JP3281525B2 - Gas component removal processing apparatus and cluster tool apparatus using the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a gas component removing apparatus for removing a gas component adhering to a surface of, for example, a semiconductor wafer, and a cluster tool apparatus using the same.

[0002]

2. Description of the Related Art In general, a semiconductor device tends to have a multilayer wiring structure in response to recent demands for higher density and higher integration. In this case, a lower device and an upper aluminum wiring are required. Embedding technology such as a contact hole as a connection portion with the via and a via hole as a connection portion between the lower aluminum wiring and the upper aluminum wiring has become important in order to make an electrical connection between them. It is preferable to use an inexpensive and highly conductive material, for example, aluminum, for filling the contact holes and via holes, and it is highly directional to eliminate the occurrence of voids due to the technical restriction of filling holes. CVD (Chemi) with good step coverage instead of film formation by sputtering
It is desired to form a film by cal vapor deposition. Examples of such a metal thin film forming apparatus include JP-A-6-267951 and JP-A-6-267951.
An apparatus disclosed in, for example, Japanese Patent No. 283446 is known.

In order to form an aluminum-CVD film,
Various organic metal gases containing Al are used as the processing gas. Generally, DMAH (dimethylaluminum hydride) is used. This DMAH has a very high viscosity of about 8000 to 10000 cp (centipoise) at room temperature and is in a syrup form. It is a substance that is extremely difficult to handle because it reacts violently and ignites.

[0004]

When an aluminum film is formed on a semiconductor wafer, a natural oxide film adhering to the surface of the semiconductor wafer is removed from the aluminum film in order to maintain high electrical characteristics of the aluminum film. Before the deposition of
For example, it must be removed by etching or the like.
When performing pre-etching for removing a natural oxide film, generally, when a blanket aluminum film is formed in a film formation in a later step, no problem occurs because, for example, H ₂ gas or the like is used as an etching gas. In the case of forming a selective aluminum film such as filling a hole in a film formation in a later process, for example, a BCl ₃ gas or the like is used as an etching gas. In this case, among the gas components, Cl ions in particular cause corrosion of the wafer surface and cause deterioration of the electrical characteristics. Therefore, this gas component is surely removed from the wafer surface before aluminum film formation. Must.

However, the binding energy between the gas component and the wafer surface is quite high, and the gas component bonded to the wafer surface can be completely removed only by evacuating the etching apparatus to a high vacuum. There was a problem that can not be. In particular, under the current situation where realization of an aluminum film formation process by thermal CVD is desired, realization of complete removal of the above-described etching gas from the wafer surface in pre-etching which is a pre-process is strongly desired. The present invention has been devised in view of the above problems and effectively solving them. An object of the present invention is to provide a gas component removal processing apparatus capable of substantially completely removing gas components attached to the surface of an object to be processed and a cluster tool apparatus using the same.

[0006]

According to the present invention, there is provided a gas component removing apparatus for removing a gas component adhering to a surface of an object to be processed. A processing container made to be able to be evacuated and having a mounting table for mounting the inside, a heating means for heating the processing object on the mounting table, and irradiating the processing object on the mounting table with ultraviolet rays. and a UV irradiation means for exciting the gas components Te, said ultraviolet light irradiation means, the object to be processed
To make the amount of ultraviolet rays irradiated to the body uniform over the surface
It is configured to have a filter means for

Thus, the object to be processed mounted on the mounting table in the processing vessel is heated by the heating means and at the same time its surface is irradiated by ultraviolet rays from the ultraviolet irradiation means. As a result, various gas components adhering to the surface of the object to be processed are excited to a high energy level, are disconnected from the surface of the object to be processed, are separated, and are removed. Ma
In addition, the intensity of the ultraviolet light from the ultraviolet irradiation means has a predetermined distribution.
However, because of the provision of filter means, this distribution
It is possible to make it uniform in the in-plane direction of the body,
In-plane uniformity can be ensured. Here, an ultraviolet ray detecting means for detecting the intensity of the ultraviolet ray is provided, and when the ultraviolet ray intensity detected by the detecting means falls below a predetermined value, the operator is notified by the notifying means to that effect,
Replace UV lamp. As a result, the intensity of the ultraviolet light at a certain level or more can be maintained at all times, and the incomplete processing can be eliminated.

