JPS58207722A - Logical circuit - Google Patents

Logical circuit

Info

Publication number
JPS58207722A
JPS58207722A JP57090609A JP9060982A JPS58207722A JP S58207722 A JPS58207722 A JP S58207722A JP 57090609 A JP57090609 A JP 57090609A JP 9060982 A JP9060982 A JP 9060982A JP S58207722 A JPS58207722 A JP S58207722A
Authority
JP
Japan
Prior art keywords
emitter
base
voltage
transistor
logical circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57090609A
Other languages
Japanese (ja)
Other versions
JPH0261819B2 (en
Inventor
Joji Nokubo
野久保 丞二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57090609A priority Critical patent/JPS58207722A/en
Publication of JPS58207722A publication Critical patent/JPS58207722A/en
Publication of JPH0261819B2 publication Critical patent/JPH0261819B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/086Emitter coupled logic

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To decrease a voltage applied between the emitter and the base of an emitter coupled type logical circuit transistor (TR), by providing a TR whose base is connected to the emitter coupling section of the emitter coupling type logical circuit TR and whose emitter is connected to the base of the emitter coupled logical circuit TR via a resistor. CONSTITUTION:The emitter coupled logical circuit is constituted by connecting emitters of the TRs Q1, Q2 mutually, the emitter of a TRQ3 of emitter follower operation is connected to the base of the TRQ1, and an input signal is applied to the base of a TRQ3 via a resistor RB. Further, a reference voltage VR is applied to the base of the TRQ2. Moreover, the base of the TRQ4 is connected to the emitter coupling section of the TRs Q1, Q2 and the emitter of the TRQ4 is connected to the base of the TRQ1 via a resistor R'E. An emitter-base voltage of the TRQ1 when an input terminal IN in short-circuited with a power supply voltage VEE', is decreased with the emitter-base voltage of the TRQ4, allowing to use a high performance TR having low emitter-base dielectric voltage without breaking down the emitter and the base.

Description

【発明の詳細な説明】 本発明は論理回路に関し、特にエミッタ結合型論理回路
に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to logic circuits, and more particularly to emitter-coupled logic circuits.

従来よ’)s第1図に示・すエミッタホロワ入力を持つ
エミッタ結合型論理回路(以下Eelと略す)がイ重々
の1cKit’用されている。この様なECLl路にお
いて通常の論理動作時はIN端子に高レベル()iig
h−Level ) −〇、 9 V を低しベ/I/
 (LIOW −Level) −1,7Vの電圧が加
えられる。今トランジスタのベース:エミッタ間順方向
電圧VBEを0.8Vとするとこの様な正規の論理レベ
ルでの動作時には基準4圧VRとして通常−2,1V程
度の電位がえらばれるので、見1eQsのベース:エミ
ッタ間は逆バイアスになる事はない。
Conventionally, an emitter-coupled logic circuit (hereinafter abbreviated as Eel) having an emitter follower input as shown in FIG. 1 has been used extensively in 1cKit's. During normal logic operation in such an ECL1 path, a high level ()iig is applied to the IN terminal.
h-Level) -〇, 9 Lower V/I/
(LIOW -Level) A voltage of -1.7V is applied. Now, if the forward voltage VBE between the base and emitter of the transistor is 0.8V, when operating at such a normal logic level, a potential of about -2.1V is usually selected as the reference 4-voltage VR, so the base of 1eQs : There is no reverse bias between the emitters.

しかし、一般によく行なわれる様に、使用しない入力端
子がある場合には、入力端子はオーブンかあるいは′電
源端子(VICI )とショートして使用される。
However, as is common practice, if there is an input terminal that is not used, the input terminal is used by shorting it to the oven or the power supply terminal (VICI).

この様な1吏用状態になったとき、Qxのエミッタ:ベ
ース間4圧は次の様になる。すなわちQlのエミッタ電
位はVBが−2,lVであるのでQ1ノVnlOO,8
V t 加L チー 2.9 V トfx り s見1
のベースはRIBを介してVEEと同′ル位となる。こ
れよジQ1のエミッタ;ベース間′峨圧はlVggl−
12,9V l’5.2V−2゜9V=2.3VKなる
。通常VKIはさらに±0.5 V程度変動する事を考
えるとQ1ノx ミッタ:ベース間゛電圧は2.8Va
度まで印加される事になる。
When such a single-use state occurs, the four pressures between the emitter and the base of Qx are as follows. In other words, since VB is -2,1V, the emitter potential of Ql is Q1's VnlOO,8
V t + L Chi 2.9 V Tofx Ri s look 1
The base of is at the same level as VEE via RIB. This is the emitter of Q1; the pressure between the base is lVggl-
12.9V l'5.2V - 2°9V = 2.3VK. Considering that VKI normally fluctuates by about ±0.5 V, the voltage between Q1 and the transmitter and base is 2.8 Va.
It will be applied up to a certain degree.

