JPS5817638A - バンプ形成装置 - Google Patents

バンプ形成装置

Info

Publication number
JPS5817638A
JPS5817638A JP56115084A JP11508481A JPS5817638A JP S5817638 A JPS5817638 A JP S5817638A JP 56115084 A JP56115084 A JP 56115084A JP 11508481 A JP11508481 A JP 11508481A JP S5817638 A JPS5817638 A JP S5817638A
Authority
JP
Japan
Prior art keywords
wafer
electrode
current
bump forming
periphery
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56115084A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6325709B2 (OSRAM
Inventor
Kazuhisa Nakamoto
中元 和久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56115084A priority Critical patent/JPS5817638A/ja
Publication of JPS5817638A publication Critical patent/JPS5817638A/ja
Publication of JPS6325709B2 publication Critical patent/JPS6325709B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/47

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP56115084A 1981-07-24 1981-07-24 バンプ形成装置 Granted JPS5817638A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56115084A JPS5817638A (ja) 1981-07-24 1981-07-24 バンプ形成装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56115084A JPS5817638A (ja) 1981-07-24 1981-07-24 バンプ形成装置

Publications (2)

Publication Number Publication Date
JPS5817638A true JPS5817638A (ja) 1983-02-01
JPS6325709B2 JPS6325709B2 (OSRAM) 1988-05-26

Family

ID=14653788

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56115084A Granted JPS5817638A (ja) 1981-07-24 1981-07-24 バンプ形成装置

Country Status (1)

Country Link
JP (1) JPS5817638A (OSRAM)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6025149U (ja) * 1983-07-27 1985-02-20 関西日本電気株式会社 バンプ電極形成ウエ−ハ
JPS636860A (ja) * 1986-06-27 1988-01-12 Oki Electric Ind Co Ltd フリップチップ用バンプ形成方法
JPH01156566A (ja) * 1987-12-07 1989-06-20 Pellerin Milnor Corp 液体吸収織物の処理機械
DE19803490C2 (de) * 1997-04-28 2003-04-24 Mitsubishi Electric Corp Abscheidevorrichtung

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6025149U (ja) * 1983-07-27 1985-02-20 関西日本電気株式会社 バンプ電極形成ウエ−ハ
JPS636860A (ja) * 1986-06-27 1988-01-12 Oki Electric Ind Co Ltd フリップチップ用バンプ形成方法
JPH01156566A (ja) * 1987-12-07 1989-06-20 Pellerin Milnor Corp 液体吸収織物の処理機械
DE19803490C2 (de) * 1997-04-28 2003-04-24 Mitsubishi Electric Corp Abscheidevorrichtung

Also Published As

Publication number Publication date
JPS6325709B2 (OSRAM) 1988-05-26

Similar Documents

Publication Publication Date Title
JPS58182823A (ja) 半導体ウエハ−のメツキ装置
JPS5817638A (ja) バンプ形成装置
US3010885A (en) Method for electrolytically etching and thereafter anodically oxidizing an essentially monocrystalline semiconductor body having a p-n junction
CN212451705U (zh) 电镀载具
US2817607A (en) Method of making semi-conductor bodies
JPS6247131A (ja) 反応性イオンエツチング装置
JPS621000B2 (OSRAM)
US3117067A (en) Method of making semiconductor devices
JP3343077B2 (ja) めっき用電極
JPH05166815A (ja) メッキバンプ形成方法及びそれに用いるウエーハメッキ用治具
JPH02225693A (ja) 噴流式ウエハメッキ装置
JP3152713B2 (ja) 半導体装置の電解メッキ方法
JPH0580141B2 (OSRAM)
JP3018796B2 (ja) 噴流メッキ装置
JP3386672B2 (ja) ウェハメッキ装置
JPS60116133A (ja) 半導体製造装置
JPH0329876B2 (OSRAM)
JPS618943A (ja) 半導体装置の製造方法
JPH01255226A (ja) 基板洗浄装置
JPS6020477B2 (ja) 噴流式メツキ装置
JPS649733B2 (OSRAM)
GB885137A (en) Improvements in or relating to methods of manufacturing semi-conductive devices
JPS645886Y2 (OSRAM)
JPH08111393A (ja) 半導体ウエハーのメッキ方法
JPS6094828U (ja) 半導体ウエハ−ス製造用化成装置