[0008] Further, the such gas component removal processing device, a thin film deposition apparatus for forming a deposition on the surface of the object,
By connecting via a common transfer chamber which can be evacuated, the object to be processed after the gas component removal processing can be directly introduced into the film forming apparatus without exposing the object to the atmosphere. A metal film, for example, an aluminum film can be formed by thermal CVD without attaching a natural oxide film or a new gas.

[0009]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a gas component removal processing apparatus according to the present invention and a cluster tool apparatus using the same will be described below in detail with reference to the accompanying drawings. FIG. 1 is a schematic plan view showing a cluster tool device according to the present invention, FIG. 2 is a configuration diagram showing a gas component removal processing device, FIG. 3 is a plan view showing a unit mounting plate of a heater unit, and FIG. FIG. 5 is a side view showing an ultraviolet irradiation unit, FIG. 6 is a plan view showing the ultraviolet irradiation unit, and FIG. 7 is a configuration diagram showing a film forming apparatus. In this embodiment, a case where a semiconductor wafer is used as an object to be processed and an aluminum film is formed as a metal film on the surface by thermal CVD processing will be described as an example.

As shown in FIG. 1, this cluster tool device 2 has a common transfer chamber 4 formed in the shape of an octagonal container made of, for example, aluminum at its center.
First and second cassette chambers 6 and 8, water removal treatment device 1
0, gas component removal processing apparatus 12, oxide film removal processing apparatus 14, first and second film formation processing apparatuses 16, 1 according to the present invention.
8 and the cooling processing device 20 are connected via gate valves G1 to G8 which can be opened and closed, respectively.

The moisture removing apparatus 10 is a processing apparatus for heating a semiconductor wafer to remove moisture and the like adhering to the surface thereof. The oxide film removing apparatus 14 is formed on the wafer surface after removing the moisture. This is a processing apparatus for removing a native oxide film by etching, and uses, for example, H ₂ gas (in the case of a blanket) or BCl ₃ gas (in the case of a selective) as an etching gas depending on the type of aluminum film formed in a later step. Gas component removal treatment apparatus 1 according to the present invention
Reference numeral 2 denotes a processing apparatus for completely separating and removing the gas components remaining on the wafer surface by heating or ultraviolet irradiation when a harmful gas is used in the above-described etching. The cooling apparatus 20 is a processing apparatus for performing aluminum CVD film formation, and is a processing apparatus for cooling a wafer after film formation to a handling temperature.
In the first and second cassette chambers 6, 8, gate doors GD1, GD2 for loading / unloading a cassette C capable of accommodating, for example, 25 wafers W are provided so as to be openable and closable, respectively. , 8 are provided with a cassette table (not shown) so as to be able to move up and down. The cassette chambers 6 and 8 can be supplied with an inert gas, for example, N ₂ gas, and can be evacuated.

In the common transfer chamber 4, a rotation positioning mechanism 22 for positioning the wafer W loaded therein, and a transfer arm 24 composed of a multi-joint arm mechanism capable of bending, stretching and rotating while holding the wafer W. The wafers can be loaded and unloaded between devices and between rooms by bending, stretching and rotating.
The common transfer chamber 4 includes a gas supply system 19 for supplying an inert gas, for example, N ₂ gas, and a turbo molecular pump 21 for example.
And a vacuum pumping system 25 with a dry pump 23 interposed in the middle, so that the inside can be evacuated to a high vacuum. The water removing apparatus 10 is provided with a mounting table (not shown) having a heater in a processing container which can be evacuated, and the wafer W is mounted on the mounting table at, for example, 300 ° C. The heating is performed to the extent that water and the like adhering to the wafer surface are removed.

The above-described oxide film removal processing apparatus 10 includes, for example, R
The apparatus is configured as an IE (reactive ion etching) plasma apparatus, which generates plasma using a high frequency of 13.56 MHz, for example, and removes a natural oxide film adhered to the wafer surface by etching. Here, when a blanket aluminum film is formed in a later step, an H ₂ gas is used as an etching gas. When a selective aluminum film is formed, for example, a BCl ₃ gas is used as an etching gas. When using the BCl ₃ gas, when the BCl ₃ gas is performed an aluminum film remain attached to the wafer surface, because the electrical properties deteriorate, above in order to completely remove the BCl ₃ gas The gas component removal processing apparatus 12 according to the present invention is used. FIG.
As shown in FIG. 1, the gas component removal treatment apparatus 10 of the present invention has a treatment vessel 26 formed into a cylindrical shape with a bottom by, for example, aluminum. The ceiling is opened, and a ceiling plate 28 is The screw 30 allows the airtight attachment and detachment. For example, an O-ring 32 for ensuring the sealing performance is interposed in the mounting portion of the ceiling plate 28.

