JPS58219703A - 酸化錫を含む導電相の製造方法 - Google Patents

酸化錫を含む導電相の製造方法

Info

Publication number
JPS58219703A
JPS58219703A JP58095135A JP9513583A JPS58219703A JP S58219703 A JPS58219703 A JP S58219703A JP 58095135 A JP58095135 A JP 58095135A JP 9513583 A JP9513583 A JP 9513583A JP S58219703 A JPS58219703 A JP S58219703A
Authority
JP
Japan
Prior art keywords
dispersion
composition
metal
pyrochlore
fine powder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58095135A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0422005B2 (en, 2012
Inventor
ジエイコブ・ホ−マダリ−
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of JPS58219703A publication Critical patent/JPS58219703A/ja
Publication of JPH0422005B2 publication Critical patent/JPH0422005B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Conductive Materials (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
JP58095135A 1982-06-01 1983-05-31 酸化錫を含む導電相の製造方法 Granted JPS58219703A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US38345282A 1982-06-01 1982-06-01
US383452 1982-06-01
US460572 1983-01-24

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP3084243A Division JPH06653B2 (ja) 1982-06-01 1991-04-16 酸化スズを含むパイロクロール化合物の製造方法
JP3084238A Division JPH07111923B2 (ja) 1982-06-01 1991-04-16 抵抗素子の製造方法
JP3084247A Division JPH0636401B2 (ja) 1982-06-01 1991-04-16 厚膜抵抗用組成物

Publications (2)

Publication Number Publication Date
JPS58219703A true JPS58219703A (ja) 1983-12-21
JPH0422005B2 JPH0422005B2 (en, 2012) 1992-04-15

Family

ID=23513215

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58095135A Granted JPS58219703A (ja) 1982-06-01 1983-05-31 酸化錫を含む導電相の製造方法

Country Status (1)

Country Link
JP (1) JPS58219703A (en, 2012)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017069022A1 (ja) * 2015-10-20 2017-04-27 国立研究開発法人産業技術総合研究所 酸化物半導体
WO2017204202A1 (ja) * 2016-05-25 2017-11-30 国立研究開発法人産業技術総合研究所 酸化物半導体
WO2018155034A1 (ja) * 2017-02-23 2018-08-30 国立研究開発法人産業技術総合研究所 酸化物半導体及び半導体装置
WO2018155033A1 (ja) * 2017-02-23 2018-08-30 国立研究開発法人産業技術総合研究所 酸化物半導体及び半導体装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51125898A (en) * 1975-03-21 1976-11-02 Trw Inc Resistive material and electric resistance and method of manufacture thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51125898A (en) * 1975-03-21 1976-11-02 Trw Inc Resistive material and electric resistance and method of manufacture thereof

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017069022A1 (ja) * 2015-10-20 2017-04-27 国立研究開発法人産業技術総合研究所 酸化物半導体
JPWO2017069022A1 (ja) * 2015-10-20 2018-07-19 国立研究開発法人産業技術総合研究所 酸化物半導体
WO2017204202A1 (ja) * 2016-05-25 2017-11-30 国立研究開発法人産業技術総合研究所 酸化物半導体
WO2018155034A1 (ja) * 2017-02-23 2018-08-30 国立研究開発法人産業技術総合研究所 酸化物半導体及び半導体装置
WO2018155033A1 (ja) * 2017-02-23 2018-08-30 国立研究開発法人産業技術総合研究所 酸化物半導体及び半導体装置
JPWO2018155033A1 (ja) * 2017-02-23 2019-12-19 国立研究開発法人産業技術総合研究所 酸化物半導体及び半導体装置
JPWO2018155034A1 (ja) * 2017-02-23 2019-12-19 国立研究開発法人産業技術総合研究所 酸化物半導体及び半導体装置
US11239322B2 (en) 2017-02-23 2022-02-01 National Institute Of Advanced Industrial Science And Technology P-type oxide semiconductor and semiconductor device having pyrochlore structure

Also Published As

Publication number Publication date
JPH0422005B2 (en, 2012) 1992-04-15

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