JPH0349159B2 - - Google Patents
Info
- Publication number
- JPH0349159B2 JPH0349159B2 JP58010635A JP1063583A JPH0349159B2 JP H0349159 B2 JPH0349159 B2 JP H0349159B2 JP 58010635 A JP58010635 A JP 58010635A JP 1063583 A JP1063583 A JP 1063583A JP H0349159 B2 JPH0349159 B2 JP H0349159B2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- integrated circuit
- voltage source
- reference voltage
- transfer transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/067—Single-ended amplifiers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
- Non-Volatile Memory (AREA)
- Manipulation Of Pulses (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Logic Circuits (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP82100657.4 | 1982-01-30 | ||
| EP82100657A EP0085123B1 (de) | 1982-01-30 | 1982-01-30 | Integrierte Isolierschicht-Feldeffekttransistor-Schaltung zum Bewerten der Spannung eines Abtastknotens |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58169925A JPS58169925A (ja) | 1983-10-06 |
| JPH0349159B2 true JPH0349159B2 (enExample) | 1991-07-26 |
Family
ID=8188848
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58010635A Granted JPS58169925A (ja) | 1982-01-30 | 1983-01-27 | ノ−ド電圧評価用の絶縁ゲ−ト電界効果トランジスタ集積回路 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4742253A (enExample) |
| EP (1) | EP0085123B1 (enExample) |
| JP (1) | JPS58169925A (enExample) |
| DE (1) | DE3264160D1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01159897A (ja) * | 1987-12-16 | 1989-06-22 | Toshiba Corp | センスアンプ |
| US5056063A (en) * | 1990-05-29 | 1991-10-08 | Texas Instruments Incorporated | Active sense amplifier with dynamic pre-charge transistor |
| US5397346A (en) * | 1992-04-28 | 1995-03-14 | Carbomedics, Inc. | Prosthetic heart valve with sewing ring |
| EP3070846B1 (en) * | 2013-11-15 | 2020-04-01 | Asahi Kasei Microdevices Corporation | Voltage detector and method for setting baseline voltage |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3932848A (en) * | 1975-01-20 | 1976-01-13 | Intel Corporation | Feedback circuit for allowing rapid charging and discharging of a sense node in a static memory |
| US3946369A (en) * | 1975-04-21 | 1976-03-23 | Intel Corporation | High speed MOS RAM employing depletion loads |
| JPS5947390B2 (ja) * | 1977-04-04 | 1984-11-19 | 日本電気株式会社 | Ｍｉｓメモリのセンス回路 |
| DE2932605C2 (de) * | 1979-08-10 | 1982-12-16 | Siemens AG, 1000 Berlin und 8000 München | Schaltungsanordnung mit MOS-Transistoren zum raschen Bewerten des logischen Zustandes eines Abtastknotens |
| JPS5833638B2 (ja) * | 1979-09-21 | 1983-07-21 | 株式会社日立製作所 | メモリ装置 |
| JPS5931155B2 (ja) * | 1979-10-11 | 1984-07-31 | インターナシヨナルビジネス マシーンズ コーポレーシヨン | 感知増幅回路 |
| US4308468A (en) * | 1979-11-15 | 1981-12-29 | Xerox Corporation | Dual-FET sample and hold circuit |
| US4459497A (en) * | 1982-01-25 | 1984-07-10 | Motorola, Inc. | Sense amplifier using different threshold MOS devices |
-
1982
- 1982-01-30 EP EP82100657A patent/EP0085123B1/de not_active Expired
- 1982-01-30 DE DE8282100657T patent/DE3264160D1/de not_active Expired
-
1983
- 1983-01-25 US US06/460,957 patent/US4742253A/en not_active Expired - Fee Related
- 1983-01-27 JP JP58010635A patent/JPS58169925A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| US4742253A (en) | 1988-05-03 |
| EP0085123A1 (de) | 1983-08-10 |
| DE3264160D1 (en) | 1985-07-25 |
| JPS58169925A (ja) | 1983-10-06 |
| EP0085123B1 (de) | 1985-06-19 |
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