A mounting table mounting step 34 is provided on a lower side wall in the processing vessel 26, and three screw hole forming sections 36 protruding in the radial direction at the peripheral edge as shown in FIG. Unit mounting plate 3 made of, for example, stainless steel having
8 is removably fixed by a screw 42 inserted through a screw hole 35 formed therein, and a mounting table 40 made of, for example, graphite whose surface is coated with SiC is provided on the unit mounting plate 38. The wafer W is placed on the upper surface. The mounting plate 38 is provided with three lifter pin holes 43 for inserting lifter pins to be described later. A heating means 44 made of carbon, for example, the entire surface of which is SiC-coated, that is, a heater 44 is embedded in substantially the entire upper surface of the mounting table 40, and heats the wafer W to a predetermined temperature, for example, about 300 ° C. I am getting it.

Further, lifter pins 46 are provided which penetrate the unit mounting plate 38 and the mounting table 40 in the up-down direction and are capable of moving up and down in the up-down direction. It can be moved up and down. Normally, three lifter pins 46 are provided to support the back surface of the wafer at three points. A terminal unit mounting hole 47 having a stepped opening is formed in the bottom 26A of the processing container 26, and a sealing member 49 is interposed therebetween so that the mounting hole 47 is airtightly closed. A terminal unit 48 is detachably attached by screws 50 from below the container bottom 26A.
The terminal unit 48 is provided with two insulated lead-out terminals 52, 52 penetrating into and out of the container. These terminals 52, 52 and the lower part of the unit mounting plate 38 are provided. Heater terminals 54, 54 electrically connected to the heater 44 are connected by wiring 56.

The lower ends of the lead-out terminals 52, 52 are connected to a heater power supply 60 through wirings 58, 58 detachably mounted by screws 62. W is heated. The terminal unit 48 and the unit mounting plate 38 are connected to connecting rods 64 and 66 extending from opposite sides with screws 6.
By connecting by 8, it is connected integrally. Therefore, as shown in FIG. 4, by removing the screw 42 fixing the unit mounting plate 38 to the container side and the screw 50 fixing the terminal unit 48 to the bottom 26A side, the mounting table 40 including the heater 44 is removed. And the terminal unit 48 can be integrally removed from the container 26. Further, a cooling jacket 70 for flowing, for example, cooling water as a coolant to cool the mounting table mounting step 34 of the container 26 is provided.
Is provided. In addition, an inert gas,
For example, a gas introduction nozzle 72 for introducing N ₂ gas or H ₂ gas into the container and an exhaust port 73 for exhausting the atmosphere in the container are provided. The exhaust port 73 is provided with an on-off valve 80, a turbo molecular pump 74, A vacuum exhaust system 78 provided with a dry pump 76 and the like is connected. In addition, a wafer transfer port 82 is provided on the other side wall, and the gate valve G4 for communicating with and shutting off the common transfer chamber 4 is provided here.

The ceiling portion 28 of the processing container 26 is provided with an ultraviolet irradiation means 84 having the following features, which is a feature of this embodiment. Specifically, a large-diameter ultraviolet transmitting hole 86 is provided in the ceiling portion 28 so as to be opened, and a transmitting plate 88 made of a material transparent to ultraviolet light, for example, quartz, is provided in the transmitting hole 86. It is provided airtight via a seal member 90. A lamp housing box 92 is attached to and fixed to the upper surface of the ceiling with screws 96 via a pressing member 94 and a sealing member 100 so as to cover the entire upper part of the transmission plate 88, and holds the inside of the container airtightly. Then, an ultraviolet lamp 98 is housed in the lamp housing box 92.

