JPS58210717A - Voltage controlled oscillator circuit - Google Patents

Voltage controlled oscillator circuit

Info

Publication number
JPS58210717A
JPS58210717A JP57093775A JP9377582A JPS58210717A JP S58210717 A JPS58210717 A JP S58210717A JP 57093775 A JP57093775 A JP 57093775A JP 9377582 A JP9377582 A JP 9377582A JP S58210717 A JPS58210717 A JP S58210717A
Authority
JP
Japan
Prior art keywords
gate
mo8fet
output
channel
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57093775A
Other languages
Japanese (ja)
Inventor
Masahiro Naka
中 正博
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57093775A priority Critical patent/JPS58210717A/en
Publication of JPS58210717A publication Critical patent/JPS58210717A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/354Astable circuits

Abstract

PURPOSE:To eliminate the risk of a latch-up state by charging two capacitors through FETs by a current source. CONSTITUTION:When the output of an NOR gate 41 is at a logical level ''1'' and the output of an NOR gate 42 at a logical level ''0'', FETs 21 and 32 turn on and FETs 22 and 31 turn off; and a capacitor C52 contains no charge and a C51 is charged by the current source 11 through the FET21. Then once the capacitor is charged until the drain voltage of the FET31 exceeds the threshold voltage level of the NOR gate 41, the output of the NOR gate 41 is ''0'' and the output of the gate 42 is ''1''. Then, the FETs 22 and 32 turn off and the FETs 21 and 32 turn off. At this time, the C51 is discharged through the FET31 and the C52 is charged by the current source 11 through the FET22. Once the drain of the FET32 exceeds the threshold voltage V of the gate 42, the output of the gate 42 is ''0'' and the output of the gate 41 is ''1'', which is the last state. The C51 and C52 are charged and discharged repeatedly, but a potential lower than the ground level is not generated in the circuit, and there is no risk of the latch-up state.

Description

【発明の詳細な説明】 この発明は集積回路に応用した時ラッチアップを防止す
ることを目的としたC M OSを用いた′電圧制御発
振回路に関するものでおる。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a voltage controlled oscillation circuit using CMOS, which is intended to prevent latch-up when applied to an integrated circuit.

〈従来技術〉 従来用いられている電圧制御発振回路は第1図に示す回
路が良く知られている。第1図においてNORゲート4
1とNORゲート42でセットリセットフリップフロッ
プが構成されている。いま仮にNORゲート41の出力
が論理レベル@l#、NORゲート42の出力が64 
Mレベル“0”とするとPチャネルMO8FET21、
Nチャネル5iosFFiT32がON、PチャネルM
O8FET22、NチャネルMO8FET31がOFF
になっている。
<Prior Art> As a conventionally used voltage controlled oscillation circuit, the circuit shown in FIG. 1 is well known. In Figure 1, NOR gate 4
1 and the NOR gate 42 constitute a set/reset flip-flop. Now suppose that the output of the NOR gate 41 is at logic level @l#, and the output of the NOR gate 42 is 64.
When M level is “0”, P channel MO8FET21,
N channel 5iosFFiT32 is ON, P channel M
O8FET22 and N-channel MO8FET31 are OFF
It has become.

従って電圧制御定電流源11の′電流は電汀端子61よ
り FET 21を通じてコンデンサ51に流れ込み、
これを充電する。又FET32がONになっているため
NORゲート42の入力端子は接地電位になっている。
Therefore, the current of the voltage controlled constant current source 11 flows from the voltage terminal 61 to the capacitor 51 through the FET 21.
Charge this. Furthermore, since the FET 32 is turned on, the input terminal of the NOR gate 42 is at ground potential.

