JPS58204168A - Electroless plating bath of rhodium or rhodium alloy - Google Patents

Electroless plating bath of rhodium or rhodium alloy

Info

Publication number
JPS58204168A
JPS58204168A JP8553582A JP8553582A JPS58204168A JP S58204168 A JPS58204168 A JP S58204168A JP 8553582 A JP8553582 A JP 8553582A JP 8553582 A JP8553582 A JP 8553582A JP S58204168 A JPS58204168 A JP S58204168A
Authority
JP
Japan
Prior art keywords
rhodium
salt
bath
solution
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8553582A
Other languages
Japanese (ja)
Other versions
JPS5939504B2 (en
Inventor
Eiichi Torikai
鳥養 栄一
Yoji Kawami
川見 洋二
Hiroyasu Takenaka
竹中 啓恭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP8553582A priority Critical patent/JPS5939504B2/en
Publication of JPS58204168A publication Critical patent/JPS58204168A/en
Publication of JPS5939504B2 publication Critical patent/JPS5939504B2/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31Coating with metals
    • C23C18/42Coating with noble metals
    • C23C18/44Coating with noble metals using reducing agents

Abstract

PURPOSE:To provide a titled plating bath which has high stability, offers a high utilizing rate of metal, and is high in plating speed by using rhodium or the other metal as ammine complex salt together with rhodium and contg. hydroxyl amine salt and hydrazine therein. CONSTITUTION:Ammine complex salt of rhodium or a mixture thereof and the other ammine complex salt, hydroxyl amine salt as a stabilizer and hydrazine as a reducing agent are incorporated and the pH thereof is controlled to 10-13, whereby an electroless plating bath of rhodium or a rhodium alloy is obtained. Rhodium salt or hexaammine salt or the like obtd. by causing the mixture of said salt and the salt of the other metal such as platinum to react with ammonia is preferable as the ammine complex salt. Water-soluble hydrochloride or the like is preferable as the hydroxyl amine salt and hydrazine hydrate or the like which forms hydrazine in the state of an aq. soln. is preferably usable for the hydrazine.

Description

【発明の詳細な説明】 本発明は金属または非金属表面に0ジウムまたは0.;
ラム合金を無電解メツ士するためのヒドラジシ型メツ生
温に関し、特に浴液の安定性が優れ、0ジウムまたはロ
ジウム合金の利用率が高く且っメツ士速度が速い新規な
メツ生温に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention provides a metal or non-metal surface with 0 dium or 0 . ;
The present invention relates to a hydrazishi-type raw temperature for electroless metallurgy of ram alloys, and in particular to a novel raw temperature for metallurgy that has excellent stability of the bath liquid, high utilization rate of 0 dium or rhodium alloys, and high metallization speed.

一般に、0.;ラムまたは0.;ラム合金の化学メツ士
は、それらの金属塩とエチレンジアミシ(ア三シ錯塩を
形成する)、アシモニア等の混合溶液に還元剤としてヒ
ドラ、;シ、水素化ホウ素ナトリウムあるいはアル士ル
ア三シボ5シ等を加えたものが使用される。しかし、上
記の組成のままでは浴液中のア三シ錯塩の安定性が悪く
、0.;ラム又はロジウム合金の還元が進みすぎて浴中
に析欣即ち自己分解)してしまうので、反応抑制のため
の安定化剤を加えるのが普通であるが、現在のところ安
定化剤を加えた場合にも、なお充分な安定性を有する浴
液は得られていない。
Generally, 0. ;Rum or 0. ; Lamb alloy chemists add hydra, sodium borohydride, or alkaline chloride as a reducing agent to a mixed solution of these metal salts and ethylene diamic acid (which forms a complex salt), asimonia, etc. A material with 5 grains added is used. However, if the above composition remains as it is, the stability of the atricide complex salt in the bath liquid is poor, and 0. ; Because the reduction of rhum or rhodium alloy progresses too much and precipitates in the bath (i.e. self-decomposes), it is normal to add a stabilizer to suppress the reaction; Even in these cases, a bath liquid with sufficient stability has not yet been obtained.

一方、実用的見地から見ると、O,;ラム自体が高価な
ため、浴液中での自己分解が少ないことの他に金属塩か
らの析出率の高いことが望ましい。
On the other hand, from a practical point of view, since O,; ram itself is expensive, it is desirable that the rate of precipitation from metal salts is high, in addition to low self-decomposition in the bath liquid.

すなわち、1バツチ毎のメツ士操作で、含有口、;ラム
がほとんど完全に利用されるのが理想である。
In other words, it is ideal that the ram is almost completely utilized in each batch.

さらに操業性の立場から見ると、析出時間が速いことが
望ましい。
Furthermore, from the standpoint of operability, it is desirable that the precipitation time be fast.