As shown in FIGS. 5 and 6, the ultraviolet lamp 98 is bent in a meandering manner, for example, by bending it three times.
It is mounted and fixed to a lamp mounting plate 102 provided to extend over the inside. By using the lamp 98 bent in this manner, the number of lamps 98 is small, that is, in this embodiment, two lamps 98 cover the entire surface of the wafer. still,
Of course, the number of lamps is not limited to two. The wavelength of the ultraviolet light UV emitted from the ultraviolet lamp 98 is set to, for example, about 254 nm, and is set to a frequency that is most likely to cause excitation of gas components, particularly Cl ions.

Above and beside each UV lamp 98,
A reflecting mirror 104 made of, for example, aluminum is provided so as to surround these components, and is fixed to a support plate 106 extending from the inner wall surface of the lamp housing box 92. It turns to the side. Further, a plurality of cooling fans 110, two in the illustrated example, which are rotationally driven by a rotary motor 108 are provided on the ceiling portion of the lamp housing box 92, and a ventilation hole 112 is provided on a side wall of the housing box 92. By rotating the cooling fan 110, the warmed air inside is discharged from the ventilation hole 112, and the ultraviolet lamp 98 can be cooled.

The lamp mounting plate 102 is provided with an ultraviolet detector 114 as an ultraviolet detecting means for detecting the intensity of the ultraviolet light emitted from each lamp 98. Is input to the determination unit 116 including, for example, a microcomputer.
The determining unit 116 determines whether the lamp is good or not by comparing the detected value with a predetermined set value. The determining unit 116 is connected to a notifying unit 117 including, for example, a display, and notifies an operator of the determination result of the determining unit 116 via the notifying unit 117.

The ultraviolet detectors 114 are provided in a number corresponding to the number of the ultraviolet lamps 98, and detect the ultraviolet intensity of each lamp 98. Here, the specification of the ultraviolet lamp 98 is as follows.
For example, an input power supply having a frequency of 100 Hz at 50 Hz, a current of 2.5 A, and a light intensity of about 30 mW / cm ² is used. As described above, the semiconductor wafer W is attached to the wafer surface by being irradiated with the ultraviolet rays UV from the lamp 98 and simultaneously heated to a predetermined temperature, for example, about 300 ° C. by the heater 44 provided on the mounting table 40. It can be separated from the wafer surface by exciting Cl ions or the like. In this case, the N ₂ gas and the H ₂ gas can be supplied from the gas introduction nozzle 72 into the processing container 26 as needed.

Next, based on FIG.
18 will be described. Both film forming apparatuses 16 and 18
Since the configuration is exactly the same, the first film forming apparatus 16 will be described as a representative here as an example, and the description of the configuration of the second film forming apparatus 18 will be omitted. Film forming apparatus 1
Reference numeral 6 denotes a thermal CVD film forming apparatus, which has a processing container 118 formed of, for example, aluminum into a cylindrical shape. A feed line insertion hole 120 is formed at the center of the bottom 118A of the processing container 118, and a peripheral portion is provided with a vacuum pump 126, for example, a vacuum pumping system 126 provided with a turbo molecular pump 122 and a dry pump 124. A connected exhaust port 130 is provided, and the inside of the container can be evacuated.

A disk-shaped mounting table 132 made of, for example, alumina is provided in the processing container 118.
A cylindrical leg 134 extending downward is provided at the center of the lower surface of the lower surface 32.
The lower end of the leg 134 is air-tightly attached and fixed to the periphery of the feeder line insertion hole 120 of the container bottom 118A by using a bolt 140 or the like with a sealing member 138 such as an O-ring interposed therebetween. You.

A resistance heating element 142 made of, for example, carbon coated with SiC is embedded in the entire upper surface of the mounting table 132, and a semiconductor wafer W as an object to be processed mounted on the upper surface side is mounted thereon. It can be heated to a desired temperature. On the upper surface of the mounting table 132, there is provided a thin ceramic electrostatic chuck 144 in which a conductive plate (not shown) such as copper is embedded. The Coulomb force generated by the electrostatic chuck 144 causes The upper surface holds the wafer W by suction. still,
Instead of the electrostatic chuck 144, a mechanical clamp may be used to hold the wafer W, or it may not be provided. An insulated lead wire 146 is connected to the resistance heating element 142.
Is drawn out through the inside of the cylindrical leg 134 and through the feeder line insertion hole 120, and is connected to the feeder 150 via the open / close switch 148. Further, an insulated lead wire 152 is connected to a conductive plate (not shown) of the electrostatic chuck 144, and this lead wire 152 is also drawn out through the inside of the cylindrical leg 134 and the feed line insertion hole 120, It is connected to a high-voltage DC power supply 156 via an open / close switch 154.

