caused by the difference in thermal expansion coefficient between the chip 31 and the cap 37, or alleviating the effect of preventing the cracking of the failure and the LSI chip 31 of the connecting portion 32 of the LSI chip 31 it is possible to obtain. なお、金属ベローズ36は、金属薄板を部分的に積層接合して組立てたものであり、半田接合時に生じるキャップ37と配線基板33の相対的な変位に対応して、両者間での応力を吸収し、或いは緩和することが可能である。 The metal bellows 36, which has assembled the metal sheet by joining partial stack, in response to relative displacement of the cap 37 and the wiring board 33 caused during solder joint, absorbing the stress between them and, or it can be relaxed.

【0005】 [0005]

【発明が解決しようとする課題】しかしながら、この従来の半導体装置では、LSIチップ31とキャップ37 [SUMMARY OF THE INVENTION However, in this conventional semiconductor device, LSI chip 31 and the cap 37
の間に設けている金属繊維からなる熱伝導体35は、高い柔軟性を得るためには金属繊維に細いものを用い、かつ各繊維間の間隔を広くとらなければならないので、結果的に熱伝導体としての有効面積が小さくなり、熱抵抗が高くなって放熱性の効果が小さなものとなる。 The thermal conductor 35 made of metal fibers which are provided between, used as fine in metal fibers in order to obtain a high flexibility, and so must be taken wide spacing between the fibers, resulting in heat the effective area of ​​the conductor is reduced, heat dissipation effect heat resistance is high is small. 逆に、 vice versa,
高い放熱性を得るために、金属繊維に太いものを用い、 To obtain a high heat radiation property, used as thick on the metal fibers,
或いは繊維間の間隔を狭くして熱抵抗の低減すると、熱伝導体としての剛性が大きくなり、結果的に高い柔軟性を得るのは困難になり、LSIチップに生じる熱応力の緩和効果が低下される。 Or if the spacing between fibers narrows to reduce the thermal resistance, rigidity of the thermal conductor is increased, resulting in higher obtain flexibility becomes difficult, decrease relaxation effect of thermal stress generated in the LSI chip It is. また、金属繊維間はある間隔を持たせなければならず、しかも長さを揃える必要があるので、熱伝導体の作製プロセスが複雑になり、製造コストが高くなるという問題もある。 Further, it is necessary to have a spacing that is between the metal fibers, and since it is necessary to align the length, the manufacturing process of the thermal conductor is complicated, there is also a problem that the manufacturing cost is increased. 本発明の目的は、半導体素子の放熱性を改善するとともに、半導体素子に対する熱応力を緩和することを可能にした半導体装置を提供することにある。 An object of the present invention is to improve the heat dissipation of the semiconductor device is to provide a semiconductor device which makes it possible to alleviate the thermal stress on the semiconductor element.

【0006】 [0006]

【課題を解決するための手段】本発明の半導体装置は、 The semiconductor device of the present invention According to an aspect of the
パッケージ内に内装された半導体素子と、このパッケージに設けられたキャップあるいはヒートシンクとを柔軟な形状に加工された伝熱性金属フォイルにより接続した構成とする。 A semiconductor element furnished in the package, and was connected configured by heat transfer metal foil and a cap or a heat sink provided processed into a flexible shape in this package. ここで、伝熱性金属フォイルは、高熱伝導性の薄い金属板を波形状に加工し、その山部を半導体素子またはキャップあるいはヒートシンクの一方に接続し、谷部を他方に接続する。 Here, thermally conductive metal foil, by processing a high thermal conductivity thin metal plate in the waveform shape, and connecting the crests on one of the semiconductor element or cap, or a heat sink, connects the valley to the other. また、伝熱性金属フォイルは、波形状の山部または谷部の幅方向の一部には、波の連続方向に沿って切溝を形成することが好ましい。 Further, heat transfer metal foil, a part of the corrugated ridges or width direction of the valleys, it is preferable to form a kerf along the continuing direction of the wave.