本発明者らは、上記の要求、すなわち、■浴液の安定性
、■0.;ウム利用率、及び■メツ士速度を考慮して公
知のメツ中法を追試したところ、満足し得る浴液は全く
見出せなかった。
The present inventors have met the above requirements: (1) Stability of bath liquid; (2) 0. When the known bathing method was retried taking into consideration the utilization rate of liquid and bathing speed, no satisfactory bath liquid could be found.

すなわち、安定化剤を使用しているにもかかわらず還元
剤に水素化ホウ素塩を使用する浴では■、■が悪く、ア
ル士ルアミシボラシを用いる浴液では■及び■が悪い。
That is, despite the use of a stabilizer, a bath using a borohydride salt as a reducing agent has poor results (1) and (2), and a bath solution using alkyl amicide borax has poor results (2) and (2).

ヒドラ!;シ浴は■が不安定であった。しかし、前二者
は、浴液組成を種々に変えて試みた場合にも改良の余地
はないのに対し、ヒドラジシ浴は、浴液の改良で■の改
善が期待できることが見出された。
Hydra! ; As for the bath, ■ was unstable. However, in the former two, there is no room for improvement even when various bath liquid compositions are tried, whereas in the case of the hydrazide bath, it has been found that improvements in (1) can be expected by improving the bath liquid.

0、;ラムの化学メ゛ν+・にヒドラ、;シを還元剤に
使用する方法は、いずれも0ジウム塩化物または硫酸塩
、エチレシジアミシ、水酸化ナトリウムからなる溶液を
用い、還元剤としてしドラジシ塩を単独または水素化ホ
ウ素塩と併用し、さらに安定化剤としてフェロジアジ化
カリウム(ケミカルアブストラクト86巻、94262
n)、ジメチルクリオ牛シム(ケミカルアブストラクト
86巻、46520y、同87巻、271547Fり等
が使用されている。
Both methods using hydra and hydra as reducing agents for 0,;ram's chemical method use a solution consisting of 0dium chloride or sulfate, ethyrecidiamic acid, and sodium hydroxide. salt alone or in combination with a borohydride salt, and potassium ferrodiazide (Chemical Abstracts Vol. 86, 94262) as a stabilizer.
n), dimethyl cryo-cow sim (Chemical Abstracts Vol. 86, 46520y, Vol. 87, 271547F), etc. are used.

しかし、実際に、これら公知の浴液およびメツ士条件で
金属、プラスチックあるいはイオシ交換膜等の表面にロ
ジウムを成長させた場合、前記■、■及び■の何れかが
不充分であシ満足し得るものはなかった。また、基本浴
に存在するエチレシジアミンそのものも、イオシ交換膜
に触媒電極を接合させる目的で行うロジウムメツ士の場
合には、膜の汚染をまねくために使用できない。
However, when rhodium is actually grown on the surface of metals, plastics, sulfur exchange membranes, etc. using these known bath solutions and methane conditions, any of the above items (1), (2), and (2) are insufficient and are not satisfied. There was nothing to gain. In addition, ethylene diamine itself, which is present in the basic bath, cannot be used in the case of rhodium bonding for the purpose of bonding a catalyst electrode to an sulfur exchange membrane because it causes contamination of the membrane.

本発明者は、しドラジル型メツ+浴において、前記■、
■及び■のいずれにも優れたメツ士浴を得るため試薬及
び共存安定化剤を精力的に検討した結果、0.;ラムま
たは接合せんとする合金組成の金属類をアシ三シ錯塩溶
液として用い、かつ安定化剤としてヒト0士シルア、:
′J塩を使用した場合には、所期の目的を満足し得るこ
とを見出し本発明を完成した。
The present inventor has proposed the above-mentioned ■,
As a result of intensive investigation of reagents and coexisting stabilizers in order to obtain a Metsushi bath that was excellent in both (1) and (2), we found that 0. ;Using the metals of the alloy composition to be bonded or bonded as a tricythic complex salt solution, and human silica as a stabilizer:
The present invention was completed based on the discovery that the intended purpose could be achieved when J salt was used.

即ち本発明は、体)0.;ラムのア、7ミシ錯塩又はこ
れと他の金属のアシミシ錯塩との混合物、(h)ヒト0
+シルア三シ塩、及び(c)ヒドラジシを含有し、PH
IO〜13であることを特徴とする。、;ラム又は0.
;ラム合金の無電解メツ生温に係る。
That is, the present invention is directed to a body) 0. ; Lamb's A, 7-misi complex salt or a mixture of this and other metal amici complex salts, (h) human 0
+ silua trisulfate, and (c) hydrazisyl, and the PH
It is characterized by being IO~13. ,;ram or 0.
;Relates to the electroless raw temperature of ram alloy.