A plurality of lifter holes 158 are provided at predetermined positions in the periphery of the mounting table 132 and the electrostatic chuck 144 so as to penetrate in the vertical direction. The wafer lifter pins 160 are housed therein, and the lifter pins 160 are moved up and down by an elevating mechanism (not shown) when loading and unloading the wafer W.
The wafer W is lifted or lowered. Generally, three such wafer lifter pins 160 are provided corresponding to the peripheral portion of the wafer.

A ceiling plate 164 integrally provided with a shower head 162 is hermetically attached to the ceiling of the processing container 118 via a sealing member 166 such as an O-ring. Mounting table 132
Are provided so as to face each other so as to cover substantially the entire upper surface of the. The shower head 162 is for introducing a processing gas into the processing container 118 in a shower shape.
A large number of ejection holes 168A for ejecting the processing 7 are formed on the ejection surface 168 on the lower surface of the nozzle 62.

The ceiling plate 164 has a shower head 162
Is provided with a gas introduction port 170 for introducing a processing gas, and the introduction port 170 is connected to a supply passage 172 for flowing the processing gas. A first diffusion plate 176 having a large number of diffusion holes 174 is provided in the shower head 162 for the purpose of diffusing the processing gas supplied from the supply passage 172. Plates 178 are each provided.

On the side wall of the processing container 118, for example, a cooling jacket 180 through which a coolant flows for cooling the wall surface is provided.
Is provided, and hot water of, for example, about 50 ° C. is made to flow as a coolant. The container 118
A part of the side wall of the wafer is provided with a wafer transfer port 182,
Here, the gate valve G6 for communicating with and shutting off the common transfer chamber 4 is provided.

On the other hand, the processing gas used for aluminum CVD is obtained by evaporating DMAH.
AH has a high viscosity of 8000 to 10000 cp at room temperature and is in the form of a syrup, so it is difficult to supply AH under high-precision flow control. Therefore, in the present embodiment, the raw material liquid 182 made of DMAH is stored in the tank 18.
4, and the end of the supply passage 172 is immersed in the raw material liquid 182. On the liquid level in the tank 184, an end of a pressure feed pipe 188 connected to an Ar cylinder 186 filled with Ar gas at a pressure of, for example, about 3 kgf / cm ² is positioned. The liquid is pumped.

In the middle of the supply passage 172, a mass flow controller 190 for liquid and a vaporizer 192 using H ₂ gas as a vaporizing gas and a carrier gas are sequentially provided. It is designed to be supplied inside. In the supply passage 172 downstream of the vaporizer 192, for example, a tape heater 194 (shown by a broken line in the drawing) for preventing reliquefaction is provided, and this is heated to a predetermined temperature, for example, about 65 ° C. ing. The cooling processing apparatus 20 is provided with a mounting table (not shown) having a cooling jacket therein, and is an apparatus for lowering the temperature of the wafer W, which has been heated by the film forming process, to a predetermined handling temperature.

Next, the operation of the embodiment constructed as described above will be described. First, the overall flow of the semiconductor wafer W will be described with reference to FIG. First, since the aluminum film easily reacts with air or moisture to form an oxide film, each of the processing apparatuses 10, 12, and 1 including the common transfer chamber 4 is formed.
When not used, 4, 16, 18 and 20 are maintained at a high vacuum of, for example, about 5 × 10 ⁻⁶ Torr as a base pressure to prevent formation of a natural oxide film. When the unprocessed semiconductor wafer W is loaded into the first cassette chamber 6 through the gate door 1 in a state of being accommodated in the cassette C from the outside, it is sealed, and the inside of the first cassette chamber 6 has the above-described base pressure. Vacuum until When the base pressure is reached,
The gate valve G1 is opened, the transfer arm 24 in the common transfer chamber 4 maintained at the base pressure in advance is extended, and one unprocessed wafer W is taken out.
The alignment is performed by detecting the orientation flat of the wafer by 2. Wafer W after alignment
Is transported again through the gate valve G3, which has been opened using the transfer arm 24, into the moisture removal processing apparatus 10 which has been previously set to the base pressure, where the wafer W is heated and adheres to the surface of the wafer. Vaporized moisture and the like are removed.

