JPS58169925A - ノ−ド電圧評価用の絶縁ゲ−ト電界効果トランジスタ集積回路 - Google Patents
ノ−ド電圧評価用の絶縁ゲ−ト電界効果トランジスタ集積回路Info
- Publication number
- JPS58169925A JPS58169925A JP58010635A JP1063583A JPS58169925A JP S58169925 A JPS58169925 A JP S58169925A JP 58010635 A JP58010635 A JP 58010635A JP 1063583 A JP1063583 A JP 1063583A JP S58169925 A JPS58169925 A JP S58169925A
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- transistor
- voltage source
- circuit according
- reference voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005669 field effect Effects 0.000 title description 2
- 230000006870 function Effects 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 230000005684 electric field Effects 0.000 claims 1
- 230000003068 static effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 3
- 230000007704 transition Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/067—Single-ended amplifiers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Logic Circuits (AREA)
- Read Only Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
- Non-Volatile Memory (AREA)
- Manipulation Of Pulses (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP82100657.4 | 1982-01-30 | ||
| EP82100657A EP0085123B1 (de) | 1982-01-30 | 1982-01-30 | Integrierte Isolierschicht-Feldeffekttransistor-Schaltung zum Bewerten der Spannung eines Abtastknotens |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58169925A true JPS58169925A (ja) | 1983-10-06 |
| JPH0349159B2 JPH0349159B2 (enExample) | 1991-07-26 |
Family
ID=8188848
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58010635A Granted JPS58169925A (ja) | 1982-01-30 | 1983-01-27 | ノ−ド電圧評価用の絶縁ゲ−ト電界効果トランジスタ集積回路 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4742253A (enExample) |
| EP (1) | EP0085123B1 (enExample) |
| JP (1) | JPS58169925A (enExample) |
| DE (1) | DE3264160D1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015072522A1 (ja) * | 2013-11-15 | 2015-05-21 | 旭化成エレクトロニクス株式会社 | 電圧検出器、基準電圧設定方法、および、プログラム |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01159897A (ja) * | 1987-12-16 | 1989-06-22 | Toshiba Corp | センスアンプ |
| US5056063A (en) * | 1990-05-29 | 1991-10-08 | Texas Instruments Incorporated | Active sense amplifier with dynamic pre-charge transistor |
| US5397346A (en) * | 1992-04-28 | 1995-03-14 | Carbomedics, Inc. | Prosthetic heart valve with sewing ring |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53123630A (en) * | 1977-04-04 | 1978-10-28 | Nec Corp | Sense circuit of mis memory |
| JPS5634187A (en) * | 1979-08-10 | 1981-04-06 | Siemens Ag | Mosstransistor circuit |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3932848A (en) * | 1975-01-20 | 1976-01-13 | Intel Corporation | Feedback circuit for allowing rapid charging and discharging of a sense node in a static memory |
| US3946369A (en) * | 1975-04-21 | 1976-03-23 | Intel Corporation | High speed MOS RAM employing depletion loads |
| JPS5833638B2 (ja) * | 1979-09-21 | 1983-07-21 | 株式会社日立製作所 | メモリ装置 |
| JPS5931155B2 (ja) * | 1979-10-11 | 1984-07-31 | インターナシヨナルビジネス マシーンズ コーポレーシヨン | 感知増幅回路 |
| US4308468A (en) * | 1979-11-15 | 1981-12-29 | Xerox Corporation | Dual-FET sample and hold circuit |
| US4459497A (en) * | 1982-01-25 | 1984-07-10 | Motorola, Inc. | Sense amplifier using different threshold MOS devices |
-
1982
- 1982-01-30 EP EP82100657A patent/EP0085123B1/de not_active Expired
- 1982-01-30 DE DE8282100657T patent/DE3264160D1/de not_active Expired
-
1983
- 1983-01-25 US US06/460,957 patent/US4742253A/en not_active Expired - Fee Related
- 1983-01-27 JP JP58010635A patent/JPS58169925A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53123630A (en) * | 1977-04-04 | 1978-10-28 | Nec Corp | Sense circuit of mis memory |
| JPS5634187A (en) * | 1979-08-10 | 1981-04-06 | Siemens Ag | Mosstransistor circuit |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015072522A1 (ja) * | 2013-11-15 | 2015-05-21 | 旭化成エレクトロニクス株式会社 | 電圧検出器、基準電圧設定方法、および、プログラム |
| JPWO2015072522A1 (ja) * | 2013-11-15 | 2017-03-16 | 旭化成エレクトロニクス株式会社 | 電圧検出器、基準電圧設定方法、および、プログラム |
| US9666287B2 (en) | 2013-11-15 | 2017-05-30 | Asahi Kasei Microdevices Corporation | Voltage detector, method for setting reference voltage and computer readable medium |
Also Published As
| Publication number | Publication date |
|---|---|
| US4742253A (en) | 1988-05-03 |
| JPH0349159B2 (enExample) | 1991-07-26 |
| EP0085123A1 (de) | 1983-08-10 |
| DE3264160D1 (en) | 1985-07-25 |
| EP0085123B1 (de) | 1985-06-19 |
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