JPS58164222A - Heat treatment device - Google Patents

Abstract

PURPOSE:To make uniform the heating condition of a semiconductor substrate arranged in a vessel by a method wherein the treatment vessel is constituted of a case body part having an inlet port and an exhaust port, and having circulating holes for a cooling fluid at the inside of the body, and of a flat board type top plate consisting of transparent quartz, and infrared lamps for heating by radiation are provided at the upper part of the top plate. CONSTITUTION:The supporting stainless steel frame 8 to constitute the cylindrical side wall is provided on the stainless steel base 7 having the inlet port 15 and the exhaust port 16, and the top plate 9 consisting of the transparent quartz flat board is put on the upper face of the supporting frame 8 being supported with the ring type fixing frame 10. At this construction, circulating paths 11 for cooling water are formed respectively in the supporting frame 8 and the fixing frame 10, a supporting desk 12 to mount the semiconductor substrate 13 is provided in space surrounded with the supporting frame 8, and a thermally shielding plate 17 of opaque quartz is arranged at the lower side thereof. After then, the infrared lamps 14 for heating are provided at the upper part of the plate 9 interposing the prescribed interval between them, and the surface of the substrate 13 is heated by direct radiation through the plate 9.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention provides a processing container having a predetermined atmosphere in its internal sound M;
For example, in a vapor phase growth apparatus used in semiconductor manufacturing, the heat treatment apparatus heat-treats the surface of an object inside a processing chamber using radiant heat from outside the chamber, and thermal stress generated during external force or high-temperature heating is applied.

As shown in FIG. 1, in a conventional heat treatment apparatus, a processing container is composed of a transparent quartz Pelger 2 integrally formed with a metal base 1, and an infrared lamp 3 provided on the outside of the container is used as a processing container. A14 is intended to heat the object to be heated 6 supported on the support stand 4 inside the container by thermal radiation.
Yes.

That is, a concave mirror 6 having a parabolic surface is provided behind the infrared lamp, and the reflection characteristics of the concave mirror are used to maintain the direction of heat radiation parallel to the object surface. In addition, the quartz Pelger sandwiched between the infrared lamp 3 and the support base 4 has a flat plate shape perpendicular to the direction of the arrow The goal is to avoid catastrophe and refraction as much as possible to achieve uniform heating. However, with this heat treatment equipment, heat is accumulated in the quartz Pel jar due to reflection and refraction of infrared rays on the side walls of the quartz Pel jar, as well as the heat conduction effect of the metal base. It has drawbacks such as cracks occurring in the Pelger due to thermal stress and the inability to achieve uniform heating on the surface of the object due to heat radiation from the quartz Pelger and the base. Furthermore, since the quartz Pel jar occupies a large proportion of the entire processing container, it has the disadvantage of being brittle against pressure differences inside and outside the container and external forces, and it is difficult to manufacture a quartz Pel jar in the shape of the conventional example. It had the following drawbacks.

The present invention solves the above-mentioned conventional drawbacks, and one embodiment thereof will be described below with reference to FIGS. 2 and 3.

In FIG. 2, 7 is a stainless steel base, and 8 is a stainless steel support frame that is fixed on the base 7 by a known method and forms a cylindrical side wall of the processing container.
A top plate 9 made of a transparent quartz plate is placed on the top of the
It is fixed by a fixed frame 10 made of stainless steel and shaped like a hollow disc.

In other words, the processing container is the base 7. Support frame 8. It consists of a metal casing section with a fixed frame of 1° and a top plate 9. Cooling water circulation holes 11 are provided inside the support frame 8 and the fixed frame 1o. Reference numeral 12 denotes a substrate support stand for supporting a semiconductor substrate 13 provided inside a processing container consisting of the above-mentioned casing and top plate 9. Reference numeral 14 denotes a heating infrared lamp, which is installed so as to face the surface of the substrate support 12 with the top plate e interposed therebetween.

16 is an intake port provided on the base, and 16 is an exhaust port provided on the base. Reference numeral 17 denotes a heat shield plate made of, for example, opaque quartz, provided on the base 7 in order to prevent heat radiation from the infrared lamp 14 to the base 7.