Next, the wafer W from which water has been removed is carried into the oxide film removing apparatus 14 which is maintained at the base pressure in advance via the gate valve G5, and adheres to the wafer surface by etching. Remove the native oxide film.
Here, when a selective aluminum film is formed in a later step, for example, BCl ₃ is used as an etching gas.
When a gas is used to form a blanket aluminum film, for example, H ₂ gas is used as an etching gas. When BCl ₃ gas is used as an etching gas, Cl ions and B ions, particularly Cl ions, have an adverse effect on the electrical characteristics of the aluminum film, so that these ions must be completely removed from the wafer surface. Therefore, the wafer W after etching using BCl ₃ gas is used.
Is then carried through the gate valve G4 into the gas component removal processing apparatus 12 according to the present invention, which has been preliminarily adjusted to the base pressure, where the Cl ions are excited by heating and UV irradiation, and these are excited to the wafer surface. And removed from it.

Next, the wafer W from which the gas components have been removed is introduced through the gate valve G6 or G7 into the first or second film forming processing apparatus 16 or 18 which has been previously set to the base pressure. Thus, the two film forming apparatuses 16,
The reason for providing 18 is to improve the throughput in view of the time required for the film forming process. Also, if in the previous oxidation removal equipment 14 using the H ₂ gas rather than BCl ₃ gas as an etching gas, a wafer without going through the gas component removal processing unit 12, directly the first or the second It is carried into the film forming apparatus. For example, a gas obtained by vaporizing DMAH (dimethyl aluminum hydride) is used as a processing gas for the wafer carried into the film forming apparatus 16 or 18, and an aluminum film is formed at a predetermined temperature by the CVD process. Will be.

Next, the wafer W after the formation of the aluminum film is carried through the gate valve G8 into the cooling processing device 20, which is maintained at the base pressure in advance, and is cooled to a predetermined handling temperature. . Then, the processed wafer W is then transferred to the cassette C in the second cassette chamber 8 maintained at the base pressure in advance through the gate valve G2.
Will be accommodated. In this way, unprocessed wafers are sequentially flown and processed, and during a film forming process requiring a relatively long processing time, the throughput is improved by using the vacant film forming apparatus.

Next, the gas component removing process will be described with reference to FIGS. In FIG. 2, the wafer W placed on the mounting table 40 is heated to a predetermined temperature, for example, about 300 ° C. by the heater 44, and at the same time, for example, a wavelength is emitted from the ultraviolet lamp 98 of the ultraviolet irradiation means 84 located above the wafer. Ultraviolet light of 254 nm is emitted, and this ultraviolet light is transmitted through the transmission plate 88 and irradiates the wafer surface. Due to the synergistic effect of the heating by the heater 44 and the irradiation of ultraviolet rays, gas components such as BCl ₃ molecules, B ions, and Cl ions adhering to the wafer surface are excited to a higher energy order, and this is more than the binding energy with the wafer surface. As a result, the wafer is separated from the wafer surface and sucked out of the exhaust system 78 to be removed.

At this time, the inside of the processing container 26 is set to an H ₂ gas or N ₂ gas atmosphere, and the process pressure is set to 5 m to 15 m.
It is maintained at about 0 mTorr. In this case, the processing container 2
By setting the inside of the chamber 6 to a pressure of, for example, about several tens of mTorr with H ₂ gas, the efficiency of removing Cl ions and the efficiency of preventing oxidation can be improved. Although the process time depends on the process temperature and the intensity of ultraviolet UV, when the wavelength is 254 nm and the light intensity is 30 mW / cm ² as described above, the process is performed for about 180 seconds. Here, in order to efficiently remove gas components, the heating temperature of the wafer is 150 ° C.
To 300 ° C., and the intensity of ultraviolet light is 2
It is preferably in the range of ^{0mW / cm 2 ~50mW / cm 2} ,
If it is too weak, separation of gas components will be insufficient,
If it is too strong, problems such as destruction of the transistor will occur.