コンデンサ51への充電によりNORゲート41の入力
が11“となるとその出力が”O″となる。この時NO
Rゲート420入力は両方共″0”となるためその出力
は@1”となる。従ってPチャネルMO8FET22、
NチャネルMO8FET31がON、PチャネルMO8
F’E T 21、NチャネルMO8FET32がOF
Fとなる。NチャネルMO8FET31がONとなるた
めNチャネルMO8F’E T 31のドレインL@0
”となシ、PチャネルMO8FET22を通じてコンデ
ンサ51に定電流源11から充電が行われる。この充電
によりPチャネルMO8FET22のソースが11#と
なるとNORゲート42の出力が反転して@0”となり
、NORゲート41の出力は@1#となる。
When the input of the NOR gate 41 becomes 11" due to charging of the capacitor 51, its output becomes "O". At this time, NO
Since both R gate 420 inputs are "0", its output is @1". Therefore, P channel MO8FET22,
N-channel MO8FET31 is ON, P-channel MO8
F'ET 21, N-channel MO8FET32 is OF
It becomes F. Since the N-channel MO8FET31 is turned on, the drain L@0 of the N-channel MO8F'ET31 is turned on.
``Then, the capacitor 51 is charged from the constant current source 11 through the P-channel MO8FET 22. When the source of the P-channel MO8FET 22 becomes 11# due to this charging, the output of the NOR gate 42 is inverted and becomes @0'', and the NOR The output of gate 41 becomes @1#.

この動作において、PチャネルMO8FE T 21又
U22がONとなってからNORゲート41゜42が反
転するまでの時間Tは次の通シである。
In this operation, the time T from when the P-channel MO8FET 21 or U22 is turned on until the NOR gates 41 and 42 are inverted is as follows.

NOROR141,42のしきい値電圧をVとすれば、
その時のコンデン?51の電荷QはQ=CV となり、定電流源11の電流を1とすれは、Q=IT であるから、 ev T=− ■ となる。従ってNOROR1441’t 42が反転し
てから時間Tかかつて再びNOROR141,42が反
転を繰り返すことになる。上記式から分るように時間T
は電流工の関数であシ、反転を緑シ返す、すなわち発振
の周波数は電流■で制御されることになる。この電流工
は印加電圧によ多制御される。
If the threshold voltage of NOROR141, 42 is V, then
Conden at that time? 51 becomes Q=CV, and if the current of the constant current source 11 is 1, then Q=IT, so ev T=- (2). Therefore, the NORORs 141 and 42 will repeat the inversion again at a time T after the NOROR 1441't 42 is inverted. As can be seen from the above formula, time T
is a function of the current, and the inversion is returned, that is, the frequency of oscillation is controlled by the current. This electrical current is controlled by the applied voltage.

しかしながら従来の回路はNfヤネルM OS FET
31,32のON抵抗に比べて電流源11のインピーダ
ンスが非常に高いため、スイッチング時に回路内に接地
電位以下の電位が生じラッチアップを起す原因となる欠
点があった。
However, the conventional circuit is Nf Yarnel MOS FET.
Since the impedance of the current source 11 is very high compared to the ON resistance of the circuits 31 and 32, there is a drawback that a potential below the ground potential is generated in the circuit during switching, causing latch-up.

これは例えばNチャネルMO8FET32、Pチャネル
MO8FET21が0N1NチャネルMO8FET31
、PチャネルMO8FET22がOFFしている状態で
コンデンサ51の充電がNORゲート41のしきい値′
電圧Vにまで達した時、FET32 、21がOFF、
FET31.22がONとなる。この時NチャネルMO
8IT31のON抵抗は電流源11の出力インピーダン
スに比べt1ソ0、電流源11の出力インピーダンスは
はy無限大と考えられるからFET31のドレイ/は接
地電位(OV)、FET32のドレインは−vCv〕と
なる。このようにCMO8集積回路内にこの回路を使用
すると、接地電位以下の部分が生じるため、これをトリ
ガとしてラッチアップを生じる危険性があるという欠点
があった。
For example, N-channel MO8FET32 and P-channel MO8FET21 are 0N1N-channel MO8FET31.
, the charging of the capacitor 51 reaches the threshold value of the NOR gate 41 when the P-channel MO8FET 22 is OFF.
When the voltage reaches V, FETs 32 and 21 turn off,
FET31.22 is turned ON. At this time, N channel MO
The ON resistance of 8IT31 is t1 so 0 compared to the output impedance of current source 11, and the output impedance of current source 11 is considered to be infinite, so the drain of FET31 is ground potential (OV), and the drain of FET32 is -vCv] becomes. When this circuit is used in a CMO8 integrated circuit as described above, there is a problem that a portion below the ground potential is generated, and there is a risk that latch-up may occur using this as a trigger.