【0007】 [0007]

【作用】本発明によれば、伝熱性金属フォイルは、高い伝熱性と柔軟性を有しているため、半導体素子で発生した熱を効率良く放熱板に伝達して放熱するとともに、半導体素子とキャップあるいはヒートシンクとの間に生じる熱応力をその柔軟性により緩和して半導体素子における接続不良や破損等を防止する。 According to the present invention, heat transfer metal foil, since it has a high heat conductivity and flexibility, as well as heat radiation to transfer heat generated in the semiconductor element efficiently radiating plate, a semiconductor element the thermal stress generated between the cap or sink to relax by its flexibility to prevent connection failure or damage of the semiconductor element. 特に、伝熱性金属フォイルを、波形状とし、山部または谷部を半導体素子と In particular, the heat transfer metal foil, and wavy, the semiconductor element crest or valley key
ャップあるいはヒートシンクに接続することで、 山と山 By connecting to the cap or heat sink, mountains and mountain
あるいは谷と谷のピッチを狭くすれば広い接触面積が得 Alternatively large contact area when narrowing the pitch of the troughs is obtained
られ 、伝熱効果を高めることが可能となり、かつ波形状により柔軟性を得ることができる。 Is, it is possible to increase the heat transfer effect, it is possible to obtain a flexibility corrugated. 更に、波形状の伝熱性金属フォイルに切溝を設けることで、縦横方向の柔軟性を向上することが可能となる。 Further, by providing the kerf to corrugated heat transfer metal foil, it is possible to improve the flexibility of the vertical and horizontal directions.

【0008】 [0008]

【実施例】次に、本発明について図面を参照して説明する。 EXAMPLES Next, will be described with reference to the drawings the present invention. 図1は本発明の実施例1の半導体装置の断面図である。 Figure 1 is a cross-sectional view of a semiconductor device of Example 1 of the present invention. 半導体素子1はシリコン等の半導体基板にトランジスタ等の能動素子や、抵抗等の受動素子を形成した半導体チップとして構成されており、その表面に設けた電極パッドに形成したバンプ2により回路基板3にフリップチップ接続法で搭載されている。 The semiconductor element 1 and active elements such as transistors on a semiconductor substrate such as silicon, is constructed as a semiconductor chip having a passive element such as a resistor, the circuit board 3 by bump 2 formed on the electrode pad provided on the surface thereof It is mounted in a flip-chip connection method. バンプ2は、例えば、 Bump 2 is, for example,
Pb/Sn =95/5wt. Pb / Sn = 95 / 5wt. %半田で構成される。 % Consisting of solder. また、回路基板3は半導体素子1を構成する材料に近い熱膨張率を有する材料で構成されている。 Further, the circuit board 3 is formed of a material having a thermal expansion coefficient close to the material constituting the semiconductor device 1. そして、この半導体素子1を搭載した回路基板3はパッケージ4内に内装され、パッケージ4に支持されたリード5に電気接続される。 Then, the circuit board 3 on which the semiconductor element 1 is furnished in the package 4, is electrically connected to the lead 5 which is supported by the package 4. この電気接続に際しては、ここではTAB(テープ・オートメイティド・ボンディング)6を用いており、これにより回路基板3はパッケージ4内においてT T In this electrical connection, here uses a TAB (tape automated bonding) 6, thereby the circuit board 3 in the package 4
AB6により懸架された状態で支持される。 It is supported in a state of being suspended by AB6. そして、前記パッケージ4の上部の開口部にコバール等の金属で形成されたキャップ7を半田( Pb/Sn =37/63w Then, a cap 7 formed of a metal such as Kovar to the opening of the top of the package 4 solder (Pb / Sn = 37 / 63w
t. t. %)により接続し、内部を封止する。 %) To connect to seal the interior. また、キャップ7の外側面にはAl等からなるヒートシンク8を接続している。 Further, on the outer surface of the cap 7 is connected to the heat sink 8 made of Al or the like.