本発明における0、1;ラムアシ三シ錯塩としては、例
えば0ジウム塩をアシモニア、水と共にオートクレーブ
に入れ、lO〜30Kg/cII!の圧力、120〜1
60℃の温度で3〜12時間反応させて得られるへ+サ
アシミシ塩〔Rh(NH3)6〕x3(Xはハ0ゲシ、
NO2等)を使用するのが好ましいが、ロジウム塩をア
シ七ニア水と共に溶液が淡黄色になるまでア、7七ニア
水を追加しながら煮沸して得られる溶液を使用すること
も出来る。
As the 0, 1; lamb reed trisic complex salt in the present invention, for example, 0 dium salt is put into an autoclave together with asimonia and water, and the 0, 1; pressure, 120-1
He + Saashimishi salt [Rh(NH3)6]x3 (X is H0geshi,
Although it is preferable to use a solution obtained by boiling a rhodium salt with acetic acid water while adding acetic acid water until the solution becomes pale yellow, it is also possible to use a solution obtained by boiling the rhodium salt with acetic acid water and adding acetic acid water until the solution becomes pale yellow.

0ジウム合金をメツ牛する場合には、0ジウムと白金、
ルテニウム、イリジウム、ニッケル、コバルト等の塩類
との混合塩類を同様に加圧下の熱アシモニア水で処理し
、安定な混合ア、7三シ塩錯体溶液として使用するのが
好ましい。その際、ロジウムに対して添加される金属の
モル比は、ロジウムl七ルに対して0.1乃至1.0七
ルの割合であり、三元素以上の場答も、Oジウム1モル
に対して添加金属の合計モル数が1七ル以下で行なわれ
るのが好ましい。三元素の場合の例を示せば、例えば0
ジウム1モルに対して白金又はイリジウムの場合忙は0
.1〜0.5七ル、ルテニウム、ニッケル又はコバルト
の場合0.1−1モルであるのが好ましい。
When combining 0dium alloy, 0dium and platinum,
Preferably, mixed salts with salts of ruthenium, iridium, nickel, cobalt, etc. are similarly treated with hot asimonia water under pressure and used as a stable mixed a,7 trisalt complex solution. At this time, the molar ratio of the metal added to rhodium is 0.1 to 1.07 mol to 1 mol of rhodium, and the molar ratio of metal added to 1 mol of rhodium is 0.1 to 1.07 mol. On the other hand, it is preferable that the total number of moles of added metals is 17 or less. To give an example of three elements, for example, 0
If platinum or iridium is used for 1 mole of dium, the ratio is 0.
.. In the case of ruthenium, nickel or cobalt, it is preferably 0.1-1 mol.

本発明において使用するしド0士シルアミシ塩としては
、水溶性の塩例えば塩酸塩、硫酸塩、硝酸塩等が好まし
い。
As the salt used in the present invention, water-soluble salts such as hydrochloride, sulfate, nitrate, etc. are preferable.

物、塩酸塩、硫酸塩等が好適に使用できる。Hydrochlorides, sulfates, etc. can be suitably used.

本発明の浴液組成としては、アシミシ錯塩をロジウム又
は0ジウム合金として0.001−0.I N/t(0
ジウムの場合o、t−tof/z)好ましくは0.00
1〜0.05M/l(0ジウムの場合0.1〜5f/l
)、ヒトO+シルアミシを0.003〜1.5&/4(
0,1〜50 f/l )好ましくは0.003〜0.
15 M/l (0,1〜52)及びヒドラ!;シを0
.003〜1.5M/lcヒドラジシー水和物の場合1
〜5 Q t/l )好ましくは0.003〜0.3M
/l(ヒドラジシー水和物の場合1−10t/l)であ
る。本発明においては上記組成の浴液を、アシ七ニア水
又はアルカリ性pH緩衝液により、pH1O〜13好ま
しくは11〜12の範囲に調製して使用する。
The composition of the bath liquid of the present invention is 0.001-0.001 by using rhodium or a zero-dium alloy as the asimici complex salt. I N/t(0
o, t-tof/z) for dium) preferably 0.00
1 to 0.05 M/l (0.1 to 5 f/l for 0 dium
), human O+cilamici from 0.003 to 1.5 &/4 (
0.1-50 f/l) preferably 0.003-0.
15 M/l (0,1-52) and Hydra! ;Shi is 0
.. 003-1.5M/lc In the case of hydrazide hydrate 1
~5 Qt/l) preferably 0.003 to 0.3M
/l (1-10 t/l in case of hydrazide hydrate). In the present invention, the bath solution having the above composition is adjusted to have a pH in the range of 10 to 13, preferably 11 to 12, using aqueous acetate or an alkaline pH buffer.

pHが13以上になると還元速度が速くなり自己分解が
増す、またpHがlOよυ低いと成長速度が小さくメツ
士時間が長くなる。ヒトO士シルアミシが5097を以
上になると成長を極端に抑え、メツ士は進みにくくなる
When the pH is higher than 13, the reduction rate becomes faster and self-decomposition increases, and when the pH is lower than lO, the growth rate is low and the growth time becomes long. When the Human Oshiru Shiramishi reaches 5097 or more, growth is extremely suppressed and it becomes difficult for the Metsushi to progress.