〈発明の概要〉 この発明の目的は回路内に接地電位以下の電位を生じる
ことがなく、従ってラッチアップの危険性のない電圧制
御発振回路を提棋することにある。
<Summary of the Invention> An object of the present invention is to provide a voltage controlled oscillator circuit that does not generate a potential below the ground potential within the circuit and is therefore free from the risk of latch-up.

この発明によれば電圧によ多制御される定電流源の一端
は電源端子に接続され、他端に第1.第2のPチャネ/
I/MO8FETのソースが接続され、その第1のPチ
ャネルMO8FETのドレインに、k41ONチャネル
MO8FETのドレインと、第1のコンデンサの一端と
、更にセットリセットフリップ70ツブのリセット端子
とが接続される。この7リツプ70ツブはそのリセット
端子が高−理レベルでセット端子が低論理レベルのとき
第1の出力端子が低論理レベル、第2の出力端子が高論
理レベルにそれぞれなり、リセット端子が低論理レベル
でセット端子が高論理レベルのときh31の出力端子が
高論理レベル、第2の出力端子が低論理レベルとなるも
のである。このフリッププロップの第2の出力端子は前
記第1のNチャネルMO8FETのゲートと、第10P
チヤネルMO8FETのゲートとに接続される。前記第
2のPチャネルMO8FETのドレインに、社2のNチ
ャネルMO8FETのドレインと、第2のコンデンサの
一端ト、前記セットリセットフリップフロップのセット
端子とが接続され、第2のNチャネルMO8FETのゲ
ートと@20PチャネルMO8FETのゲートとは前記
セットリセットフリップフロップの第1の出力端子に接
続される。前記第1.第2のNチャネルMO8FETの
ソース、前記第1.第2のコンデンサの他端はそれぞれ
接地される。
According to this invention, one end of the constant current source controlled by voltage is connected to the power supply terminal, and the other end is connected to the first terminal. 2nd P channel/
The source of the I/MO8FET is connected, and the drain of the first P-channel MO8FET is connected to the drain of the k41ON channel MO8FET, one end of the first capacitor, and the reset terminal of the set-reset flip 70 tube. When the reset terminal of this 7-lip 70 tube is at a high logic level and the set terminal is at a low logic level, the first output terminal becomes a low logic level, the second output terminal becomes a high logic level, and the reset terminal becomes a low logic level. When the set terminal is at a high logic level, the output terminal of h31 is at a high logic level, and the second output terminal is at a low logic level. The second output terminal of this flip-flop is connected to the gate of the first N-channel MO8FET and the 10th P
It is connected to the gate of channel MO8FET. The drain of the second P-channel MO8FET is connected to the drain of the second N-channel MO8FET, one end of the second capacitor, and the set terminal of the set-reset flip-flop. and the gate of the @20P channel MO8FET are connected to the first output terminal of the set-reset flip-flop. Said 1st. the source of the second N-channel MO8FET; The other ends of the second capacitors are each grounded.

く天施例〉 仄にこの発明を第2図の実施例を診照して説明する。屯
圧制伺j電流源11の一端は電碑端子61に接続され、
他端はPチャネルMO8FE T 21 。
Embodiment> This invention will be briefly explained with reference to the embodiment shown in FIG. One end of the current source 11 is connected to the electric terminal 61,
The other end is a P channel MO8FE T21.

22のソースに接続される。PチャネルMO8FE’r
21,22のドレインはNチャネルMO8FET31.
32に接続されると共に、NORグー)41.42で構
成されるセットリセットフリップフロップのリセット端
子、セット端子にそれぞれ接続され、更にコンデンサ5
1.52の一端に接続される。NチャネルMO8FET
31.32のソース、コンデンサ51.52の他端はそ
れぞれ接地され、NORグー)41,42の出力はFE
T22.32、FET21,31の各ゲートに接続され
る。
Connected to 22 sources. P channel MO8FE'r
The drains of 21 and 22 are N-channel MO8FETs 31.
32, and is connected to the reset terminal and set terminal of a set-reset flip-flop composed of NOR (NOR) 41 and 42, respectively, and is further connected to a capacitor 5.
Connected to one end of 1.52. N-channel MO8FET
The sources of 31 and 32 and the other ends of capacitors 51 and 52 are respectively grounded, and the outputs of 41 and 42 are FE
T22.32 is connected to each gate of FET21 and FET31.