【0009】一方、前記半導体素子1とキャップ7との間には、AlおよびAl系合金、またはCuおよびCu Meanwhile, the between the semiconductor element 1 and the cap 7, Al and Al alloy or Cu and Cu,
系合金で形成された薄板を波形状に加工した伝熱性金属フォイル9を接着する。 Bonding the thermally conductive metal foil 9 processing the thin sheet formed of a system alloy corrugated. 図2は前記伝熱性金属フォイル9を示す図であり、図2(a)は平面図、図2(b)はそのA部の拡大斜視図である。 Figure 2 is a diagram showing the thermally conductive metal foil 9, FIG. 2 (a) is a plan view, FIG. 2 (b) is an enlarged perspective view of the A portion. 伝熱性金属フォイル9は前記した素材の金属薄板をプレス加工法等によりその Heat transfer metal foil 9 an the metal sheet of the material mentioned above by pressing method or the like
方の辺方向に沿って波が進行される波形状に形成する。 Square along the side direction of forming the wave shape wave is traveling.
また、 他方の辺方向の複数箇所(ここでは2箇所)には、山の頂部を他方の辺方向に分離する切溝9aを一方 Further, the plurality of locations of the other side direction (two positions in this case), one cut grooves 9a which separates the top of the mountain on the other side direction
辺方向に向けて延長形成している。 It is extendedly formed toward a side direction. 例えば、金属フォイル9の厚さは20〜100μm程度、波形状に加工後の山と山、および谷と谷のピッチは0.5〜2mm程度、高さは0.5〜2mm程度である。 For example, the thickness of the metal foil 9 is about 20 to 100 [mu] m, crests after processed into a wave shape, and valleys and the pitch of the valleys is about 0.5 to 2 mm, a height of about 0.5 to 2 mm.

【0010】そして、谷の部分を半導体素子1の裏面に半田10で接続し、山の部分をキャップの内面に半田1 [0010] Then, connect the portion of the valley solder 10 on the back surface of the semiconductor element 1, the solder portions of the mountain on the inner surface of the cap 1
0で接続している。 It is connected by 0. この場合、金属フォイル9の材料としてAl等のPb/Sn半田で直接接着することが困難な材料を用いる場合は、接着する山と谷の部分、あるいは全面にCu等のPb/Sn半田と直接接着可能な金属をクラッド法等を用いて形成しておけば良い。 In this case, when using a hard material to be bonded directly with Pb / Sn solder, such as Al, as a material of the metal foil 9, peaks and valley portions of the bonding or on the entire surface Pb / Sn solder and direct such as Cu, the bondable metal it is sufficient to form with the cladding method. また、波形状の山の部分には、必ずしも角度が付いている必要がなく、丸みが付いていても良い。 In addition, the portion of the waveform shape of the mountain, always there is no need to be angled, may be rounded. また、この実施例では、一つの伝熱性金属フォイル9が回路基板3に搭載されている複数個の半導体素子1の全てにわたって形成されているが、それぞれ独立した複数個の伝熱性フォイルを各半導体素子に接続してもよい。 Further, in this embodiment, one of the thermally conductive metal foil 9 is formed over all of a plurality of semiconductor elements 1 mounted on the circuit board 3, the semiconductor the independent plurality of heat transfer foil it may be connected to the device.

【0011】この構成によれば、伝熱性金属フォイル9 According to this structure, heat transfer metal foil 9
は波形状に加工されており、かつその波形状方向に切溝9aが形成されているため、その他方の辺方向及び一方 Since being processed into a wave shape, and cut grooves 9a on the waveform shape direction are formed, side direction and one of the other
の辺方向の柔軟性に優れている。 It has excellent side direction of flexibility. そのため、熱履歴によって生じるパッケージキャップ7と半導体素子1との間の熱膨張差による熱応力を伝熱性金属フォイル9によって吸収し、緩和することができる。 Therefore, it is possible to heat stress due to difference in thermal expansion between the package cap 7 and the semiconductor element 1 caused by the thermal history and absorbed by thermally conductive metal foil 9 relaxes. その結果、半導体素子1と回路基板3の熱膨張差は影響なくなり、バンプ2 As a result, the thermal expansion difference between the semiconductor element 1 and the circuit board 3 is lost effects, bump 2
における接続不良の発生を回避することができる。 It is possible to avoid the occurrence of defective connection in. また、これと同時に伝熱性金属フォイル9は熱伝導率の高い金属材料で形成されており、かつ半導体素子1やキャップ7とは波形状の谷部や山部の広い面積で接続されているため、全体の熱抵抗が低くなり、半導体素子1で発生した熱を効率良くキャップ7に伝熱させ、更にヒートシンク8から放熱させることができ、半導体装置としての放熱性を向上することができる。 At the same time for heat transfer metal foil 9 which are connected by a large area of ​​the corrugated troughs and crests and high thermal conductivity is made of metal material, and the semiconductor element 1 and the cap 7 , the lower the overall thermal resistance, the heat generated in the semiconductor element 1 is transferred to the efficient cap 7, it is possible to further heat dissipation from the heat sink 8, it is possible to improve the heat dissipation of the semiconductor device.