本発明のメツ平俗は、浴液中のア、7ミシ錯イ第3+ ン〔Rh(馬)6〕  がRhC1,あるいはRh2(
S04)3の水溶液あるいはアルカリ性溶液における0
、;ウムイオシ(Rル3+、(RhC16)3−1〔R
h(NH2C!4研L2)3)3十等)に比べて著しく
安定であり(ロジウム合金の場合も同様)、ヒトO士シ
ルアミシ塩が加わるとさらに安定な錯体を形成し自己分
解はほとんど抑えられる。
The method of the present invention is that the A, 7-complex A, 3+ n [Rh (Horse) 6] in the bath liquid is RhC1 or Rh2 (
S04) 0 in aqueous or alkaline solution of 3
,; Umuioshi (R3+, (RhC16)3-1 [R
h (NH2C! 4 Lab L2) 3) 30, etc.) (same goes for rhodium alloys), and when human oxygen salt is added, an even more stable complex is formed, and self-decomposition is almost suppressed. It will be done.

このため本発明メツ士浴は、被メツ+体が浸漬されない
場合には長時間にわたって自己分解することなく極めて
優れた安定性を有する。
Therefore, the medical treatment bath of the present invention has extremely excellent stability without self-decomposition over a long period of time when the body to be treated is not immersed.

被メツ士体が浸漬された時点で、接触的に還元反応を開
始し選択的にメツ士が進むが、浴液中の0ジウム又は0
ジウム合金として95チ以上という高率に消費されるま
で継続する。メツ士時間は被メツ士体の形状にもよるの
で一定ではないが、↑ 3μのメツ中層を得る場合の例を述べれば1.5〜2時
間という短時間である。
When the body to be treated is immersed, the reduction reaction starts catalytically and the membrane selectively progresses, but if 0dium or 0% is present in the bath liquid,
It continues until it is consumed at a high rate of 95 or more as a dium alloy. The time required for treatment is not constant as it depends on the shape of the body to be treated, but to give an example of obtaining a middle layer of ↑ 3μ, it is a short time of 1.5 to 2 hours.

本発明メツ生温の一例と公知ヒドラジン型メツ牛浴との
安定性の比較を第1表に示す。
Table 1 shows a comparison of the stability between an example of the lukewarm meat of the present invention and a known hydrazine type meat meat bath.

第  1  表 第1表から明らか表様に、本発明メツ平俗は浴液の安定
性及び被メツ士体への選択性が極めて優れていることが
判る。
Table 1 As is clear from Table 1, it can be seen that the present invention's medicinal fluid has extremely excellent stability of the bath solution and selectivity to the body to be treated.

本発明メツ平俗が適用できる対象としては、金属、例え
ば銅、ニッケル、鉄、それらの合金、チタシ、タシタル
等、電子部品あるいは電極等の工業材料等が挙げられる
。また、合成樹脂、ガラス、セラミックス等、通常の無
電解メツ士が可能な材質に対して適用できる。さらに本
発明メツ牛浴は、エチレシジアミシ、ジメチルクリオ士
シム等のイオシ活性物質を含有しないため、イオy交換
膜にロジウムまたは0.;ラム合金を接合する浴液とし
て特に優れて居り、近年、水溶液電解に用いられる固体
高分子電解質(イオシ交換膜)の膜面に電極を接合した
接合体を作成する技術として適用できる。
Examples of objects to which the present invention can be applied include metals such as copper, nickel, iron, alloys thereof, titanium, tashital, etc., and industrial materials such as electronic parts and electrodes. Furthermore, it can be applied to materials that can be treated with ordinary electroless metallurgy, such as synthetic resins, glass, and ceramics. Furthermore, the present invention's metsu beef bath does not contain sulfur-active substances such as ethylesidium and dimethyl chloride, so the sulfuric acid exchange membrane contains rhodium or 0.5%. ; It is particularly excellent as a bath liquid for bonding ram alloys, and in recent years, it can be applied as a technique for creating bonded bodies in which electrodes are bonded to the membrane surface of solid polymer electrolytes (iodine exchange membranes) used in aqueous electrolysis.

いずれの場合も、被メツ士体については予め活性化処理
を行っておくのが好ましい。
In either case, it is preferable to perform activation processing on the body to be treated in advance.

金属の場合は、表面を、パラジウム、白金、0じラム等
の塩溶液に浸漬し、必要ならば引続き水素化ホウ素塩水
溶液に引続き浸漬して活性化した後、本発明メツ平俗に
浸漬する。
In the case of metal, the surface is immersed in a salt solution such as palladium, platinum, or 0 dilam, and if necessary, subsequently immersed in an aqueous boron hydride salt solution for activation, and then immersed in the method of the present invention. .