When irradiating the ultraviolet rays UV, the ultraviolet rays radiated above and to the side of the ultraviolet lamp 98 are reflected by the reflecting mirror 104 surrounding the lamp 98 and directed to the wafer surface side. Can be kept high. Further, the intensity of the ultraviolet light UV emitted from each lamp 98 is detected by an ultraviolet detector 114 provided corresponding to each lamp 98, and the detected value is compared with a predetermined reference value by a determination unit 116. Is done. As a result of the determination, when the detected value becomes smaller than the reference value, the fact is displayed on the notifying means 117 to notify the operator, and the operator recognizes this and reduces the amount of ultraviolet light whose amount has decreased due to aging or the like. Replace the lamp with a new UV lamp. This makes it possible to always emit a certain amount or more of ultraviolet rays, not only to ensure the uniformity of processing between wafers, but also to eliminate incomplete gas component removal processing due to insufficient ultraviolet light, and to reduce gas from the wafer surface. The removal of the components can be performed almost reliably. still,
The notification means 117 uses a display here,
Any means that can be perceived by the operator may be used. For example, a means that appeals to the sense of sight or hearing, such as a flashing lamp or an alarm buzzer, may be used.

Here, as the ultraviolet lamp 98, for example, a lamp which is bent in a meandering shape is used, so that the number of lamps required to cover the entire surface of the wafer can be reduced, and the individual lamps are correspondingly reduced. The required number of ultraviolet detectors 114 provided correspondingly can be reduced, which can contribute to cost reduction. Further, by rotating and driving the cooling fan 110 provided on the ceiling of the lamp housing box 92, the warmed air in the housing box 92 is discharged to the outside through the ventilation hole 112, so that the ultraviolet lamp 98 It is cooled and does not overheat.

When the maintenance of the gas component removal processing apparatus 10 is performed, the unit mounting plate 38 is attached to the mounting table mounting step 34 as shown in FIG. Unscrew the screws 42 that are attached and fixed, and connect the terminal unit 48 to the container bottom 26A.
When the unit mounting plate 38 is pulled up with the screw 50 attached and fixed to the
The terminal unit 48 integrally connected via the 6, 64 can also be taken out integrally. At this time, needless to say, the wiring 58 connecting the heater power supply 60 and the lead terminal 52 is removed in advance. Thus, the mounting table 40
The terminal mounting unit 38 and the terminal unit 48 for supporting the terminal unit 48 can be integrally removed, so that maintenance work of the heater 44, the mounting table 40, or the terminal unit 48 can be easily performed. Before the processing, the inside of the processing chamber 26 is maintained at a base pressure of about 5 × 10 ⁻⁶ Torr by the vacuum evacuation system 78 as described above, and a natural oxide film adheres to the surface of the loaded wafer. Has been prevented.

Next, the process of forming an aluminum film will be described with reference to FIG. In FIG. 7, the wafer W from which the gas components have been removed, mounted on the mounting table 132, is suction-held by the Coulomb force from the electrostatic chuck 144.
In this state, the wafer W is heated by the resistance heating element 142 to a predetermined process temperature, for example, 200 ° C., and at the same time, a vaporizing gas of DMAH is introduced from the shower head 162 into the processing vessel 118 as a processing gas, and the aluminum surface is formed on the wafer surface. Perform membrane. At this time, the process pressure is maintained at, for example, about 0.1 to 20 Torr, and DMAH is supplied, for example, at about 100 SCCM in gaseous terms.

When supplying the processing gas, the raw material liquid 18
2 is pumped from the tank 184 and is vaporized by the vaporizer 192 with H ₂ gas which is both a vaporized gas and a carrier gas, and the generated vaporized gas is introduced into the processing vessel 118 as described above. Further, during the film formation, the processing container 118 is used.
A coolant of, for example, about 50 ° C. is caused to flow through a cooling jacket 180 provided on a side wall of the cooling device, and is cooled to a safe temperature. Here, before the processing, the inside of the processing container 172 is maintained at a base pressure of about 5 × 10 ⁻⁶ Torr by the vacuum exhaust system 179 as described above, and a natural oxide film adheres to the surface of the loaded wafer. Is preventing that. After the film formation, the vacuum is again applied to a base pressure of 5 × 10 ⁻⁶ Torr. Therefore, it is possible to minimize the attachment of the natural oxide film to the aluminum film immediately after the film formation.