【0012】一例として10mm□の1チップの放熱における熱抵抗を示す。 [0012] A thermal resistance heat radiation 10 mm □ 1 chip as an example. 図3は熱抵抗計算に使用したモデル図であり、図3(a)は図7に示した構造の場合、図3(b)は本発明の実施例1の構造の場合をそれぞれ示す。 Figure 3 is a model diagram used in thermal resistance calculation, FIG. 3 (a) when the structure shown in FIG. 7, FIG. 3 (b) shows the case of the structure of the first embodiment of the present invention, respectively. 簡単のため、接着剤等は省略して考える。 For the sake of simplicity, such as an adhesive think omitted. 本発明の場合、伝熱性金属フォイル9の材料をCu(熱伝導率3 For the present invention, the material of the thermally conductive metal foil 9 Cu (thermal conductivity 3
95 W/m・K )とし、フォイル厚を50μm、加工後の波形状ピッチを1mm、高さを1mmとすると、熱抵抗は0.28 K/Wが得られる。 And 95 W / m · K), the foil thickness 50 [mu] m, 1mm waveform shaped pitch after processing, when a 1mm height, thermal resistance is obtained 0.28 K / W. この熱抵抗と同等の熱抵抗を従来技術で得る場合、熱伝導体35の金属繊維の材料をCuとし、太さを50μmとすると、10mm□ To obtain the same thermal resistance and the thermal resistance in the prior art, the material of the metal fibers of the thermal conductor 35 and Cu, when the thickness and 50 [mu] m, 10 mm □
の領域内に約150μmの狭いピッチで4600本もの繊維を設けなければならず、柔軟性が低下されて熱応力の緩和効果が低下されるとともに、その作製が非常に困難になり、かつ高コストになってしまう。 Must be provided also for the fibers 4600 present at the narrow pitch of about 150μm in the area, together with the flexibility is reduced relaxation effect of thermal stress is reduced, the manufacturing is very difficult and costly Become.

【0013】図4は、本発明の実施例2の断面図であり、実施例1と同一部分には同一符号を付してある。 [0013] Figure 4 is a cross-sectional view of a second embodiment of the present invention, the same components as in Example 1 are denoted by the same reference numerals. この実施例では、パッケージ4の開口部を封止するキャップを省略しており、開口部にはヒートシンク8を直接接続して封止を行っている。 In this embodiment, are omitted cap for sealing the opening of the package 4, the opening is carried out sealing by connecting the heat sink 8 directly. そして、半導体素子1の裏面とヒートシンク8の内面とをAlおよびAl系合金、またはCuおよびCu系合金からなる伝熱性金属フォイル9で接続している。 Then, connected in thermally conductive metal foil 9 made a back and the inner surface of the heat sink 8 of the semiconductor element 1 from Al and Al alloy or Cu and Cu alloy. この構造によれば、前記実施例1と同様に放熱効果と熱応力緩和効果の両方の効果が得られるのは勿論であるが、ここではキャップが省略されていることにより半導体素子1とヒートシンク8間の熱抵抗を更に低下することが可能であり、放熱性をより向上することができる。 According to this structure, wherein at the same manner as in Example 1, the effect of both the heat radiation effect and the thermal stress relaxation effect can be obtained as a matter of course, where the semiconductor element 1 by the cap is omitted sink 8 the thermal resistance between it is possible to further decrease, it is possible to further improve heat dissipation. また、キャップ7を取付ける工程が削減されるのでコストが低下できる。 Moreover, it decreases the cost since the step of attaching the cap 7 is reduced.

【0014】図5は本発明の実施例3の断面図である。 [0014] FIG. 5 is a sectional view of a third embodiment of the present invention.
この実施例では半導体素子1を搭載した回路基板3をシリコン樹脂等の接着剤11によりパッケージ8の内底面に接着して固定し、半導体素子1とインナーリード5とをAuワイヤ12により接続する。 In this embodiment adhered and fixed to the inner bottom of the package 8 by an adhesive 11 such as silicone resin circuit board 3 mounted with semiconductor device 1, the semiconductor element 1 and the inner leads 5 are connected by Au wire 12. また、パッケージ4 In addition, the package 4
の開口部はヒートシンク8で直接封止する。 The openings to seal directly with the heat sink 8. そして、半導体素子1の裏面とヒートシンク8の内面とを伝熱性金属フォイル9で接続する。 Then, an inner surface of the back surface and the heat sink 8 of the semiconductor element 1 are connected by thermally conductive metal foil 9. そして、ここでは伝熱性金属フォイル9の山と山の間、或いは谷と谷の間の各凹み部分には高熱伝導率で柔軟性の優れた樹脂13を充填させている。 Then, and where between the crests of the thermally conductive metal foil 9, or in each recessed portion between the troughs is filled excellent resin 13 of flexible high thermal conductivity.