高分子、ガラス、セラミックスの場合にも、通常、これ
らの表面に銅、ニッケル等の化学メツ士を行なう場合に
利用されている表面親水化、増感処理、活性化処理を行
った後、本発明メツ牛浴に浸漬する。
In the case of polymers, glass, and ceramics, the surface is usually subjected to surface hydrophilic treatment, sensitization treatment, and activation treatment, which are used when applying copper, nickel, etc., to the surface. Soak in the invention Metsu beef bath.

また、イオシ交換膜の場合は、表面粗化した後まず金属
塩(アンミシ錯塩が好ましい)溶液を吸着させ、ついで
水素化ホウ素ナトリウム溶液で還元して1〜2μの第一
層を接合した後、本発明メツ生温に浸漬して成長させる
In the case of an iodine exchange membrane, after the surface is roughened, a metal salt (preferably ammici complex salt) solution is adsorbed, and then reduced with a sodium borohydride solution to bond a 1 to 2μ first layer. The melon of the present invention is grown by immersing it in lukewarm temperature.

メツ+温度はいずれの場合も50〜90℃、好ましくは
60〜75℃で行われる。
The temperature is in each case carried out at 50-90°C, preferably 60-75°C.

メツ中厚は、あらかじめ被メツ+体の表面積から必要な
0ジウムまたは0ジウム合金の量を浴液中に存在させて
メツ+する。浴液中のロジウム又は0.;ラム合金とし
ての利用率は95チ以上という高率で、廃液中に残る少
量のO,;ラムは水素化ホウ素塩を加え沈殿させて回収
することができる。
The thickness of the bath is determined by pre-existing the amount of 0 dium or 0 dium alloy required from the surface area of the body to be treated in the bath liquid. Rhodium in the bath liquid or 0. The utilization rate as a ram alloy is as high as 95% or more, and the small amount of O, ram remaining in the waste liquid can be recovered by adding boron hydride salt to precipitate it.

本発明によるメツ中層は電気メツ+のものに比べて同等
の電気的特性、機械的強度をもつ、無電解メツ士の特徴
である複雑形状のメツ+体に、あるいは小物の電子部品
、電気接点、非磁性あるいは磁性の0ジウム合金のメツ
士に適している。
The middle layer of the present invention has electrical properties and mechanical strength equivalent to those of electroless mets+, and can be used for the complex-shaped metsu+ bodies that are characteristic of electroless mets, small electronic parts, and electrical contacts. , suitable for use with non-magnetic or magnetic zero-dium alloys.

また、工業用材料として、水溶液電解用、あるいは燃料
電池用のイオシ交換膜−電極接合体を製作する場合のメ
ツ中法として利用できる。
Further, as an industrial material, it can be used as a method for producing sulfur exchange membrane-electrode assemblies for aqueous electrolysis or fuel cells.

以下、実施例を挙げて本発明を更に具体的に説明する。Hereinafter, the present invention will be explained in more detail with reference to Examples.

実施例 、1    ′ RhCl35 fに28チNH4OH50dをカロえ、
オートクレーづ中で、20Kp/ctl、150℃で1
2時間処理した後、取シ出し、熱時濾過し、P液を濃縮
してへ士すアシ::′JO,;ウム(2)塩化物を晶出
させた。これを使用して下記の組成の本発明メツ平俗を
調製した。
Example: 1' Add 28 NH4OH50d to RhCl35f,
In autoclay, 20Kp/ctl, 1 at 150℃
After treatment for 2 hours, the solution was taken out, filtered while hot, and the P solution was concentrated to crystallize the chloride of hexafluoride::'JO,;um(2). Using this, the present invention's Metsu Heizoku having the following composition was prepared.

[RA(MI5)6〕Ct30. t2 yH20H−
HCl           0 、1 fN2入・H
2O2プ Mζ0H(28チ)           10ゴ水 
全量           100dpH11,5 ゛ 浴温     70〜80℃ 上記浴液を用い銅板上にメツ+を行った。
[RA(MI5)6]Ct30. t2 yH20H-
HCl 0, 1 fN2 included/H
2O2puMζ0H (28chi) 10go water
Total amount: 100 dpH: 11.5゛ Bath temperature: 70 to 80°C Using the above bath solution, a copper plate was coated.

試料銅板(2x4crn)をアルカリ脱脂後、塩酸(3
% )K室温で10〜20秒浸漬し、ついで54 Pd
C12(7) 2N−HC1溶液に室温30秒浸漬して
活性化した。水洗後、上記メツ士浴液に2時間浸漬して
約2μ厚の0ジウムメツ士を得た。
After degreasing sample copper plate (2x4crn) with alkali, hydrochloric acid (3
%)K for 10-20 seconds at room temperature, then 54Pd
It was activated by immersing it in a C12(7) 2N-HC1 solution at room temperature for 30 seconds. After washing with water, it was immersed in the above-mentioned methane bath solution for 2 hours to obtain a 0-dium oxide film with a thickness of about 2 μm.

