JPS58202533A - Surface treatment device - Google Patents

Abstract

PURPOSE:To enable wide surface treatment, reduce the damage of the surface, and chemically stabilize a thin film, by providing a radical source having a spout for leading out chemically active radicals as radical rays. CONSTITUTION:The radical source 10 produces chemically active neutral particles (also called radical, atoms and molecules having unpaired electrons not bonded), and lets them spout from a single or a plurality of spouts 9, resulting in the formation of the radical rays 11. A sample 5 is placed in a surface treatment chamber 4 exhausted by an exhaust system 30, and then applied to surface treatment by the irradiation of the radical rays 11. Where, substance containing the constituent of the radical is supplied into the radical source 10 in a gas state via a leak valve 12, or provided in a form of solid or liquid in the radical source 10.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement in a surface treatment apparatus for forming a thin film on the surface of a sample or etching the surface of a sample in a gas phase.

In recent years, vapor phase (gas) blush treatment devices have been developed mainly in the field of semiconductor device manufacturing. The main surface treatment process is to form a thin film on the surface of the sample (9) and to etch the surface of the sample.

In addition, surface treatment processes include processes that change the physical and chemical properties of the surface of the sample (surface modification) and processes that inject impurities into the surface of the sample.

Devices that perform surface treatment in the gas phase include devices that place a sample in an atmosphere of particles involved in surface treatment (treated particles), and devices that perform surface treatment using a particle beam from a source where a large amount of the treated particles are present. There is a device that extracts the particle beam and makes it incident on the sample surface.

The former surface treatment apparatus is superior in mass production, but the latter surface treatment apparatus is superior in controllability.

Therefore, in the future, when high-quality thin films and ultrafine processing (etching) become necessary, it is thought that surface treatment equipment using the latter type of particle beam will become mainstream.
5', ``Conventional surface treatment equipment using particle beams uses ions or chemically stable atoms 9 as treatment particles.
molecules are used.

FIG. 1 shows the basic configuration of a conventional surface treatment apparatus using ions as treatment particles. This device extracts an ion beam (3) from an ion source (1) using an ion extraction system (2) K, and
The surface of a sample (5) placed inside is irradiated to treat the surface. The surface treatment chamber (4) is evacuated to the required vacuum pressure ('=10-' Torr) by an evacuation system (30). Types of surface treatment performed with this apparatus include thin film formation, etching, surface modification, and ion implantation.

FIG. 2 shows an example of the configuration of a conventional surface treatment apparatus using nine chemically stable atoms as treatment particles.

In the figure, a solid or liquid substance containing treated particles (
The treated particles generated by heating 6) with a heater (7) connected to a power source (31) are converted into a 9-atom source (8).
fill the inside. Atoms in the 9-atom molecule source (8).

Molecules are ejected from the ejection port (9) due to the pressure difference and form atoms.

Forming a molecular beam (29),
The light is incident on the surface of the sample (5) to perform surface treatment on the sample (5). Note that the surface treatment chamber (4) is evacuated to a necessary vacuum pressure by an exhaust system (30). The type of surface treatment performed with this apparatus is mainly thin film formation.

The apparatus shown in Fig. 2 described above (which uses the molecular beam (29)) has the disadvantage that only a limited amount of surface treatment can be performed due to the poor chemical reactivity of the treated particles that reach the surface of the sample (5). be. That is, only thin film formation can be performed as surface treatment, and other etching and surface modification are not possible. Furthermore, the properties of the formed thin film are also limited.

On the other hand, the apparatus shown in Fig. 1 (which uses the ion beam (3)) is capable of various =m processes, but the large kinetic energy (>1o) of the ions incident on the sample (5)
There is a drawback that many damages (such as lattice defects) remain on the surface of the sample (5) due to oe■). Furthermore, when forming a thin film using the ion beam (3), it becomes difficult to form a thin film of polymer because the incident ions break the bonds of the molecules forming the thin film.

Therefore, an object of the present invention is to provide a surface treatment apparatus that eliminates the above-mentioned drawbacks.

In order to achieve the above object, the present invention uses chemically active neutral particles (also called radicals, which refer to nine molecules of atoms having unbonded bonds (unpaired electrons)). The surface treatment apparatus is characterized in that it is constructed using a particle beam with treated particles as treated particles.