【0015】この構成によれば、実施例2と同様に伝熱性金属フォイル9により半導体素子1の放熱効果を高め、かつ熱応力を緩和する効果を得ることができる。 According to this structure, improved heat dissipation efficiency of the semiconductor element 1 by heat transfer metal foil 9 in the same manner as in Example 2, and it is possible to obtain the effect of reducing the thermal stress. また、回路基板3をパッケージ4に直接固定しているので、振動に対する強度が増加でき、また、回路基板3とインナーリード5を金属ワイヤ12で接続しているのでTABが不要となり、更なる低コスト化が可能となる。 Further, since the directly fixed circuit board 3 in the package 4, can increase strength against vibrations, also TAB becomes unnecessary because the circuit board 3 and the inner leads 5 are connected by a metal wire 12, a further low cost can be achieved.
また、伝熱性フォイル9に高熱伝導率で柔軟性の優れた樹脂13を充填しているので、振動に対する強度が増加するとともに、半導体素子1とヒートシンク8との間の熱伝達径路の断面積が増加でき、熱抵抗を更に低下することができる。 Further, since the filled excellent resin 13 of flexible high thermal conductivity heat transfer foil 9, the strength against vibrations is increased, the cross-sectional area of ​​the heat transfer path between the semiconductor element 1 and the heat sink 8 can be increased, it is possible to further reduce the thermal resistance. なお、実施例3においては、実施例1のようにキャップを設けた構造としても良い。 In Example 3, it may have a structure in which a cap as in Example 1. また、伝熱性フォイルに充填する樹脂は、フォイルの表面に所要厚さで塗布した構成としてもよい。 The resin to be filled in the heat transfer foil may be formed by applying a required thickness on the surface of the foil.

【0016】 [0016]

【発明の効果】以上説明したように本発明は、パッケージ内に内装された半導体素子とキャップあるいはヒートシンクとを柔軟な形状に加工された高伝熱性の伝熱性金属フォイルにより接続しているので、半導体素子で発生した熱を効率良くキャップあるいはヒートシンクに伝達して放熱することができるとともに、半導体素子とキャップあるいはヒートシンクとの間に生じる熱応力をその柔軟性により緩和して半導体素子における接続不良や破損等を防止することができ、かつ、伝熱性金属フォイルは、高熱伝導性の薄い金属板を波形状に加工し、その山部を半導体素子またはキャップあるいはヒートシンクの一方に接続し、谷部を他方に接続しているので、山と山あるいは谷と谷のピッチを狭くすれば半導体素子とキャップあるいはヒー The present invention described above, according to the present invention, since connected by heat transfer metal foil high thermal conductivity which is processed and a semiconductor element and a cap or a heat sink which is furnished in the package a flexible shape, it is possible to heat radiation by transferring heat generated by the semiconductor element efficiently cap or heat sink failure Ya connection in the semiconductor device is relaxed by heat stress that flexibility generated between the semiconductor device and the cap or the heat sink etc. can be prevented from being damaged, and heat transfer metal foil is processed high thermal conductivity thin metal plate in the waveform shape, and connecting the crests on one of the semiconductor element or cap, or heat sink, the valleys since the connection to the other, the semiconductor element and the cap or heating if narrowing the pitch of the crests or troughs シンクの間に広い接触面積を得ることができ、 かつ複数の山部と谷部とのそれぞれの間にお It is possible to obtain a large contact area between the sink and your multiple peaks and between the respective valleys
いて並列状態で熱が伝導されるため、伝熱効果を高めることが可能となり、半導体素子の放熱効果を高めること Since heat is conducted in a parallel state have, Ri Do is possible to enhance the heat transfer effect, to enhance the heat dissipation effect of the semiconductor element
ができる。 It is Ru can. 更に、伝熱性金属フォイルに切溝を形成することで、縦横方向の柔軟性を向上することが可能となり、熱応力の緩和ないし吸収効果を高めることができる。 Further, by forming the cut grooves in the heat transfer metal foil, it is possible to improve the flexibility of the vertical and horizontal directions, it is possible to enhance the relaxing or absorbing effect of the thermal stress. また、本発明の伝熱性金属フォイルは、作製が容易であり、パッケージへのアセンブリも容易であるので製造コストを低くすることができる効果もある。 Further, heat transfer metal foil of the present invention, prepared is easy, effective also it is possible to lower the manufacturing cost because the assembly to the package is easy.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】本発明の実施例1の断面図である。 1 is a cross-sectional view of a first embodiment of the present invention.