浴液中または器壁への析出は見られず、処理後の浴液中
の0ジウム残量はIIIF以下で0ジウム利用率は98
チ以上であった。
No precipitation was observed in the bath liquid or on the vessel wall, and the residual amount of 0 dium in the bath liquid after treatment was less than IIIF, and the 0 dium utilization rate was 98.
It was more than 1.

実施例 2 RんCl3をNH4OHと3時間煮沸して得たアシミシ
錯イオン〔Rh(NH3)6〕  溶液を使用して下記
組成の浴液を調製した。
Example 2 A bath solution having the following composition was prepared using a solution of the complex ion [Rh(NH3)6] obtained by boiling RnCl3 with NH4OH for 3 hours.

[Rh (#773)6)  溶液 0ジウムとしテ0
.04 tm20H−HCl            
  ’  O,’5 fN2H4・H2O2,51LA
’ PH12(D緩衝液               1
0m/(0、l MlZ NaOH十0.1 MlZ 
Nα2B20)水 全量            10
0 mlP H12,0 浴温      70〜80℃ 上記溶液を用いてABS樹脂(3×3c!n試片)に0
.;ラムメツ十を行った。
[Rh (#773)6) Solution 0 dium and Te 0
.. 04 tm20H-HCl
'O,'5 fN2H4・H2O2,51LA
'PH12 (D buffer 1
0m/(0,l MlZ NaOH10.1 MlZ
Nα2B20) Water total amount 10
0 mlP H12,0 Bath temperature 70~80℃ Using the above solution, apply 0 to ABS resin (3 x 3c!n specimen).
.. ;I performed Rammetsu 10.

試料の前処理には、通常プラスチックのメツ+で行われ
る様に以下の浴液を利用した。
For sample pretreatment, the following bath solution was used, as is usually done with plastic Metsu+.

エッチシフ浴 #、So4550ml Cr0                     2
Q タH2O(全量)              t
 ooo vtエッチ:Jjは65℃、20分行い水洗
した。
Etch Schiff bath #, So4550ml Cr0 2
Q H2O (total amount) t
ooo vt etch: Jj was performed at 65° C. for 20 minutes and washed with water.

中セタリスト浴 塩化パラジウム        0.32塩化第一錫 
          15f塩酸(35clb)250
d 水 (全量)          1000d上記浴液
に30℃、3分間浸漬した。
Medium setalist bath palladium chloride 0.32 stannous chloride
15f hydrochloric acid (35clb) 250
d Water (total amount) 1000 d Immersed in the above bath solution at 30° C. for 3 minutes.

活性化浴 水素化ホウ素ナトリウム    0.51水 全量  
        1000ゴ活性化浴に室温2分間処理
した。
Activation bath Sodium borohydride 0.51 water Total amount
It was treated in a 1000g activation bath for 2 minutes at room temperature.

引続き0ジウムメツ士浴に30分浸漬し約0.5μの光
沢ある0ジウムメツ士が得られた。0ジウムメツ士浴は
、同種試料を用いて3回繰り返して使用したが、各試料
共同様な0ジウムメツ十が得られた。この間浴液は安定
しており、分解は起らなかった。
Subsequently, it was immersed in a 0-dium metal bath for 30 minutes to obtain a glossy 0-dium metal with a diameter of about 0.5μ. The 0-dium metal bath was used three times using the same type of sample, and the same 0-dium metal was obtained for each sample. During this time, the bath liquid was stable and no decomposition occurred.

実施例 3 過フッ素スルフオシ酸系のイオシ交換膜〔デュウムを接
合した。
Example 3 Extreme fluorine -sulfosic acid -type IOshaden membrane [Duum was joined.

膜の前処理は、まず、サシドづラストで粗化した後、4
N−HClで煮沸して脱イオシし、水洗した。
The membrane is pre-treated by first roughening it with Sacid Rust, and then
It was boiled with N-HCl to de-iosify and washed with water.

ついで実施例1と同様に調製した0ジウムアシ三シ錯塩
〔Rh(NH3)6〕3+溶液に浸漬(室温、5時間)
し、水洗後、アシ七ニア性のNa1311a 0.05
%溶液中、40〜60℃で還元して1〜1.5μの0ジ
ウム層を析出させた。このo、;ラム層の成長に下肥組
成の浴液を使用した。
Then, it was immersed in a solution of 0 dium acyl tricyclocomplex [Rh(NH3)6]3+ prepared in the same manner as in Example 1 (room temperature, 5 hours).
After rinsing with water, acetic Na1311a 0.05
% solution at 40-60° C. to precipitate a 1-1.5 μm O-dium layer. A bath solution with a bottom fertilizer composition was used for the growth of this o;ram layer.