Due to the characteristic structure of the present invention, chemically active processing particles are used, so it is possible to perform thin film formation, etching, surface modification rings, and a wide range of surface treatments compared to the conventional apparatus shown in FIG. Tonafu. Furthermore, since the kinetic energy of the incident particle beam is low, damage to the surface is extremely reduced compared to the conventional device shown in FIG. In addition, when forming a thin film,
Since the bonds of thin film-forming molecules are not broken, it becomes possible to form extremely high-molecular and chemically stable thin films. Furthermore, by chemically reacting the surface of the sample substrate with the treated particles, it is also possible to change the physical and chemical properties of the surface. In addition, as radicals, F, CL
, Br, 0. Atomic substances such as H, N, CnFm, C
nCt+m, CnBr,.

There are molecular types such as CnHm, CbHtFICtkBrl, etc. in which all the C bonds are not closed.

It is also possible to use the above molecular radicals in which C is replaced with St, S, or B.

Hereinafter, the present invention will be explained in detail using figures.

FIG. 3 shows the basic configuration of the surface treatment apparatus according to the present invention. Chemically active neutral particles are created in the radical source (10) by one of the methods described below, and are ejected from one or more ejection ports (9) to form radical lines (11) (in space). At each point, a collection of active neutral particles is formed that flies in a certain range of directions. The surface of the sample (5) is treated by irradiating the radical beam (11) onto the sample (5) placed in the surface treatment chamber (4) which has been evacuated by the exhaust system (30). The material containing the components of the radicals is fed into the radical source (10) in a gaseous state via a beam (12) or is placed in the radical source (10) in solid or liquid form. In some cases, it is also possible to make the wall of the medium 1.::1 radical source (10) with a substance containing a radical □ component.

4 to 6 show specific configurations for generating radicals within the radical source (io). In FIG. 4, nine molecules of atoms in a radical source (10) are activated or decomposed by light (14) from a light source (13) to generate radicals.

Note that (15) is a light passing window, and (16) is a non-reflective termination of light.

FIG. 5 shows that an electrode (17) is placed in a radical source (10) and a discharge is generated between the electrodes by a power source (18).
Radicals are formed by activating or decomposing one atom molecule during electric discharge.

In FIG. 6, an electric field due to a high frequency (20) is applied within the radical source (10) by a high frequency cable (or guide) (19) to generate a discharge within the radical source (10).

Radicals are formed by activating or decomposing one atom molecule during electric discharge. A coil (
21), the efficiency of radical generation can be increased.

Convex: 1 The magnetic field can also be applied using a permanent magnet instead of the coil (21).

FIG. 7 shows another embodiment of the radical source (10) in the present invention. A jet log guide (22) is attached to the outlet of the jet port (9), so that the diameter of the jet port (9) gradually widens. By doing so, the flight directions of the radical rays (11) can be further aligned, making it possible to perform etching and thin film formation with good directionality.

FIG. 8 shows another embodiment of the invention. This device connects a radical line (11) containing multiple radicals (for example, radical A and radical B) to a radical separator (
23) required radicals (e.g. radical A)
The surface of the sample (5) is treated by selecting only the line (11') and irradiating it onto the sample (5). Note that the surface treatment chamber (4) in which the radical source (10), radical separator (23), and sample (5) are placed is evacuated to a vacuum by an exhaust system (30).

By doing so, it becomes possible to perform surface treatments such as thin film formation, etching, and surface modification with less impurities and surface contamination.

FIG. 9 shows a specific configuration of the radical separator (23) shown in FIG. 8. A plurality of rotary plates (25) and (26) are installed in a radical separation chamber (24) that is evacuated by an exhaust system (30') (9). The rotating plates (25), (26) are provided with one or more passage ports (27), (28), and the orbit of the radical ray (11) is periodically passed through the passage ports (27).

(28) crosses it. The radical beam (11) containing a plurality of types of radicals passes through the rotating plate (25) only when the passage port (27) of the rotating plate (25) comes to the orbital position of the particle beam (11). Flight speed of radical ray (11) (
Since the velocities of radicals A and B (velocities of radicals A and B are vA and g, respectively) differ depending on the radical species, the time at which they reach the rotating plate (26) differs depending on the radical species. At this time, the radical ray (11') (for example, the radical A
) can pass through the rotating plate (26). In this way, the radical rays (11) are separated. Now, the rotating plate (25
) crosses the trajectory of the particle beam (11), and then the passage port (28) of the rotating plate (26) crosses the trajectory of the particle beam (11).
), let τ be the time it takes to cross the trajectory. And a rotating plate (25).