ところで最近の著しい半導体技術の進歩によってバイポ
ーラトランジスタのカットオフ周波数fTは5 (3)
i z−10(jHz程度のものが実用化されつつあり
、この様な高性能のトランジスタにおいてはエミッタ;
ベース間の耐圧が2v〜3■となっている。この様な素
子を使用した場合、第1図の回路例においてもし入力端
子がVimK4ちた場合には先述の様にQlのエミッタ
二ベース間には〜2.8■の逆バイアスがかかり、工?
 ツタ゛:ベース接合がブレークダウンするt:で次の
様な電流Pathが生じ、回路上異常な動作レベルが生
じる。すなわちQlのエミッタ:ベースがブレークダウ
ンした結果、電流はRC−+Q 1→Qtのエミッタ:
ベース接合→kLEなる通路で流れるのでaCに定1流
l以外の電流が流れてしまう。
By the way, due to recent remarkable advances in semiconductor technology, the cutoff frequency fT of bipolar transistors has increased to 5 (3)
Iz-10(jHz) are being put into practical use, and in such high-performance transistors, the emitter;
The withstand voltage between the bases is 2V to 3■. When using such an element, in the circuit example shown in Figure 1, if the input terminal is connected to VimK4, a reverse bias of ~2.8μ will be applied between the emitter and base of Ql as described above, and the ?
The following current Path occurs at t: where the base junction breaks down, resulting in an abnormal operating level on the circuit. That is, the emitter of Ql: As a result of the base breakdown, the current is RC- + Q 1 → Emitter of Qt:
Since the current flows through the path from base junction to kLE, a current other than the constant current 1 flows through aC.

本発明はこの様なエミッタ:ベース耐圧の低い高性能ト
ランジスタを、エミ′ツタ:ベースをブレークダウンさ
せないで使用できる回路を提供するものである。
The present invention provides a circuit that can use such a high performance transistor with low emitter:base breakdown voltage without causing emitter:base breakdown.

本発明による論理回路は、互いにエミッタが結合されエ
ミッタ結合iJ、論理回路を構成する第1と第2のトラ
ンジスタと、ベースに外部信号を受は工εツタは該第1
のトランジスタのベースにff1t2されエミッタホロ
ワ動作する第3のトランジスタと、該第2のトランジス
タのベースに接続される基準(圧を発生する回路と、よ
り構成される論理回路において、べ一虫1が該第l・第
2のトランジスタのエミッタ結合部に接続されエミッタ
抵抗を介して該第1のトランジスタのベースに接続され
た@4のトランジスタを設けたことを特徴とする。
The logic circuit according to the present invention includes first and second transistors whose emitters are coupled to each other, the emitter-coupled iJ, which constitutes the logic circuit, and whose base receives an external signal.
In a logic circuit consisting of a third transistor that is connected to the base of the transistor ff1t2 and operates as an emitter follower, and a reference (pressure generating circuit) connected to the base of the second transistor, the beetle 1 is connected to the base of the transistor. The present invention is characterized in that a @4 transistor is provided which is connected to the emitter coupling portions of the first and second transistors and connected to the base of the first transistor via an emitter resistor.

この様な本発明によればエミッタ二ベース間に加わる′
成田を著しく減少できるものである。
According to the present invention, the voltage applied between the emitter and the base is
Narita can be significantly reduced.

第2図は本発明による実施例である。第1図の説明と同
様入力端子INがvg菖とショートした場合のQlのエ
ミッタ:ベース間電圧を計算すると、今Rg=七’Ql
@Q4のベース:エミッタ間電圧を0.8vとして VEBQI = (l Viegl −(1VRI+2
X0.8V ) )=0.75+0.8=1.55V となり、これは第1図の従来例の場合に印加される先述
の2.3vよ、り 0.75 V低くなっている。
FIG. 2 shows an embodiment according to the invention. Similar to the explanation in Figure 1, if the input terminal IN is shorted to the vg iris, calculate the emitter:base voltage of Ql, and now Rg = 7'Ql
@VEBQI = (l Viegl - (1VRI+2
X0.8V))=0.75+0.8=1.55V, which is 0.75V lower than the aforementioned 2.3V applied in the conventional example shown in FIG.