〔Rh(A’#3)6)   溶液  o、;ラムとし
て  0.31NH2°H″HC1O,5r N2H4−H,,03,OWLl Nlll、OH(28%)             
IOmJ水 全量            150dp
g            11.5〜11.8浴温 
     75〜80′℃ メツ士処理は2時間行い、処理稜の0ジウム層は約5μ
厚に成長した。浴液中の分解は見られずロジウムあ利用
率は99q6であった。
[Rh(A'#3)6) Solution o, ; As ram 0.31NH2°H''HC1O,5r N2H4-H,,03,OWLl Nlll, OH (28%)
IOmJ water total amount 150dp
g 11.5-11.8 bath temperature
75-80'℃ Metsushi treatment was performed for 2 hours, and the 0dium layer on the treated edge was approximately 5μ
It grew thick. No decomposition was observed in the bath liquid, and the rhodium utilization rate was 99q6.

実施例 4 Rhct3hptct4をPi/Rh(Den比T O
,5/’1.0の割合で混合、シ、アン七ニア水と共に
オートクレーブに入れ20Ky/di、  160℃、
l0hr処理してアシミシ錯塩混合、物を作成して使用
した。
Example 4 Rhct3hptct4 was Pi/Rh (Den ratio T O
, 5/'1.0 ratio, and put it in an autoclave with anhydrous water at 20Ky/di, 160℃,
After treatment for 10 hours, a mixture of Ashimishi complex salts was prepared and used.

Pi−Rh混混合アシコシ錯塩 0ジウムとして  0
.12m20H−HCl              
    2.OfN2H4°H20”        
  4ゴNH40H(2816>          
       20rttl水 全量        
    200ゴpH11,6 ニッケル試料板(5X 5 cm )をアルカリ脱脂し
、RhCl32 f 、 HCtl 0 ml 、水金
量11の溶液を用いて活性化処理し、水洗後、上記メッ
キ浴に浸漬し70℃、2 hrメツ士処理を行った。
Pi-Rh mixed Ashikoshi complex salt 0 as 0ium 0
.. 12m20H-HCl
2. OfN2H4°H20”
4go NH40H (2816>
20rttl water total amount
A 200g pH 11.6 nickel sample plate (5 x 5 cm) was degreased with alkali and activated using a solution of RhCl32f, HCtl 0ml and water gold amount 11. After washing with water, it was immersed in the above plating bath and heated at 70°C. , 2 hr medical treatment was performed.

ニッケル表面に約3μ厚の0ジウム一白金合金が得られ
、0.;ラム及び白金の利用率は95%以上であった。
A 0-dium-platinum alloy with a thickness of about 3 μm was obtained on the nickel surface, and 0. ; The utilization rate of rum and platinum was over 95%.

(以 上) 19− 手続補正書(自発) 1、事件の表示 昭和57年特許願第85535号 2、発明の名称 ロジウム又はロジウム合金の無電解メッキ浴3、補正を
する者 事件との関係   特許出願人 住 所  東京都千代田区霞が関1丁目3番1号氏名 
(114)工業技術院長 用田裕部4、指定代理人 住 所  大阪府池田市緑丘1丁目8番31号明細書中
「発明の詳細な説明」の項 7、補正の内容 別紙添付の通り 補正の内容 1、 明細書第5頁8行〜9行 [120℃〜160℃
の温度」とあるを 「110℃〜160℃の温度」 に
訂正する。
(That's all) 19- Procedural amendment (voluntary) 1. Indication of the case Patent Application No. 85535 of 1987 2. Name of the invention Electroless plating bath for rhodium or rhodium alloy 3. Person making the amendment Relationship to the case Patent Applicant Address: 1-3-1 Kasumigaseki, Chiyoda-ku, Tokyo Name
(114) Director of the Agency of Industrial Science and Technology Hirobe Yoda 4, Designated agent address: 1-8-31 Midorigaoka, Ikeda City, Osaka Prefecture Section 7 of “Detailed Description of the Invention” in the specification Contents of the amendments Contents of the amendments as attached in the attached sheet 1. Specification, page 5, lines 8 to 9 [120℃ to 160℃
Correct the text "Temperature of 110℃ to 160℃".

2、 明細書第5頁10行〜11行 「ヘキサアンミン
塩[Rh(NH3)a ) X3(Xはハロゲン、No
2等)」 とあるを「ヘキサアンミン塩(Rh(NH3
)6 ) X3 vまたはペンタアンミン塩(Rh(N
H3)S X) Xe  (Xはハロゲン、No2等)
」に訂正する。
2. Specification page 5, lines 10-11 “Hexammine salt [Rh(NH3)a) X3 (X is halogen, No.
2nd grade)” is replaced with “hexaammine salt (Rh(NH3)
)6) X3v or pentaamine salt (Rh(N
H3)S X) Xe (X is halogen, No2, etc.)
” is corrected.

3、 明細書第7頁7行 「1〜50g/Q、1  と
あるをrO,15〜75g/fil  に訂正する。
3. On page 7, line 7 of the specification, "1 to 50 g/Q, 1" is corrected to rO, 15 to 75 g/fil.

