JPS58176938A - 微細パタ−ン形成法 - Google Patents

微細パタ−ン形成法

Info

Publication number
JPS58176938A
JPS58176938A JP57059612A JP5961282A JPS58176938A JP S58176938 A JPS58176938 A JP S58176938A JP 57059612 A JP57059612 A JP 57059612A JP 5961282 A JP5961282 A JP 5961282A JP S58176938 A JPS58176938 A JP S58176938A
Authority
JP
Japan
Prior art keywords
pattern
layer
graft
film
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57059612A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6226174B2 (enExample
Inventor
Toshiaki Tamamura
敏昭 玉村
Saburo Imamura
三郎 今村
Masao Morita
雅夫 森田
Osamu Kogure
小暮　攻
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP57059612A priority Critical patent/JPS58176938A/ja
Priority to DE8383103348T priority patent/DE3377597D1/de
Priority to EP83103348A priority patent/EP0091651B1/en
Priority to US06/482,613 priority patent/US4426247A/en
Publication of JPS58176938A publication Critical patent/JPS58176938A/ja
Publication of JPS6226174B2 publication Critical patent/JPS6226174B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P95/00—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP57059612A 1982-04-12 1982-04-12 微細パタ−ン形成法 Granted JPS58176938A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP57059612A JPS58176938A (ja) 1982-04-12 1982-04-12 微細パタ−ン形成法
DE8383103348T DE3377597D1 (en) 1982-04-12 1983-04-06 Method for forming micropattern
EP83103348A EP0091651B1 (en) 1982-04-12 1983-04-06 Method for forming micropattern
US06/482,613 US4426247A (en) 1982-04-12 1983-04-06 Method for forming micropattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57059612A JPS58176938A (ja) 1982-04-12 1982-04-12 微細パタ−ン形成法

Publications (2)

Publication Number Publication Date
JPS58176938A true JPS58176938A (ja) 1983-10-17
JPS6226174B2 JPS6226174B2 (enExample) 1987-06-08

Family

ID=13118240

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57059612A Granted JPS58176938A (ja) 1982-04-12 1982-04-12 微細パタ−ン形成法

Country Status (1)

Country Link
JP (1) JPS58176938A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01123232A (ja) * 1987-11-09 1989-05-16 Mitsubishi Electric Corp パターン形成方法
JPH03504543A (ja) * 1989-11-09 1991-10-03 ケルンフォルシュングスツェントルム　カールスルーエ　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング 金属性マイクロ構造体の製法
US7952106B2 (en) 2009-04-10 2011-05-31 Everlight Electronics Co., Ltd. Light emitting diode device having uniform current distribution and method for forming the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01123232A (ja) * 1987-11-09 1989-05-16 Mitsubishi Electric Corp パターン形成方法
JPH03504543A (ja) * 1989-11-09 1991-10-03 ケルンフォルシュングスツェントルム　カールスルーエ　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング 金属性マイクロ構造体の製法
US7952106B2 (en) 2009-04-10 2011-05-31 Everlight Electronics Co., Ltd. Light emitting diode device having uniform current distribution and method for forming the same
US8258519B2 (en) 2009-04-10 2012-09-04 Everlight Electronics Co., Ltd. Light emitting diode device having uniform current distribution

Also Published As

Publication number Publication date
JPS6226174B2 (enExample) 1987-06-08

Similar Documents

Publication Publication Date Title
US4426247A (en) Method for forming micropattern
TWI351582B (en) Photoresist
JP5058733B2 (ja) ケイ素含有微細パターン形成用組成物を用いた微細パターン形成方法
JP2707785B2 (ja) レジスト組成物およびパターン形成方法
TW201418356A (zh) 微細圖型形成方法，顯影液
JPS58176938A (ja) 微細パタ−ン形成法
JPS60501777A (ja) 二酸化ケイ素系グラフト重合リソグラフマスク
JPS61218133A (ja) 半導体デバイスのパタ−ン形成方法
JP7389910B2 (ja) 基板をナノ構造化するための方法
JPS58186935A (ja) パタ−ン形成法
JPS59148335A (ja) 微細パタ−ン形成法
JPH0472223B2 (enExample)
JPS5813900B2 (ja) エポキシ − ジユウゴウタイコウエネルギ−ビ−ムレジストノ ケイセイホウ
JPS6098431A (ja) パタン形成材料及びパタン形成方法
JPS61294433A (ja) 高解像度感光性樹脂組成物およびこれを使用するサブミクロンパタ−ンの製造方法
CN116332122B (zh) 等离子改性3d纳米图案及引导嵌段共聚物自组装的方法
JPH0252357A (ja) パターン形成方法
JPS61294432A (ja) パタ−ン形成材料及びパタ−ン形成方法
JP2012137778A (ja) ケイ素含有微細パターン形成用組成物
JPS6256947A (ja) 二層構造レジスト用平坦化層組成物
JPH0462661B2 (enExample)
JPS59193451A (ja) パタ−ン形成用材料及びパタ−ン形成方法
JPH0544019B2 (enExample)
JPS6161532B2 (enExample)
JPS6091350A (ja) 電離放射線感応ネガ型レジスト