JPS58216425A - 半導体シリコン基板の製造方法 - Google Patents

半導体シリコン基板の製造方法

Info

Publication number
JPS58216425A
JPS58216425A JP57099270A JP9927082A JPS58216425A JP S58216425 A JPS58216425 A JP S58216425A JP 57099270 A JP57099270 A JP 57099270A JP 9927082 A JP9927082 A JP 9927082A JP S58216425 A JPS58216425 A JP S58216425A
Authority
JP
Japan
Prior art keywords
mirror
wafer
bsd
oxygen
hold time
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57099270A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0319688B2 (cg-RX-API-DMAC10.html
Inventor
Nobuyuki Akiyama
信之 秋山
Mitsuo Kono
光雄 河野
Ryusuke Oota
太田　竜介
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Techxiv Corp
Original Assignee
Komatsu Electronic Metals Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Electronic Metals Co Ltd filed Critical Komatsu Electronic Metals Co Ltd
Priority to JP57099270A priority Critical patent/JPS58216425A/ja
Publication of JPS58216425A publication Critical patent/JPS58216425A/ja
Publication of JPH0319688B2 publication Critical patent/JPH0319688B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P36/03—

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)
  • Formation Of Insulating Films (AREA)
JP57099270A 1982-06-11 1982-06-11 半導体シリコン基板の製造方法 Granted JPS58216425A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57099270A JPS58216425A (ja) 1982-06-11 1982-06-11 半導体シリコン基板の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57099270A JPS58216425A (ja) 1982-06-11 1982-06-11 半導体シリコン基板の製造方法

Publications (2)

Publication Number Publication Date
JPS58216425A true JPS58216425A (ja) 1983-12-16
JPH0319688B2 JPH0319688B2 (cg-RX-API-DMAC10.html) 1991-03-15

Family

ID=14242988

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57099270A Granted JPS58216425A (ja) 1982-06-11 1982-06-11 半導体シリコン基板の製造方法

Country Status (1)

Country Link
JP (1) JPS58216425A (cg-RX-API-DMAC10.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62238629A (ja) * 1986-04-09 1987-10-19 Nec Corp 半導体基板の製造方法
JPH01244621A (ja) * 1988-03-25 1989-09-29 Shin Etsu Handotai Co Ltd シリコン単結晶基板の表面清浄化方法
JPH0222823A (ja) * 1988-07-11 1990-01-25 Toshiba Corp シリコン基板の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62238629A (ja) * 1986-04-09 1987-10-19 Nec Corp 半導体基板の製造方法
JPH01244621A (ja) * 1988-03-25 1989-09-29 Shin Etsu Handotai Co Ltd シリコン単結晶基板の表面清浄化方法
JPH0222823A (ja) * 1988-07-11 1990-01-25 Toshiba Corp シリコン基板の製造方法

Also Published As

Publication number Publication date
JPH0319688B2 (cg-RX-API-DMAC10.html) 1991-03-15

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