今、NORグー)41の出力が論理レベル@1#、N 
ORゲート42の出力が論理レベル@0#になっていた
とすると、FET21.32がON、FET22.31
がOFFとなシ、コンデンサ52の電荷はゼロ、コンデ
ンサ51はFET21をirすじて電流源11よシミ荷
が供給されている。やがてコンデンサ51への充電が進
んでFET31のドレイン電圧が2人力NORゲート4
1のしきい値電圧レベルを超すとNORゲート41の出
力は′″0#にゲート42の出力は11#となる。よつ
でFET22.31がON、FET21.32がOFF
となる。このときコンデンサ51の電荷はF E Ta
2を通じて放電し、コンデンサ52は電荷苓よ、9FE
T22を通じて電流源11よシミ荷が供給される。この
充電によりFET32のドレインがゲート42のしきい
値電圧Vを越えるとゲート42の出力は′″0″、ゲー
ト41の出力は”1”となシ前の状態にもどる。よって
コンデンサ51,521d充放電を繰シ返すことになる
が回路上に接地電圧よシ低い電位は発生せずラッチアッ
プの危険性はない。
Now, the output of NOR) 41 is at logic level @1#, N
If the output of OR gate 42 is at logic level @0#, FET21.32 is ON, FET22.31
is off, the charge on the capacitor 52 is zero, and the capacitor 51 is supplied with a stain from the current source 11 through the FET 21. Eventually, charging of the capacitor 51 progresses, and the drain voltage of the FET 31 increases to the level of the two-power NOR gate 4.
When the threshold voltage level of 1 is exceeded, the output of the NOR gate 41 becomes ``0#'' and the output of the gate 42 becomes 11#. Therefore, FET22.31 is turned on and FET21.32 is turned off.
becomes. At this time, the charge of the capacitor 51 is F E Ta
2, the capacitor 52 has a charge of 9FE.
A stain is supplied from the current source 11 through T22. As a result of this charging, when the drain of the FET 32 exceeds the threshold voltage V of the gate 42, the output of the gate 42 becomes ``0'' and the output of the gate 41 becomes ``1'', returning to the previous state. Therefore, although the capacitors 51 and 521d are repeatedly charged and discharged, a potential lower than the ground voltage is not generated on the circuit, and there is no risk of latch-up.

この回路の動作゛においてコンデンサ51 、52の充
電時間は、コンデンサ51.52の容量をC1、CI、
定電流源11の電流値を工、NORゲート41.42の
しきい値電圧をVとすれば、コンデンサ51の充電時間
は コンデンサ52の充電時間は となる。NORゲート41.42の出力よシ得られる発
振周波数はCl=C!ならはデユティ50チC*   
C1,− の波形が、C1べC2のときはゴー又はで7の1ニアい イの波形が得られる。
In the operation of this circuit, the charging time of the capacitors 51 and 52 is as follows:
If the current value of the constant current source 11 is E and the threshold voltage of the NOR gate 41.42 is V, then the charging time of the capacitor 51 and the capacitor 52 are as follows. The oscillation frequency obtained from the outputs of NOR gates 41 and 42 is Cl=C! Nara Duty 50chi C*
When the waveform of C1,- is C1 and C2, a waveform of 1 near A of Go or 7 is obtained.

〈効 果〉 以上述べたようにこの発明による回路では、いかなる時
も回路内に電源電圧範囲を超える電位が生じないため0
MO8IC内に組込まれた場合でもラッチアップを起す
危険性がない利点を有する。
<Effects> As described above, in the circuit according to the present invention, a potential exceeding the power supply voltage range is not generated in the circuit at any time.
It has the advantage that there is no risk of latch-up even when it is incorporated into a MO8IC.