In configuration 1, the reaction gas and carrier gas flow into the processing container through the intake port 16 by a gas suction device (not shown), and flow out of the container from the exhaust port 16 by an exhaust device (not shown). The radiant heat from the infrared #2 pump 14 and the mixed gas form a predetermined atmosphere including a heated state inside the processing container. That is, the surface of the semiconductor substrate 13 placed on the substrate support stand 12 is heated to a high temperature by radiant heat from the infrared lamp 14, inducing a thermal reaction of the reaction gas and performing vapor phase growth. In the above heat treatment apparatus, the stainless steel support frame 8.
The heat conducted to the fixed frame 1o is absorbed by the cooling water circulating inside the fixed frame 1o, and the infrared lamp 1 to the base 7
Heat radiation from 4 is prevented by a heat shield plate 17. As a result of preventing heat accumulation in the casing other than the top plate of the processing container as described above, the processing container is prevented from being sealed abnormally or damaged due to high-temperature heating. In order to eliminate the influence of secondary radiant heat on the semiconductor substrate 13, the surface of the semiconductor substrate 13 is heated only by the heat directly radiated through the quartz top plate 9. Produces the effect of maintaining uniformity. Furthermore, the flat transparent quartz top plate 9 that separates the semiconductor substrate 13 and the infrared lamp 14 into the inside and outside of the processing container is easier to manufacture than the conventional Pelger type, which is manufactured integrally, and is also easy to process. By using stainless steel for the main parts of the container, a processing container with sufficient strength can be obtained.

In this embodiment, the processing container has a cylindrical shape, but it may have another shape such as a rectangular shape. Further, it is not necessary to provide the intake port and the exhaust port in the base 7, and the support frame 8. It may be provided anywhere in the housing including the fixed frame 10. Further, cooling fluid circulation holes may be provided inside the base 7 to obtain the effect of preventing heat accumulation. Furthermore, in order to prevent heat accumulation on the top plate 9, it is also possible to blow cooling gas onto the surface of the top plate from the outside.

As described above, according to the present invention, the processing container is configured such that a transparent quartz top plate is used only in the portion where the infrared lamp and the support stand face each other, and cooling fluid circulation holes are provided inside the other housing portions. By using components made of high-strength metal, it avoids the effects of thermal stress caused by high-temperature heating, achieves uniform heating, and increases the strength of the entire processing container. It is.

[Brief explanation of the drawing]

FIG. 1 is a sectional view of a conventional heat treatment apparatus, FIG. 2 is a sectional view of a heat treatment apparatus according to an embodiment of the present invention, and FIG. 3 is a view taken along the line A-AI in FIG. 7...Base, 8...Supporting member, 9...
...Top plate, 1o...Lid, 11.
... Cooling water circulation path, 12 ... Support stand,
14...Infrared lamp, 16...Intake port, 16...Exhaust port, 17...Heat shield plate. Name of agent: Patent attorney Toshio Nakao and 1 other person $1
311 Procedural amendment June 23, 1980 Mr. Commissioner of the Japan Patent Office l Indication of the case 1988 Patent Application No. 48218 2 Name of the invention Heat treatment device 3 Relationship with the person making the amendment Patent application Person who made the amendment 1006 Kadoma, Kadoma City, Osaka Prefecture Name
(582) Matsushita Electric Industrial Co., Ltd. Representative Yama
Toshihiko Shimo 4 Agent 571 Address 1006 Kadoma, Kadoma-shi, Osaka Prefecture 6 Detailed explanation of the invention in the specification subject to amendment Column 1: ``The heat treatment apparatus can be obtained'' on page 2, line 4 of the specification letter is corrected to ``obtaining a heat treatment device.'' 2. Change "It is possible." on page 6, line 14 of the specification letter to "It is possible. Furthermore, the substrate support stand 1 that supports the semiconductor substrate 13
2 may be configured to be rotatable in order to make the film thickness uniform in vapor phase growth. ” he corrected.

Claims (1)

[Claims] (1) A processing container composed of a casing having an intake port and an exhaust port and a cooling fluid circulation hole therein, and a flat plate-shaped top plate made of transparent quartz; It consists of a support stand for the object to be heated, which is provided parallel to the top plate, and an infrared heating lamp for radiant heating, which is provided outside the processing container and is attached to face the support stand and the top plate. A heat treatment device that creates an atmosphere of @) The auxiliary processing apparatus according to claim 1, further comprising a heat shield plate provided inside the processing container to prevent radiant heating of the inner wall of the processing container by infrared rays.