JPS58195846A - クロムマスク素材 - Google Patents
クロムマスク素材Info
- Publication number
- JPS58195846A JPS58195846A JP57078996A JP7899682A JPS58195846A JP S58195846 A JPS58195846 A JP S58195846A JP 57078996 A JP57078996 A JP 57078996A JP 7899682 A JP7899682 A JP 7899682A JP S58195846 A JPS58195846 A JP S58195846A
- Authority
- JP
- Japan
- Prior art keywords
- chromium
- layer
- oxide layer
- carbon
- blank
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 title claims abstract description 54
- 229910052804 chromium Inorganic materials 0.000 title claims abstract description 42
- 239000011651 chromium Substances 0.000 title claims abstract description 42
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910000423 chromium oxide Inorganic materials 0.000 claims abstract description 24
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 13
- 238000005530 etching Methods 0.000 abstract description 13
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 abstract description 6
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 238000004544 sputter deposition Methods 0.000 abstract description 4
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 abstract description 2
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 abstract description 2
- 150000001875 compounds Chemical class 0.000 abstract 1
- 238000007740 vapor deposition Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 18
- 238000001312 dry etching Methods 0.000 description 9
- 239000000203 mixture Substances 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- UFGZSIPAQKLCGR-UHFFFAOYSA-N chromium carbide Chemical compound [Cr]#C[Cr]C#[Cr] UFGZSIPAQKLCGR-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 229910003470 tongbaite Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57078996A JPS58195846A (ja) | 1982-05-10 | 1982-05-10 | クロムマスク素材 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57078996A JPS58195846A (ja) | 1982-05-10 | 1982-05-10 | クロムマスク素材 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58195846A true JPS58195846A (ja) | 1983-11-15 |
| JPH0243171B2 JPH0243171B2 (enrdf_load_stackoverflow) | 1990-09-27 |
Family
ID=13677499
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57078996A Granted JPS58195846A (ja) | 1982-05-10 | 1982-05-10 | クロムマスク素材 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58195846A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60125640U (ja) * | 1984-01-31 | 1985-08-24 | ホ−ヤ株式会社 | フオトマスク |
| JPS6267550A (ja) * | 1985-09-19 | 1987-03-27 | Mitsubishi Electric Corp | 露光用マスク |
| EP0203563A3 (en) * | 1985-05-28 | 1988-01-07 | Asahi Glass Company Ltd. | Photomask blank and photomask |
| JP2001305713A (ja) * | 2000-04-25 | 2001-11-02 | Shin Etsu Chem Co Ltd | フォトマスク用ブランクス及びフォトマスク |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH041197U (enrdf_load_stackoverflow) * | 1990-04-13 | 1992-01-07 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57151945A (en) * | 1981-03-17 | 1982-09-20 | Hoya Corp | Photomask blank and its manufacture |
-
1982
- 1982-05-10 JP JP57078996A patent/JPS58195846A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57151945A (en) * | 1981-03-17 | 1982-09-20 | Hoya Corp | Photomask blank and its manufacture |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60125640U (ja) * | 1984-01-31 | 1985-08-24 | ホ−ヤ株式会社 | フオトマスク |
| EP0203563A3 (en) * | 1985-05-28 | 1988-01-07 | Asahi Glass Company Ltd. | Photomask blank and photomask |
| JPS6267550A (ja) * | 1985-09-19 | 1987-03-27 | Mitsubishi Electric Corp | 露光用マスク |
| JP2001305713A (ja) * | 2000-04-25 | 2001-11-02 | Shin Etsu Chem Co Ltd | フォトマスク用ブランクス及びフォトマスク |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0243171B2 (enrdf_load_stackoverflow) | 1990-09-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4717625A (en) | Photomask material | |
| JPS58195846A (ja) | クロムマスク素材 | |
| US4661426A (en) | Process for manufacturing metal silicide photomask | |
| JPS63214755A (ja) | フオトマスク | |
| JPS6219051B2 (enrdf_load_stackoverflow) | ||
| JPS58169150A (ja) | フオトマスクの製造方法 | |
| JP2007212738A (ja) | フォトマスクブランクス及びその製造方法、並びに該フォトマスクブランクスを用いたフォトマスクの製造方法 | |
| JPH0518906B2 (enrdf_load_stackoverflow) | ||
| JP2004053662A (ja) | フォトマスクブランク、フォトマスク及びフォトマスクブランクの選定方法 | |
| JPS5990853A (ja) | フオトマスクブランク | |
| JP3664332B2 (ja) | ハーフトーン位相シフトフォトマスクの製造方法 | |
| JPH0366656B2 (enrdf_load_stackoverflow) | ||
| JPS60182442A (ja) | フオトマスク素材 | |
| JPS63214754A (ja) | フオトマスク | |
| JPS61128524A (ja) | 微細パタ−ン形成方法 | |
| JPS63202748A (ja) | フオトマスク材料 | |
| JPH0690508B2 (ja) | フオトマスク | |
| JPH0430576B2 (enrdf_load_stackoverflow) | ||
| JPS59129427A (ja) | プラズマエツチング方法 | |
| JPH05303210A (ja) | パターン形成方法 | |
| JPH10312066A (ja) | レジストパターン形成方法 | |
| JPS58178354A (ja) | ホトマスク素材およびその製造方法 | |
| JPS6259956A (ja) | パタ−ン形成用マスク | |
| JPS6097357A (ja) | 写真蝕刻方法 | |
| JPH0950113A (ja) | ハーフトーン位相シフトマスク及びその製造方法 |