JPH07161653A - Heat-treating device - Google Patents
Heat-treating deviceInfo
- Publication number
- JPH07161653A JPH07161653A JP31011993A JP31011993A JPH07161653A JP H07161653 A JPH07161653 A JP H07161653A JP 31011993 A JP31011993 A JP 31011993A JP 31011993 A JP31011993 A JP 31011993A JP H07161653 A JPH07161653 A JP H07161653A
- Authority
- JP
- Japan
- Prior art keywords
- matter
- processed
- treated
- infrared rays
- calcium fluoride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は放射線、特に赤外線を用
いた熱処理装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat treatment apparatus using radiation, especially infrared rays.
【0002】[0002]
【従来の技術】半導体装置の製造に於いて、酸化,拡
散,アニール等様々な熱処理が行われている。従来これ
らの熱処理は主に加熱ヒータによって行われてきた。近
年、拡散層を浅くするための熱処理時間の短時間化,被
処理物を清浄に保つための閉空間中の熱処理,ウェハの
大口径化による枚葉熱処理等により、ヒータに代わる加
熱手段として赤外線などの放射線が用いられる様になっ
てきた。2. Description of the Related Art In the manufacture of semiconductor devices, various heat treatments such as oxidation, diffusion and annealing are performed. Conventionally, these heat treatments have been mainly performed by a heater. In recent years, infrared rays have been used as a heating means in place of the heater by shortening the heat treatment time for shallowing the diffusion layer, heat treatment in a closed space for keeping an object to be cleaned, and single-wafer heat treatment by increasing the diameter of the wafer. Radiation has come to be used.
【0003】[0003]
【発明が解決しようとする課題】ところが、放射線を用
いた場合、被処理物のみならず、被処理物周辺の治具,
材料まで加熱される。その結果、加熱された周辺材料か
らの被処理物への輻射により被処理物の昇温,降温が短
時間に出来ない、加熱された周辺材料から被処理物が汚
染される等の問題がある。However, when radiation is used, not only the object to be processed but also a jig around the object to be processed,
The material is heated. As a result, there is a problem that the temperature of the object to be processed cannot be raised or lowered in a short time due to radiation from the heated peripheral material to the object to be processed, and the object to be processed is contaminated from the heated peripheral material. .
【0004】本発明の目的は被処理物周辺の治具や材料
の加熱を防止した熱処理装置を提供することにある。An object of the present invention is to provide a heat treatment apparatus which prevents heating of jigs and materials around the object to be treated.
【0005】[0005]
【課題を解決するための手段】本発明の熱処理方法及び
装置は、上記目的を達成するために、被処理物を赤外線
を透過する材料で覆う。また、被処理物の支持台には赤
外線を透過する材料を用いる。In order to achieve the above object, the heat treatment method and apparatus of the present invention cover an object to be processed with a material that transmits infrared rays. A material that transmits infrared rays is used for the support base of the object to be processed.
【0006】[0006]
【作用】被処理物周辺の治具,材料を赤外線を透過する
材料で作ることにより、被処理物周辺の治具,材料に赤
外線が照射されても、これらの材料の温度上昇が少な
く、被処理物の昇温,降温時間の短時間化が図られる。
また、これら被処理物周辺材料の温度上昇が少ないた
め、周辺材料から被処理物への汚染が少ない。By making the jigs and materials around the object to be processed from materials that transmit infrared rays, even if the jigs and materials around the object to be processed are irradiated with infrared rays, the temperature rise of these materials is small and The time for raising and lowering the temperature of the processed material can be shortened.
Moreover, since the temperature rise of the peripheral material of the object to be processed is small, the contamination of the object to be processed from the peripheral material is small.
【0007】[0007]
【実施例】(実施例1)図1に本発明の断面図を示す。
フッ化カルシウム製チューブ2中にフッ化カルシウム製
支持台3を用いて被処理物1を支持し、ガス導入口5か
ら酸素,窒素,アルゴン等のガスを供給し、赤外線ラン
プ4により被処理物を加熱処理する。本発明のチューブ
や支持台は、フッ化カルシウムが赤外線を透過すること
により、チューブや支持台を石英で作った場合に比べ温
度上昇が少なく、被処理物の昇温,降温が石英に比べ約
1/2と短時間に出来た。また、周辺材料から被処理物
へのFe,Cr,Ni等の金属汚染は見られなかった。EXAMPLE 1 FIG. 1 is a sectional view of the present invention.
An object to be processed 1 is supported in a tube 2 made of calcium fluoride using a support base 3 made of calcium fluoride, and a gas such as oxygen, nitrogen, or argon is supplied from a gas inlet 5, and an object to be processed is set by an infrared lamp 4. Is heat treated. The tube or support of the present invention has a lower temperature rise than calcium fluorescein which is transmitted through the infrared rays of calcium fluoride, and the temperature rise and fall of the object to be treated are about the same as quartz. It was able to be completed in 1/2 time. Further, metal contamination of Fe, Cr, Ni, etc. from the peripheral materials to the object to be treated was not seen.