又、2個のコンデンサの容量比を変えることにより任意
のデユティの出力波形を得ることができる。
Further, by changing the capacitance ratio of the two capacitors, an arbitrary duty output waveform can be obtained.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の電圧制御発振回路を示す接続図、第2図
はこの発明による電圧il′i:+ 0<I発振回路の
一実施例を示す接続図である。 11:電圧開側1電流源、21,22:PチャネルMO
8FET、31.32:NチャネルMO8FET、41
,42:セットリセットフリップフロツブを構成するN
ORグー)、51.52:コンデンサ、61:i!源端
子。 特許出願人  日本電気株式会社 代理人 草野 卓
FIG. 1 is a connection diagram showing a conventional voltage controlled oscillation circuit, and FIG. 2 is a connection diagram showing an embodiment of the voltage il'i:+0<I oscillation circuit according to the present invention. 11: Voltage open side 1 current source, 21, 22: P channel MO
8FET, 31.32: N-channel MO8FET, 41
, 42: N forming the set-reset flip-flop
OR goo), 51.52: Capacitor, 61: i! source terminal. Patent applicant Taku Kusano, agent for NEC Corporation

Claims (1)

【特許請求の範囲】[Claims] (ll’fi!、圧によシ箪流量を制御される電流源の
一端に電源端子が接続され、他端に第1.第2の一導′
「に形MO8FE’f’のソースが接続され、これら第
1、第2の一導電形MO8FETのドレインに、第1、
第2の逆導電形MO8FBTのドレインと、第1、氾2
のコンデンサの一端とそれぞれ接続され、これら第1.
第2の逆導電形MO8FETのソース及び第1.第2の
コンデンサの他端はそれぞれ接地され、上記第1.第2
の二導電形MO8FETと第1.第2の逆導電形MO8
FETとの接続点はセットリセットフリップ7pツブの
二つの入力端子にそれぞれ接続され、このフリップフロ
ップの二つの出力端子は上記第1の一導電形MO8FE
T及び第1の逆導電形MO8FETの各ゲート、上記第
2の一4%形MO8FET及び第2の逆導電形MO8F
ETの各ゲートにそれぞれ接続されてなる電圧制御発振
回路。
(ll'fi!) A power supply terminal is connected to one end of a current source whose flow rate is controlled by pressure, and the first and second conductors are connected to the other end.
The source of the MO8FET'f' is connected to the drain of the first and second one conductivity type MO8FET.
The drain of the second reverse conductivity type MO8FBT, the first, and the second drain
are connected to one end of each of the capacitors of the first and second capacitors.
The source of the second reverse conductivity type MO8FET and the source of the first MO8FET. The other ends of the second capacitors are respectively grounded, and the first and second capacitors are grounded. Second
The two-conductivity type MO8FET and the first one. Second reverse conductivity type MO8
The connection point with the FET is connected to the two input terminals of the set/reset flip 7p tube, and the two output terminals of this flip-flop are connected to the first one-conductivity type MO8FE.
T and each gate of the first reverse conductivity type MO8FET, the second 14% type MO8FET and the second reverse conductivity type MO8F
A voltage controlled oscillator circuit connected to each gate of ET.
JP57093775A 1982-05-31 1982-05-31 Voltage controlled oscillator circuit Pending JPS58210717A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57093775A JPS58210717A (en) 1982-05-31 1982-05-31 Voltage controlled oscillator circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57093775A JPS58210717A (en) 1982-05-31 1982-05-31 Voltage controlled oscillator circuit

Publications (1)

Publication Number Publication Date
JPS58210717A true JPS58210717A (en) 1983-12-08

Family

ID=14091790

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57093775A Pending JPS58210717A (en) 1982-05-31 1982-05-31 Voltage controlled oscillator circuit

Country Status (1)

Country Link
JP (1) JPS58210717A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5773518A (en) * 1980-10-24 1982-05-08 Nec Corp Voltage-controlling oscillator circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5773518A (en) * 1980-10-24 1982-05-08 Nec Corp Voltage-controlling oscillator circuit

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