JPS5816570A - 薄膜電界効果トランジスタ - Google Patents

薄膜電界効果トランジスタ

Info

Publication number
JPS5816570A
JPS5816570A JP56115769A JP11576981A JPS5816570A JP S5816570 A JPS5816570 A JP S5816570A JP 56115769 A JP56115769 A JP 56115769A JP 11576981 A JP11576981 A JP 11576981A JP S5816570 A JPS5816570 A JP S5816570A
Authority
JP
Japan
Prior art keywords
electrode
thin film
semiconductor thin
electrodes
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56115769A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0322064B2 (enrdf_load_html_response
Inventor
Koji Suzuki
幸治 鈴木
Toshio Aoki
寿男 青木
Mitsushi Ikeda
光志 池田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56115769A priority Critical patent/JPS5816570A/ja
Publication of JPS5816570A publication Critical patent/JPS5816570A/ja
Publication of JPH0322064B2 publication Critical patent/JPH0322064B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]

Landscapes

  • Bipolar Transistors (AREA)
  • Light Receiving Elements (AREA)
JP56115769A 1981-07-23 1981-07-23 薄膜電界効果トランジスタ Granted JPS5816570A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56115769A JPS5816570A (ja) 1981-07-23 1981-07-23 薄膜電界効果トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56115769A JPS5816570A (ja) 1981-07-23 1981-07-23 薄膜電界効果トランジスタ

Publications (2)

Publication Number Publication Date
JPS5816570A true JPS5816570A (ja) 1983-01-31
JPH0322064B2 JPH0322064B2 (enrdf_load_html_response) 1991-03-26

Family

ID=14670589

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56115769A Granted JPS5816570A (ja) 1981-07-23 1981-07-23 薄膜電界効果トランジスタ

Country Status (1)

Country Link
JP (1) JPS5816570A (enrdf_load_html_response)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59122361U (ja) * 1983-02-07 1984-08-17 スガツネ工業株式会社 閉扉保持用蝶番
JPS62198155A (ja) * 1986-02-26 1987-09-01 Matsushita Electric Ind Co Ltd 薄膜イメ−ジセンサ
JPS63193578A (ja) * 1987-02-06 1988-08-10 Fuji Xerox Co Ltd 電界効果型非晶質シリコン・フオトトランジスタ
JPH0216777A (ja) * 1988-07-05 1990-01-19 Seikosha Co Ltd 半導体光検出装置
JPH06112486A (ja) * 1992-09-28 1994-04-22 Alps Electric Co Ltd 薄膜トランジスタと液晶表示装置用基板および薄膜トランジスタの製造方法
JP2008098638A (ja) * 2006-10-09 2008-04-24 Korea Electronics Telecommun カルコゲナイド層を持つ薄膜トランジスタ及びその製造方法
JP2010135384A (ja) * 2008-12-02 2010-06-17 Mitsubishi Electric Corp 薄膜トランジスタアレイ基板、その製造方法及び液晶表示装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59122361U (ja) * 1983-02-07 1984-08-17 スガツネ工業株式会社 閉扉保持用蝶番
JPS62198155A (ja) * 1986-02-26 1987-09-01 Matsushita Electric Ind Co Ltd 薄膜イメ−ジセンサ
JPS63193578A (ja) * 1987-02-06 1988-08-10 Fuji Xerox Co Ltd 電界効果型非晶質シリコン・フオトトランジスタ
JPH0216777A (ja) * 1988-07-05 1990-01-19 Seikosha Co Ltd 半導体光検出装置
JPH06112486A (ja) * 1992-09-28 1994-04-22 Alps Electric Co Ltd 薄膜トランジスタと液晶表示装置用基板および薄膜トランジスタの製造方法
JP2008098638A (ja) * 2006-10-09 2008-04-24 Korea Electronics Telecommun カルコゲナイド層を持つ薄膜トランジスタ及びその製造方法
JP2010135384A (ja) * 2008-12-02 2010-06-17 Mitsubishi Electric Corp 薄膜トランジスタアレイ基板、その製造方法及び液晶表示装置

Also Published As

Publication number Publication date
JPH0322064B2 (enrdf_load_html_response) 1991-03-26

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