【0008】(実施例2)図2に、実施例1の支持台を
支持アーム6にした場合の断面図を示す。被処理物の取
り付け,取り出しに於いてチューブと支持台が接触せず
パーティクルの発生が少なかった。(Embodiment 2) FIG. 2 is a sectional view showing a case where the support base of Embodiment 1 is used as the support arm 6. There was little particle generation because the tube and the support did not come into contact with each other when attaching or removing the object to be processed.
【0009】(実施例3)図3に本発明の第三の実施例
を示す。本実施例ではフッ化カルシウム製容器2中にフ
ッ化カルシウム製支持台3を用いて被処理物1を支持す
る。本容器は、被処理物を処理するために必要なガスで
充たしたり、或いは容器内部のガスを排気することが出
来る。これにより、被処理物の雰囲気(酸化性,不活
性,減圧など)を容易に制御出来る。(Embodiment 3) FIG. 3 shows a third embodiment of the present invention. In this embodiment, the object 1 to be treated is supported in a calcium fluoride container 2 using a calcium fluoride support base 3. The container can be filled with a gas necessary for processing the object to be processed, or the gas inside the container can be exhausted. This makes it possible to easily control the atmosphere (oxidation, inertness, reduced pressure, etc.) of the object to be processed.
【0010】(実施例4)図4に実施例3のフッ化カル
シウム製容器2の外側に金,アルミニウム等の赤外線反
射膜7を塗布した場合の断面図を示す。赤外線ランプか
ら放出された赤外線が容器の外に逃げるのを抑制し、被
処理物が効率良く加熱された。赤外線反射膜の替りに赤
外線反射板を用いた場合にもほぼ同様の結果が得られ
た。(Embodiment 4) FIG. 4 is a sectional view showing the case where an infrared reflection film 7 of gold, aluminum or the like is applied to the outside of the calcium fluoride container 2 of Embodiment 3. The infrared rays emitted from the infrared lamp were suppressed from escaping out of the container, and the object to be processed was efficiently heated. Similar results were obtained when an infrared reflecting plate was used instead of the infrared reflecting film.
【0011】(実施例5)図5に、フッ化カルシウム製
容器2の内面と支持台3の表面を二酸化珪素で被覆した
場合の断面図を示す。赤外線ランプから放出された赤外
線は容器内面に被覆した二酸化珪素に一部吸収されるが
二酸化珪素の厚みが小さいのでこれによる損失は少な
く、被処理物は赤外線ランプによって効率良く加熱され
た。また、化学気相成長法やスパッタリング法等により
不純物の少ない高純度の二酸化珪素で容器や支持台を被
覆することにより、フッ化カルシウム材料自身からの被
処理物の汚染も抑制され、よりクリーンなプロセスを構
築出来る。被覆する二酸化珪素の膜厚は汚染防止の観点
からは厚い方が良いが、赤外線吸収の観点からは薄い方
が良い。実験の結果、二酸化珪素の被覆膜厚が0.5 な
いし5μmであればこの目的を達成出来ることが分かっ
た。(Embodiment 5) FIG. 5 is a sectional view showing a case where the inner surface of the calcium fluoride container 2 and the surface of the support base 3 are coated with silicon dioxide. The infrared rays emitted from the infrared lamp were partially absorbed by the silicon dioxide coated on the inner surface of the container, but the loss due to the small thickness of the silicon dioxide was small, and the object to be treated was efficiently heated by the infrared lamp. In addition, by coating the container and the support with high-purity silicon dioxide containing few impurities by chemical vapor deposition, sputtering, etc., contamination of the object to be treated from the calcium fluoride material itself is suppressed, and a cleaner environment is obtained. You can build a process. The film thickness of the silicon dioxide to be coated is preferably thick from the viewpoint of preventing contamination, but is preferably thin from the viewpoint of infrared absorption. As a result of experiments, it has been found that this object can be achieved if the coating thickness of silicon dioxide is 0.5 to 5 μm.
【0012】上記実施例ではチューブ,容器,支持台,
支持アーム等の赤外線を透過する材料としてフッ化カル
シウムを用いたが、赤外線を透過する材料として、例え
ばフッ化マグネシウムなど他の材料を用いても良い。In the above embodiment, the tube, the container, the support,
Although calcium fluoride was used as the material that transmits infrared rays such as the support arm, other material such as magnesium fluoride may be used as the material that transmits infrared rays.
