JPS58214148A - レジスト材料および微細パタ−ン形成方法 - Google Patents

レジスト材料および微細パタ−ン形成方法

Info

Publication number
JPS58214148A
JPS58214148A JP57098090A JP9809082A JPS58214148A JP S58214148 A JPS58214148 A JP S58214148A JP 57098090 A JP57098090 A JP 57098090A JP 9809082 A JP9809082 A JP 9809082A JP S58214148 A JPS58214148 A JP S58214148A
Authority
JP
Japan
Prior art keywords
resist
layer
etching
lower alkyl
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57098090A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0364861B2 (enExample
Inventor
Shigeyoshi Suzuki
成嘉 鈴木
Kazuhide Saigo
斉郷　和秀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57098090A priority Critical patent/JPS58214148A/ja
Priority to US06/501,201 priority patent/US4551417A/en
Priority to CA000429834A priority patent/CA1207216A/en
Priority to IE1339/83A priority patent/IE54731B1/en
Priority to EP83303324A priority patent/EP0096596B2/en
Priority to DE8383303324T priority patent/DE3363914D1/de
Publication of JPS58214148A publication Critical patent/JPS58214148A/ja
Publication of JPH0364861B2 publication Critical patent/JPH0364861B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • H10P50/73—

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • ing And Chemical Polishing (AREA)
JP57098090A 1982-06-08 1982-06-08 レジスト材料および微細パタ−ン形成方法 Granted JPS58214148A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP57098090A JPS58214148A (ja) 1982-06-08 1982-06-08 レジスト材料および微細パタ−ン形成方法
US06/501,201 US4551417A (en) 1982-06-08 1983-06-06 Method of forming patterns in manufacturing microelectronic devices
CA000429834A CA1207216A (en) 1982-06-08 1983-06-07 Method of forming patterns in manufacturing microelectronic devices
IE1339/83A IE54731B1 (en) 1982-06-08 1983-06-07 Microelectronic device manufacture
EP83303324A EP0096596B2 (en) 1982-06-08 1983-06-08 Microelectronic device manufacture
DE8383303324T DE3363914D1 (en) 1982-06-08 1983-06-08 Microelectronic device manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57098090A JPS58214148A (ja) 1982-06-08 1982-06-08 レジスト材料および微細パタ−ン形成方法

Publications (2)

Publication Number Publication Date
JPS58214148A true JPS58214148A (ja) 1983-12-13
JPH0364861B2 JPH0364861B2 (enExample) 1991-10-08

Family

ID=14210639

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57098090A Granted JPS58214148A (ja) 1982-06-08 1982-06-08 レジスト材料および微細パタ−ン形成方法

Country Status (1)

Country Link
JP (1) JPS58214148A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60229026A (ja) * 1984-03-02 1985-11-14 アメリカン　テレフオン　アンド　テレグラフ　カムパニ− 電子デバイスの製造方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7204146B2 (ja) * 2020-07-30 2023-01-16 株式会社大一商会 遊技機
JP7204147B2 (ja) * 2020-07-30 2023-01-16 株式会社大一商会 遊技機
JP7204150B2 (ja) * 2020-10-01 2023-01-16 株式会社大一商会 遊技機
JP7204151B2 (ja) * 2020-10-01 2023-01-16 株式会社大一商会 遊技機
JP7204148B2 (ja) * 2020-10-01 2023-01-16 株式会社大一商会 遊技機
JP7204149B2 (ja) * 2020-10-01 2023-01-16 株式会社大一商会 遊技機

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60229026A (ja) * 1984-03-02 1985-11-14 アメリカン　テレフオン　アンド　テレグラフ　カムパニ− 電子デバイスの製造方法

Also Published As

Publication number Publication date
JPH0364861B2 (enExample) 1991-10-08

Similar Documents

Publication Publication Date Title
US4464460A (en) Process for making an imaged oxygen-reactive ion etch barrier
JPH0456977B2 (enExample)
JPH0511457A (ja) フオトリソグラフイによる構造物の製造方法
JPS62270952A (ja) 二層フオトレジストの現像
JPS58214148A (ja) レジスト材料および微細パタ−ン形成方法
JPH024260A (ja) 放射線感応性記録材料及び画像の形成法
JPS5949536A (ja) 微細パタ−ン形成方法
US4701342A (en) Negative resist with oxygen plasma resistance
US4612270A (en) Two-layer negative resist
JP2901044B2 (ja) 三層レジスト法によるパターン形成方法
JPS6360892B2 (enExample)
JPS63292128A (ja) シリル化ポリ（ビニル）フェノールフォトレジスト
JPH05249681A (ja) 酸分解性化合物及びそれを含有するポジ型感放射線性レジスト組成物
JPH02248952A (ja) 感光性組成物
JP3118887B2 (ja) パターン形成方法
JPH0727211B2 (ja) レジスト構造体の製造方法
JPS62258449A (ja) ２層レジスト像を作成する方法
JPH0334053B2 (enExample)
JPS59121042A (ja) ネガ型レジスト組成物
JPH0365545B2 (enExample)
JPH061382B2 (ja) 放射線感応性材料
JPS61260242A (ja) レジストパタ−ンの形成方法
JPH09171951A (ja) レジストパターンの形成方法
JPS6240725A (ja) 電子線レジスト組成物及びレジストパタ−ンの形成方法
JPS6234908A (ja) ケイ素とビニル基を含むα−メチルスチレン系重合体とそれを含む組成物とその使用方法