ただし第2図の実施例においてはQsのエミッタ:ベー
ス間゛亀庄も考慮する必要がある。Qlと同様の計4を
Qsについて行なうと =(5,z−(2,、t+z)xo、s ) )x−=
0.75Vとなるので、問題がない。
However, in the embodiment shown in FIG. 2, it is also necessary to consider the emitter-base distance of Qs. If we perform the same total of 4 for Qs as for Ql, we get = (5, z - (2,, t + z) xo, s ) ) x - =
Since it is 0.75V, there is no problem.

第3図は本発明の別の実施例である。この例ではQ4の
ベースがVnに接続されて−る場合である。詳細な計、
11.は@2図、と同様であるので省略するが、この場
合はRmとkLyr、’の比を適切に選ぶ事でQt−Q
sのエミ、り:ベース間の並ノくイアス醒圧を1v〜1
.5 V程度に處ぶ事ができる。
FIG. 3 shows another embodiment of the invention. In this example, the base of Q4 is connected to Vn. detailed total,
11. is the same as Figure @2, so it will be omitted, but in this case, by appropriately selecting the ratio of Rm and kLyr,', Qt-Q
S's emitter, ri: The normal air pressure between the bases is 1v~1
.. It can be applied to about 5 V.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来のECL論理回路例を示す。第2図は本発
明の実施例を示す。第3図は本発明の他の実施例を示す
図である。 Q1〜見4・・・・・・トランジスタ。
FIG. 1 shows an example of a conventional ECL logic circuit. FIG. 2 shows an embodiment of the invention. FIG. 3 is a diagram showing another embodiment of the present invention. Q1~See 4...Transistor.

Claims (2)

【特許請求の範囲】[Claims] (1)  互いに工t yりが結合されエミッタ結合i
J1論理回路を構成する第1と第2のトランジスタと、
ベースに外部信号を受はエミッタは該第1のトランジス
タのベースに接続されエミッタホロワ動作する第3のト
ランジスタと、該第2のトランジスタのベースに基準磁
圧を印加する回路と、より構成される倫理回路において
ベースが該第1、第2のトランジスタのニオシタ結傘部
に接続されエミッタは抵抗を介して該第1のトランジス
タのベースに接続された第4のトランジスタを有−する
ことを特徴とするt@埋回路。
(1) Emitter coupling i
first and second transistors forming a J1 logic circuit;
A third transistor whose base receives an external signal and whose emitter is connected to the base of the first transistor and operates as an emitter follower, and a circuit that applies a reference magnetic pressure to the base of the second transistor. The circuit is characterized in that the fourth transistor has a base connected to the nioscillator portions of the first and second transistors and an emitter connected to the base of the first transistor via a resistor. t@buried circuit.
(2)  M求範囲lに記載の半導体論理回路において
。 該第4のトランジスタのベースが該第2のトランジスタ
のベースに接続されていることを特徴とする特許請求の
範囲第1項に記載の論理回路。
(2) In the semiconductor logic circuit described in M range l. 2. The logic circuit according to claim 1, wherein the base of the fourth transistor is connected to the base of the second transistor.
JP57090609A 1982-05-28 1982-05-28 Logical circuit Granted JPS58207722A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57090609A JPS58207722A (en) 1982-05-28 1982-05-28 Logical circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57090609A JPS58207722A (en) 1982-05-28 1982-05-28 Logical circuit

Publications (2)

Publication Number Publication Date
JPS58207722A true JPS58207722A (en) 1983-12-03
JPH0261819B2 JPH0261819B2 (en) 1990-12-21

Family

ID=14003214

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57090609A Granted JPS58207722A (en) 1982-05-28 1982-05-28 Logical circuit

Country Status (1)

Country Link
JP (1) JPS58207722A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0224216A2 (en) * 1985-11-22 1987-06-03 Nec Corporation An emitter coupled logic circuit

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58175856A (en) * 1982-04-07 1983-10-15 Mitsubishi Electric Corp Semiconductor integrated circuit device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58175856A (en) * 1982-04-07 1983-10-15 Mitsubishi Electric Corp Semiconductor integrated circuit device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0224216A2 (en) * 1985-11-22 1987-06-03 Nec Corporation An emitter coupled logic circuit

Also Published As

Publication number Publication date
JPH0261819B2 (en) 1990-12-21

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