【0013】[0013]
【発明の効果】本発明によれば、被処理物周辺の治具,
材料を赤外線を透過する材料で作ったことにより、被処
理物周辺の治具,材料の温度上昇が少なく、被処理物の
昇温,降温を短時間に行うことが出来る。また、これら
被処理物周辺材料の温度上昇が少ないため、周辺材料か
ら被処理物への汚染を少なく出来る。According to the present invention, the jig around the object to be processed,
Since the material is made of a material that transmits infrared rays, the temperature of the jig and the material around the object to be processed does not rise, and the temperature of the object to be processed can be raised and lowered in a short time. Further, since the temperature rise of the peripheral material of the object to be processed is small, the contamination of the object to be processed from the peripheral material can be reduced.
【図1】本発明の一実施例の断面図。FIG. 1 is a sectional view of an embodiment of the present invention.
【図2】本発明の第二の実施例の断面図。FIG. 2 is a sectional view of a second embodiment of the present invention.
【図3】本発明の第三の実施例の断面図。FIG. 3 is a sectional view of a third embodiment of the present invention.
【図4】本発明の第四の実施例の断面図。FIG. 4 is a sectional view of a fourth embodiment of the present invention.
【図5】本発明の第五の実施例の断面図。FIG. 5 is a sectional view of a fifth embodiment of the present invention.
1…被処理物、2…チューブ,容器、3…支持台、4…
赤外線ランプ、5…ガス導入口、6…支持アーム、7…
赤外線反射膜、8…二酸化珪素膜。1 ... Object to be treated, 2 ... Tube, container, 3 ... Supporting base, 4 ...
Infrared lamp, 5 ... Gas inlet, 6 ... Support arm, 7 ...
Infrared reflecting film, 8 ... Silicon dioxide film.
フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 H01L 21/324 D (72)発明者 大湯 静憲 東京都国分寺市東恋ケ窪1丁目280番地 株式会社日立製作所中央研究所内Continuation of front page (51) Int.Cl. 6 Identification number Reference number in the agency FI Technical indication location H01L 21/324 D (72) Inventor Shizuka Oyu 1-280 Higashi Koikeku, Kokubunji, Tokyo Hitachi Central Research Institute In-house
Claims (4)
において、前記被処理物を挿入する容器或いは前記被処
理物を支持する支持台を赤外線を透過する材料で形成し
たことを特徴とする熱処理装置。1. An apparatus for heat-treating an object to be processed using infrared rays, characterized in that a container for inserting the object to be processed or a support for supporting the object to be processed is formed of a material which transmits infrared rays. Heat treatment equipment.
る容器の内面或いは前記被処理物を支持する支持台の表
面を二酸化珪素で被覆した熱処理装置。2. The heat treatment apparatus according to claim 1, wherein the inner surface of the container into which the object to be processed is inserted or the surface of a support table that supports the object to be processed is coated with silicon dioxide.
膜厚を0.5 ないし5μmとした熱処理装置。3. The heat treatment apparatus according to claim 2, wherein the film thickness of the silicon dioxide to be coated is 0.5 to 5 μm.
る材料はフッ化カルシウム,フッ化マグネシウムのいず
れかを含む熱処理装置。4. The heat treatment apparatus according to claim 1, wherein the material that transmits infrared rays contains either calcium fluoride or magnesium fluoride.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31011993A JPH07161653A (en) | 1993-12-10 | 1993-12-10 | Heat-treating device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31011993A JPH07161653A (en) | 1993-12-10 | 1993-12-10 | Heat-treating device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH07161653A true JPH07161653A (en) | 1995-06-23 |
Family
ID=18001411
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP31011993A Pending JPH07161653A (en) | 1993-12-10 | 1993-12-10 | Heat-treating device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH07161653A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007221076A (en) * | 2006-02-20 | 2007-08-30 | Sharp Corp | Device and method for vapor phase epitaxial growth |
JP2011071464A (en) * | 2009-02-05 | 2011-04-07 | Tokyo Electron Ltd | Method of heating focus ring, plasma etching apparatus, and plasma etching method |
US8858753B2 (en) | 2009-02-05 | 2014-10-14 | Tokyo Electron Limited | Focus ring heating method, plasma etching apparatus, and plasma etching method |
-
1993
- 1993-12-10 JP JP31011993A patent/JPH07161653A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007221076A (en) * | 2006-02-20 | 2007-08-30 | Sharp Corp | Device and method for vapor phase epitaxial growth |
JP4641268B2 (en) * | 2006-02-20 | 2011-03-02 | シャープ株式会社 | Vapor growth apparatus and vapor growth method |
JP2011071464A (en) * | 2009-02-05 | 2011-04-07 | Tokyo Electron Ltd | Method of heating focus ring, plasma etching apparatus, and plasma etching method |
US8858753B2 (en) | 2009-02-05 | 2014-10-14 | Tokyo Electron Limited | Focus ring heating method, plasma etching apparatus, and plasma etching method |
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