JPS58194332A - 半導体を光照射で加熱する方法 - Google Patents
半導体を光照射で加熱する方法Info
- Publication number
- JPS58194332A JPS58194332A JP19457581A JP19457581A JPS58194332A JP S58194332 A JPS58194332 A JP S58194332A JP 19457581 A JP19457581 A JP 19457581A JP 19457581 A JP19457581 A JP 19457581A JP S58194332 A JPS58194332 A JP S58194332A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- heating
- circumference
- heating source
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 41
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims description 15
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 5
- 239000011733 molybdenum Substances 0.000 claims abstract description 5
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 4
- 150000002367 halogens Chemical class 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract description 2
- 239000010453 quartz Substances 0.000 abstract description 2
- 230000020169 heat generation Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 33
- 239000012535 impurity Substances 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000009940 knitting Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
- H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Resistance Heating (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19457581A JPS58194332A (ja) | 1981-12-04 | 1981-12-04 | 半導体を光照射で加熱する方法 |
| US06/445,493 US4469529A (en) | 1981-12-04 | 1982-11-30 | Method for heating semiconductor wafer by means of application of radiated light with supplemental circumferential heating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19457581A JPS58194332A (ja) | 1981-12-04 | 1981-12-04 | 半導体を光照射で加熱する方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58194332A true JPS58194332A (ja) | 1983-11-12 |
| JPS6244847B2 JPS6244847B2 (nl) | 1987-09-22 |
Family
ID=16326811
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19457581A Granted JPS58194332A (ja) | 1981-12-04 | 1981-12-04 | 半導体を光照射で加熱する方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58194332A (nl) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS593934A (ja) * | 1982-06-30 | 1984-01-10 | Ushio Inc | 半導体ウエハ−を光照射で加熱する方法 |
| JPS593933A (ja) * | 1982-06-30 | 1984-01-10 | Ushio Inc | 半導体ウエハ−を光照射で加熱する方法 |
| JPS5998518A (ja) * | 1982-11-26 | 1984-06-06 | Seiko Epson Corp | ランプ・アニ−ル装置 |
-
1981
- 1981-12-04 JP JP19457581A patent/JPS58194332A/ja active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS593934A (ja) * | 1982-06-30 | 1984-01-10 | Ushio Inc | 半導体ウエハ−を光照射で加熱する方法 |
| JPS593933A (ja) * | 1982-06-30 | 1984-01-10 | Ushio Inc | 半導体ウエハ−を光照射で加熱する方法 |
| JPS6331095B2 (nl) * | 1982-06-30 | 1988-06-22 | Ushio Electric Inc | |
| JPS6331093B2 (nl) * | 1982-06-30 | 1988-06-22 | Ushio Electric Inc | |
| JPS5998518A (ja) * | 1982-11-26 | 1984-06-06 | Seiko Epson Corp | ランプ・アニ−ル装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6244847B2 (nl) | 1987-09-22 |
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