【図2】伝熱性フォイルを示す図であり、(a)は平面図、(b)はA部の拡大斜視図である。 [Figure 2] is a diagram showing a thermally conductive foil, (a) shows the plan view, (b) is an enlarged perspective view of A portion.

【図3】実施例1の効果を説明するための模式図である。 3 is a schematic diagram for explaining the effects of the first embodiment.

【図4】本発明の実施例2の断面図である。 4 is a cross-sectional view of a second embodiment of the present invention.

【図5】本発明の実施例3の断面図である。 5 is a cross-sectional view of a third embodiment of the present invention.

【図6】従来の半導体装置の一例の断面図である。 6 is a cross-sectional view of a conventional semiconductor device.

【図7】改善された従来の半導体装置の断面図である。 7 is a cross-sectional view of an improved conventional semiconductor device.

【符号の説明】 DESCRIPTION OF SYMBOLS

1 半導体素子 3 回路基板 4 パッケージ 7 キャップ 8 ヒートシンク 9 伝熱性金属フォイル 13 高熱伝導率で柔軟な樹脂 Flexible resin in 1 semiconductor element 3 circuit board 4 package 7 the cap 8 heatsink 9 thermally conductive metal foil 13 a high thermal conductivity

Claims (3)

    (57)【特許請求の範囲】 (57) [the claims]
  1. 【請求項1】 半導体素子を回路基板に搭載してパッケージ内に封止し、このパッケージに設けたキャップあるいはヒートシンクと前記半導体素子とを熱的に接続して半導体素子の放熱を行うように構成した半導体装置において、前記半導体素子とキャップあるいはヒートシンクとを柔軟な形状に加工された伝熱性金属フォイルにより接続し、この伝熱性金属フォイルは、高熱伝導性の薄い 1. A by mounting a semiconductor element on a circuit board sealed in a package, constituting a cap or a heat sink provided on the package and the semiconductor device to perform the heat radiation of the semiconductor element is thermally connected in a semiconductor device in which the connected with the semiconductor element and the cap or thermally conductive metal foil and a heat sink is processed into a flexible shape, the thermally conductive metal foil, thin high thermal conductivity
    金属板を波形状に加工し、その複数の山部を半導体素子 And forming a metal plate into corrugated, semiconductor devices that plurality of peaks
    とキャップあるいはヒートシンクとの一方に接続し、複 And connected to one of the cap or the heat sink, double
    数の谷部を他方に接続したことを特徴とする半導体装置。 Wherein a connecting a valley portion of the number on the other.
  2. 【請求項2】伝熱性金属フォイルは、波形状の山部または谷部の幅方向の一部には、波の連続方向に沿って切溝を形成してなる請求項1の半導体装置。 2. A thermally conductive metal foil, corrugated part in the width direction of the mountain portion or valley, the semiconductor device according to claim 1 comprising forming a kerf along the continuing direction of the wave.
  3. 【請求項3】伝熱性金属フォイルは、AlおよびAl 3. A thermally conductive metal foil, Al and Al
    合金、あるいはCuおよびCu合金で形成され、半導体素子とキャップあるいはヒートシンクにそれぞれ半田で接続してなる請求項1または2の半導体装置。 Alloy or formed with Cu and Cu alloys, formed by connected by soldering to a semiconductor device and the cap or the heat sink according to claim 1 or 2 of the semiconductor device.
JP30699993A 1993-11-15 1993-11-15 Semiconductor device Expired - Fee Related JP2570605B2 (en)

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JP30699993A JP2570605B2 (en) 1993-11-15 1993-11-15 Semiconductor device
US08/341,933 US5528456A (en) 1993-11-15 1994-11-15 Package with improved heat transfer structure for semiconductor device

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JPH07142647A JPH07142647A (en) 1995-06-02
JP2570605B2 true JP2570605B2 (en) 1997-01-08

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