JPH0422019B2 - - Google Patents
Info
- Publication number
- JPH0422019B2 JPH0422019B2 JP8794482A JP8794482A JPH0422019B2 JP H0422019 B2 JPH0422019 B2 JP H0422019B2 JP 8794482 A JP8794482 A JP 8794482A JP 8794482 A JP8794482 A JP 8794482A JP H0422019 B2 JPH0422019 B2 JP H0422019B2
- Authority
- JP
- Japan
- Prior art keywords
- junction
- photocurrent
- carrier
- photon beam
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 16
- 238000010168 coupling process Methods 0.000 claims description 5
- 230000008878 coupling Effects 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 description 28
- 235000012431 wafers Nutrition 0.000 description 23
- 239000002184 metal Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 7
- 238000005259 measurement Methods 0.000 description 6
- 238000000691 measurement method Methods 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000006378 damage Effects 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005202 decontamination Methods 0.000 description 1
- 230000003588 decontaminative effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/265—Contactless testing
- G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8794482A JPS58206133A (ja) | 1982-05-26 | 1982-05-26 | キヤリヤ寿命測定装置 |
| US06/432,805 US4563642A (en) | 1981-10-09 | 1982-10-05 | Apparatus for nondestructively measuring characteristics of a semiconductor wafer with a junction |
| DE8282109245T DE3271027D1 (en) | 1981-10-09 | 1982-10-06 | Apparatus for nondestructively measuring characteristics of a semiconductor wafer having a junction |
| EP82109245A EP0077021B1 (en) | 1981-10-09 | 1982-10-06 | Apparatus for nondestructively measuring characteristics of a semiconductor wafer having a junction |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8794482A JPS58206133A (ja) | 1982-05-26 | 1982-05-26 | キヤリヤ寿命測定装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58206133A JPS58206133A (ja) | 1983-12-01 |
| JPH0422019B2 true JPH0422019B2 (enrdf_load_stackoverflow) | 1992-04-15 |
Family
ID=13928996
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8794482A Granted JPS58206133A (ja) | 1981-10-09 | 1982-05-26 | キヤリヤ寿命測定装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58206133A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3687509B2 (ja) * | 2000-09-08 | 2005-08-24 | 三菱住友シリコン株式会社 | シリコン基板の品質評価方法及びその品質評価装置 |
| US7663385B2 (en) * | 2002-12-13 | 2010-02-16 | Nanometrics Incorporated | Apparatus and method for electrical characterization by selecting and adjusting the light for a target depth of a semiconductor |
-
1982
- 1982-05-26 JP JP8794482A patent/JPS58206133A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58206133A (ja) | 1983-12-01 |
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