JPS5821919A - パルス増幅回路 - Google Patents

パルス増幅回路

Info

Publication number
JPS5821919A
JPS5821919A JP56121225A JP12122581A JPS5821919A JP S5821919 A JPS5821919 A JP S5821919A JP 56121225 A JP56121225 A JP 56121225A JP 12122581 A JP12122581 A JP 12122581A JP S5821919 A JPS5821919 A JP S5821919A
Authority
JP
Japan
Prior art keywords
voltage
switching element
trqd
transistor
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56121225A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0325968B2 (OSRAM
Inventor
Toyoshi Kawada
外与志 河田
Hisashi Yamaguchi
久 山口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56121225A priority Critical patent/JPS5821919A/ja
Publication of JPS5821919A publication Critical patent/JPS5821919A/ja
Publication of JPH0325968B2 publication Critical patent/JPH0325968B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT

Landscapes

  • Electronic Switches (AREA)
  • Manipulation Of Pulses (AREA)
JP56121225A 1981-07-31 1981-07-31 パルス増幅回路 Granted JPS5821919A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56121225A JPS5821919A (ja) 1981-07-31 1981-07-31 パルス増幅回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56121225A JPS5821919A (ja) 1981-07-31 1981-07-31 パルス増幅回路

Publications (2)

Publication Number Publication Date
JPS5821919A true JPS5821919A (ja) 1983-02-09
JPH0325968B2 JPH0325968B2 (OSRAM) 1991-04-09

Family

ID=14805991

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56121225A Granted JPS5821919A (ja) 1981-07-31 1981-07-31 パルス増幅回路

Country Status (1)

Country Link
JP (1) JPS5821919A (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101001282B1 (ko) 2008-07-18 2010-12-14 충남대학교산학협력단 Ｌｄｍｏｓ ｆｅｔ를 이용한 ｌ-대역 고속 펄스 고전력증폭기

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5099260A (OSRAM) * 1973-12-28 1975-08-06
JPS51132757A (en) * 1975-05-14 1976-11-18 Hitachi Ltd Optical observation device
JPS5217758A (en) * 1975-07-31 1977-02-09 Fujitsu Ltd Pulse generator circuit
JPS5257769A (en) * 1975-11-07 1977-05-12 Hitachi Ltd Analog switch

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5099260A (OSRAM) * 1973-12-28 1975-08-06
JPS51132757A (en) * 1975-05-14 1976-11-18 Hitachi Ltd Optical observation device
JPS5217758A (en) * 1975-07-31 1977-02-09 Fujitsu Ltd Pulse generator circuit
JPS5257769A (en) * 1975-11-07 1977-05-12 Hitachi Ltd Analog switch

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101001282B1 (ko) 2008-07-18 2010-12-14 충남대학교산학협력단 Ｌｄｍｏｓ ｆｅｔ를 이용한 ｌ-대역 고속 펄스 고전력증폭기

Also Published As

Publication number Publication date
JPH0325968B2 (OSRAM) 1991-04-09

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