4、 明細書7頁8行 「1〜10g10」 とあるを
10・15〜15g/Q」 に訂正する。
4. On page 7, line 8 of the specification, ``1~10g10'' should be corrected to ``10.15~15g/Q''.

5、 明細書第8頁1行 r (Rh(NHa )a 
) ”がRhCl32とあるを r (Rh(NHa 
)63 a+、 [Rh(NH3)5CΩ]2+。
5. Specification page 8, line 1 r (Rh(NHa)a)
)” is RhCl32. r (Rh(NHa
)63 a+, [Rh(NH3)5CΩ]2+.

(Rh(NHa )S H20) ”等がRhCf13
J  に訂正する。
(Rh(NHa)S H20)” etc. are RhCf13
Correct to J.

6、 明細書第15頁4行 r (Rh(NH3)6 
) 3“溶液」 とあるをr (Rh(NH3)s C
Q ) ”+及び(Rh(NH3)a )120 ) 
”の混合溶液jに訂正する。
6. Specification page 15, line 4 r (Rh(NH3)6
) 3 “Solution” r (Rh(NH3)s C
Q) ”+ and (Rh(NH3)a)120)
” is corrected to mixed solution j.

7、 明細書第15頁6行 rRh(NH3)”溶液」
 とあるを「ロジウムアンミン錯塩溶液」 に訂正する
7. Specification page 15, line 6 rRh(NH3) “solution”
Correct the statement to "rhodium ammine complex salt solution."

8、 明細書第17頁16行 r (Rh(NH3)a
 ) ”溶液」とあるを 「ロジウムアンミン錯イオン
溶液」 に訂正する。
8. Specification page 17 line 16 r (Rh(NH3)a
) Correct the word "solution" to "rhodium ammine complex ion solution."

以上 1−that's all 1-

Claims (1)

【特許請求の範囲】[Claims] ■ (α)ロジウムのアシミシ錯塩又はこれと他の金属
のアシミシ錯塩との混合物、(h)ヒトO牛シルアミシ
塩、及び(C)ヒドラジシを含有し、pH1O〜13で
あることを特徴とするロジウム又は0.;ラム合金の無
電解メツ生温。
■ Rhodium containing (α) rhodium ashimishi complex salt or a mixture of this and other metal ashimishi complex salts, (h) human O-beef sylamishi salt, and (C) hydrazishi, and having a pH of 10 to 13. or 0. ;Electroless raw temperature of ram alloy.
JP8553582A 1982-05-19 1982-05-19 Electroless plating bath for rhodium or rhodium alloys Expired JPS5939504B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8553582A JPS5939504B2 (en) 1982-05-19 1982-05-19 Electroless plating bath for rhodium or rhodium alloys

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8553582A JPS5939504B2 (en) 1982-05-19 1982-05-19 Electroless plating bath for rhodium or rhodium alloys

Publications (2)

Publication Number Publication Date
JPS58204168A true JPS58204168A (en) 1983-11-28
JPS5939504B2 JPS5939504B2 (en) 1984-09-25

Family

ID=13861570

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JPS5939504B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1035229A1 (en) * 1999-03-05 2000-09-13 Robert Bosch Gmbh Rhodium bath and process for rhodium deposition
US6706420B1 (en) 2000-07-06 2004-03-16 Honeywell International Inc. Electroless platinum-rhodium alloy plating
WO2007047374A2 (en) 2005-10-13 2007-04-26 Velocys, Inc. Electroless plating in microchannels
JP2007314876A (en) * 2006-04-28 2007-12-06 Nippon Kanizen Kk Electroless nickel plating liquid
US20100055422A1 (en) * 2008-08-28 2010-03-04 Bob Kong Electroless Deposition of Platinum on Copper

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0647884U (en) * 1992-12-09 1994-06-28 横河電子機器株式会社 Pseudo reflector
LT6548B (en) 2016-12-28 2018-08-10 Valstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras The solution of chemical platinum-rhodium alloy deposition and the method of continuous platinum-rhodium alloy coating formation

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1035229A1 (en) * 1999-03-05 2000-09-13 Robert Bosch Gmbh Rhodium bath and process for rhodium deposition
US6706420B1 (en) 2000-07-06 2004-03-16 Honeywell International Inc. Electroless platinum-rhodium alloy plating
WO2007047374A2 (en) 2005-10-13 2007-04-26 Velocys, Inc. Electroless plating in microchannels
WO2007047374A3 (en) * 2005-10-13 2009-03-26 Velocys Inc Electroless plating in microchannels
US8648006B2 (en) 2005-10-13 2014-02-11 Velocys, Inc. Electroless plating in microchannels
JP2007314876A (en) * 2006-04-28 2007-12-06 Nippon Kanizen Kk Electroless nickel plating liquid
US20100055422A1 (en) * 2008-08-28 2010-03-04 Bob Kong Electroless Deposition of Platinum on Copper

Also Published As

Publication number Publication date
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