JPS58206135A - Ｍｏｓ型ダイオ−ドの界面における少数キヤリアトラツプ準位測定方法 - Google Patents

Ｍｏｓ型ダイオ−ドの界面における少数キヤリアトラツプ準位測定方法

Info

Publication number
JPS58206135A
JPS58206135A JP57088739A JP8873982A JPS58206135A JP S58206135 A JPS58206135 A JP S58206135A JP 57088739 A JP57088739 A JP 57088739A JP 8873982 A JP8873982 A JP 8873982A JP S58206135 A JPS58206135 A JP S58206135A
Authority
JP
Japan
Prior art keywords
type diode
signal
small number
carriers
change
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57088739A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0115141B2 (OSRAM
Inventor
Akira Usami
宇佐美　晶
Yutaka Tokuda
徳田　豊
Satoshi Kaneshima
金嶋　聡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SPC Electronics Corp
Shimada Rika Kogyo KK
Original Assignee
SPC Electronics Corp
Shimada Rika Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SPC Electronics Corp, Shimada Rika Kogyo KK filed Critical SPC Electronics Corp
Priority to JP57088739A priority Critical patent/JPS58206135A/ja
Publication of JPS58206135A publication Critical patent/JPS58206135A/ja
Publication of JPH0115141B2 publication Critical patent/JPH0115141B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P74/00—

Landscapes

  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP57088739A 1982-05-27 1982-05-27 Ｍｏｓ型ダイオ−ドの界面における少数キヤリアトラツプ準位測定方法 Granted JPS58206135A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57088739A JPS58206135A (ja) 1982-05-27 1982-05-27 Ｍｏｓ型ダイオ−ドの界面における少数キヤリアトラツプ準位測定方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57088739A JPS58206135A (ja) 1982-05-27 1982-05-27 Ｍｏｓ型ダイオ−ドの界面における少数キヤリアトラツプ準位測定方法

Publications (2)

Publication Number Publication Date
JPS58206135A true JPS58206135A (ja) 1983-12-01
JPH0115141B2 JPH0115141B2 (OSRAM) 1989-03-15

Family

ID=13951284

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57088739A Granted JPS58206135A (ja) 1982-05-27 1982-05-27 Ｍｏｓ型ダイオ−ドの界面における少数キヤリアトラツプ準位測定方法

Country Status (1)

Country Link
JP (1) JPS58206135A (OSRAM)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5922337A (ja) * 1982-07-28 1984-02-04 Fujitsu Ltd 界面電気伝導評価方法
JP2008014668A (ja) * 2006-07-03 2008-01-24 Toyota Central Res & Dev Lab Inc 有機材料の評価装置及び評価方法
JP2015040816A (ja) * 2013-08-23 2015-03-02 株式会社Ｓｃｒｅｅｎホールディングス 検査装置および検査方法
JP2021197452A (ja) * 2020-06-15 2021-12-27 信越半導体株式会社 シリコン試料中の酸素濃度測定方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5922337A (ja) * 1982-07-28 1984-02-04 Fujitsu Ltd 界面電気伝導評価方法
JP2008014668A (ja) * 2006-07-03 2008-01-24 Toyota Central Res & Dev Lab Inc 有機材料の評価装置及び評価方法
JP2015040816A (ja) * 2013-08-23 2015-03-02 株式会社Ｓｃｒｅｅｎホールディングス 検査装置および検査方法
JP2021197452A (ja) * 2020-06-15 2021-12-27 信越半導体株式会社 シリコン試料中の酸素濃度測定方法

Also Published As

Publication number Publication date
JPH0115141B2 (OSRAM) 1989-03-15

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