(10) (26) Let the distance between them be d.

In order for radical A to pass through the radical separator (24), it is necessary to satisfy the following formula (%). Further, when the temperature of the gas phase of the radical source (10) is T1, the velocity V is where mm: mass of radical A, k: Portzmann's constant. Now, T
At a=500, fluorine radical F as radical A
(mass number 19), mm = 19X1.67X10-''F (Kg) = 3.17
X 10-” [:Kp]Vmu=7.44X10”
Cm) becomes. Therefore, τ=7.44X10−d(sec:1).For example, if d=10 tm=,,0.1m, then τ=
7.44 x 10-'' ((8)). By changing this time τ, it is also possible to allow other radical rays to pass through.

(11) FIG. 10 shows the configuration of yet another embodiment of the present invention. Radical line (1) from radical source (10)
1) is irradiated onto the sample (5) with a particle beam that is an appropriate combination of a chemically stable nine-atom molecular beam (9) from a molecular source (8) and an ion beam (3) from an ion source (1). This is a device that performs surface treatment on the sample (5). This device enables surface treatment with characteristics that cannot be obtained with a single particle beam.

[Brief explanation of the drawing]

Fig. 1 is a block diagram of a conventional surface treatment device using an ion beam, Fig. 2 is a block diagram of a conventional surface treatment device using a chemically stable atomic 9 molecule beam, and Fig. 3 is a block diagram of a conventional surface treatment device using a chemically stable atomic beam. A basic configuration diagram of the surface treatment apparatus, FIGS. 4 to 6 are specific configuration diagrams of the radical source in the apparatus shown in FIG. 3, and FIG. 7 is a diagram of another embodiment of the radical source in the apparatus shown in FIG. 3. FIG. 8 is a basic configuration diagram of another embodiment according to the present invention, FIG. 9 is a specific configuration diagram of the radical separator in the apparatus shown in FIG. 8, and FIG. FIG. 2 is a basic configuration diagram of an embodiment. (12) 1...Ion source, 2...Ion extraction system, 3...
・Ion beam, 4...Surface treatment chamber, 5...Sample, 6.
... Heated object, 7... Heater, 8... Chemically stable atom 9 molecule source, 9... Spout nozzle, 10... Radical source, 11.11'... Radical ray, 12... Leak pulp, 13... Light source, 14... Light, 15... Light passing window, 16... Non-reflective termination, 17... Electrode, 18
...High frequency power supply, 19...High frequency cable (guide), 20...High frequency, 21...Coil, 22...
Ejection log guide, 23... Radical separator, 24...
Radical separation chamber, 25.26... Rotating plate, 27.28
...passage port, 29...molecular beam, 30.
31'...Exhaust system, 31...AC power supply. Agent Patent attorney Toshiyuki Susuda (13) Yoshi 1 Figure fJ2 Ward≦L" 671 30 Kaya 3 Figure 5￥J 4 Figure 6 n 7 Fungus IZ Kaya 8 Figure Z Kuzu '7 Ruled 10 Figure-1 kidney

Claims (1)

[Scope of Claims] 1. A radical source having a means for generating chemically active radicals and a spout for extracting the generated radicals as a radical beam, and a surface treatment by irradiating the radical beam with the radical beam. 1. A surface treatment apparatus comprising: a surface treatment chamber in which a sample is placed for performing the treatment. 2. The surface treatment apparatus according to item 1, characterized in that a radical separation means is provided between the radical source and the surface treatment chamber in order to separate specific radicals from the radical rays. 3. The surface treatment apparatus according to item 1, wherein the jet nozzle is provided with a jet guide in which the diameter of the jet nozzle is gradually enlarged. 4. The surface treatment apparatus according to item 1, wherein the radical generating means generates radicals by irradiating light onto two molecules of atoms to be converted into radicals. (1) 5. The surface treatment apparatus according to item 1, wherein the radical generating means generates radicals from two molecules of atoms to be radicalized by a discharge forming means. 6. The surface treatment apparatus according to item 5, wherein the discharge forming means applies a high frequency voltage between opposing electrodes. 7. The surface treatment apparatus according to item 5, wherein the discharge forming means applies a high frequency voltage to a high frequency cable. 8. The surface treatment apparatus according to item 5, wherein the discharge forming means is based on a synergistic effect of a high frequency electric field and a magnetic field.