JPS58206133A - キヤリヤ寿命測定装置 - Google Patents
キヤリヤ寿命測定装置Info
- Publication number
- JPS58206133A JPS58206133A JP8794482A JP8794482A JPS58206133A JP S58206133 A JPS58206133 A JP S58206133A JP 8794482 A JP8794482 A JP 8794482A JP 8794482 A JP8794482 A JP 8794482A JP S58206133 A JPS58206133 A JP S58206133A
- Authority
- JP
- Japan
- Prior art keywords
- junction
- photon beam
- carrier
- photocurrent
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/265—Contactless testing
- G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8794482A JPS58206133A (ja) | 1982-05-26 | 1982-05-26 | キヤリヤ寿命測定装置 |
US06/432,805 US4563642A (en) | 1981-10-09 | 1982-10-05 | Apparatus for nondestructively measuring characteristics of a semiconductor wafer with a junction |
DE8282109245T DE3271027D1 (en) | 1981-10-09 | 1982-10-06 | Apparatus for nondestructively measuring characteristics of a semiconductor wafer having a junction |
EP82109245A EP0077021B1 (en) | 1981-10-09 | 1982-10-06 | Apparatus for nondestructively measuring characteristics of a semiconductor wafer having a junction |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8794482A JPS58206133A (ja) | 1982-05-26 | 1982-05-26 | キヤリヤ寿命測定装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58206133A true JPS58206133A (ja) | 1983-12-01 |
JPH0422019B2 JPH0422019B2 (enrdf_load_stackoverflow) | 1992-04-15 |
Family
ID=13928996
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8794482A Granted JPS58206133A (ja) | 1981-10-09 | 1982-05-26 | キヤリヤ寿命測定装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58206133A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002083851A (ja) * | 2000-09-08 | 2002-03-22 | Mitsubishi Materials Silicon Corp | 半導体基板の品質評価方法及びその品質評価装置 |
US7663385B2 (en) * | 2002-12-13 | 2010-02-16 | Nanometrics Incorporated | Apparatus and method for electrical characterization by selecting and adjusting the light for a target depth of a semiconductor |
-
1982
- 1982-05-26 JP JP8794482A patent/JPS58206133A/ja active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002083851A (ja) * | 2000-09-08 | 2002-03-22 | Mitsubishi Materials Silicon Corp | 半導体基板の品質評価方法及びその品質評価装置 |
US7663385B2 (en) * | 2002-12-13 | 2010-02-16 | Nanometrics Incorporated | Apparatus and method for electrical characterization by selecting and adjusting the light for a target depth of a semiconductor |
US8232817B2 (en) | 2002-12-13 | 2012-07-31 | Nanometrics Incorporated | Apparatus and method for electrical characterization by selecting and adjusting the light for a target depth of a semiconductor |
US9110127B2 (en) | 2002-12-13 | 2015-08-18 | Nanometrics Incorporated | Apparatus and method for electrical characterization by selecting and adjusting the light for a target depth of a semiconductor |
Also Published As
Publication number | Publication date |
---|---|
JPH0422019B2 (enrdf_load_stackoverflow) | 1992-04-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0077021B1 (en) | Apparatus for nondestructively measuring characteristics of a semiconductor wafer having a junction | |
CN1132015C (zh) | 半导体器件少子扩散长度和少子寿命的无损测量方法 | |
US4949034A (en) | Method for contactless evaluation of characteristics of semiconductor wafers and devices | |
US4456879A (en) | Method and apparatus for determining the doping profile in epitaxial layers of semiconductors | |
US9110127B2 (en) | Apparatus and method for electrical characterization by selecting and adjusting the light for a target depth of a semiconductor | |
JPS61225830A (ja) | 集積回路チツプの試験方法 | |
JPS58206133A (ja) | キヤリヤ寿命測定装置 | |
JP2937557B2 (ja) | 拡散層深さ測定装置 | |
US3039056A (en) | Testing of semiconductors | |
JP3650917B2 (ja) | 表面光電圧による半導体表面評価方法及び装置 | |
EP0526734A2 (en) | Noncontact probe and active matrix array inspection apparatus using the same | |
JPH03132052A (ja) | Mis界面評価法及び装置 | |
JPH11118887A (ja) | 定電流型ビーム照射加熱抵抗変化測定装置 | |
JPH0544187B2 (enrdf_load_stackoverflow) | ||
Carver et al. | Mapping of electrically active defects in silicon by optical-beam-induced reflectance | |
JPH09211084A (ja) | 半導体装置の検査方法および検査装置 | |
JPH0115141B2 (enrdf_load_stackoverflow) | ||
JPH0774943B2 (ja) | アクテイブマトリツクスアレイの検査方法 | |
JP2002243619A (ja) | 走査光電気化学顕微鏡 | |
JP2005108984A (ja) | 半導体装置の検査方法および半導体装置の製造方法 | |
JPS5940548A (ja) | 半導体集積回路におけるプログラミング方法 | |
JPS59178742A (ja) | 半導体受光素子の特性測定方法 | |
Yamashita et al. | Non-contact measurement of MOSFET with zero bias voltage using the laser-THz emission microscope | |
JP2011089846A (ja) | 静電解析方法及び静電解析装置 | |
Škarvada et al. | SEM and AFM imaging of solar cells defects |