As shown in FIG. 8A, the ultraviolet lamp 98 used in the gas component removing apparatus 10 of the above embodiment generally has a greater intensity of ultraviolet rays at the center of the lamp 98 than at the periphery thereof. Therefore, more ultraviolet rays are irradiated to the center side of the wafer W. In order to prevent this, as shown in FIG. 8A, a filter means 196 made of, for example, an ultraviolet semi-transmissive material having a diameter smaller than the diameter of the wafer W is provided at a central portion below the ultraviolet lamp 98. ,
The amount of ultraviolet light at the center of the wafer may be slightly suppressed. According to this, as shown in FIG. 8B, the intensity of the ultraviolet light at the central portion of the wafer is slightly suppressed, and as a result, it is possible to irradiate substantially uniform intensity of the ultraviolet light on the wafer surface.
The uniformity of the processing in the wafer surface can be further improved. The diameter and thickness of the filter means 196 are designed depending on the diameter of the wafer to be processed and the lamp intensity, and an appropriate value is determined so that the intensity distribution of the ultraviolet rays becomes substantially the same over the wafer surface.

The metal film is not limited to the case of forming an aluminum film, but may be formed of another film such as Ti, T
The present invention can also be applied to the case of forming a film of iN, W, Cu, or the like. Further, the present invention is not limited to the case where the film is formed on a semiconductor wafer, and is of course applicable to the case where the film is formed on another object to be processed, for example, an LCD substrate or a glass substrate.

[0044]

As described above, according to the gas component removing apparatus and the cluster tool apparatus using the same according to the present invention,
The following excellent functions and effects can be exhibited. Since the object to be processed is heated by the heating means and the surface of the object is irradiated with ultraviolet rays from the ultraviolet irradiation means,
By the synergistic effect, a gas component adhering to the surface of the object to be processed, for example, BCl _3, can be excited and efficiently separated from the surface of the object to be eliminated. Therefore, it is possible to prevent the electrical characteristics of a metal film such as an aluminum film formed on the surface from deteriorating. Also, a predetermined filter means is provided for the ultraviolet irradiation means.
Processing, which tends to increase the UV intensity
In-plane of the object to be processed by suppressing the ultraviolet intensity at the center of the body
UV intensity can be distributed to be almost uniform.
Therefore, the in-plane uniformity of the processing can be improved. In addition, by providing the ultraviolet ray detecting means and the notifying means, it is possible to know the life of the ultraviolet lamp deteriorated due to aging or the like, to prevent insufficient gas component removal processing due to insufficient ultraviolet irradiation, and to remove gas component. Processing can be performed almost reliably.

[0045] Furthermore, it is possible to reduce the number of used lamp by using an ultraviolet lamp bent deformed, Ru can contribute to cost reduction because correspondingly be the number used in the ultraviolet detecting means is also less used. Further, by incorporating such a gas component removal processing device to the cluster tool system with thin film deposition apparatus, without exposing the object to be processed after the gas component is removed to the atmosphere, it can be subjected to this metal deposition Therefore, gas and moisture do not re-adhere to the object to be processed, so that the electrical characteristics of metal film formation can be further improved.

[Brief description of the drawings]

FIG. 1 is a schematic plan view showing a cluster tool device according to the present invention.

FIG. 2 is a configuration diagram illustrating a gas component removal processing apparatus.

FIG. 3 is a plan view showing a unit mounting plate of the heater unit.

FIG. 4 is an exploded view showing a detached state of the heater unit.

FIG. 5 is a side view showing an ultraviolet irradiation unit.

FIG. 6 is a plan view showing an ultraviolet irradiation unit.

FIG. 7 is a configuration diagram illustrating a film forming apparatus.

FIG. 8 is a diagram showing an intensity distribution of ultraviolet light when a filter unit is provided.

[Explanation of symbols]

 Reference Signs List 2 Cluster tool device 4 Common transfer chamber 10 Water removal treatment device 12 Gas component removal treatment device 14 Oxide film removal treatment device 16 First film formation treatment device 18 Second film formation treatment device 20 Cooling treatment device 26 Processing container 40 Mounting table 44 Heater (heating means) 84 Ultraviolet irradiation means 85 Transmission plate 98 Ultraviolet lamp 114 Ultraviolet detector (Ultraviolet detection means) 116 Judgment unit 117 Notification means 196 Filter means W Semiconductor wafer (object to be processed)

──────────────────────────────────────────────────続 き Continuation of the front page (72) Inventor Tetsu Shimizu 2381 Kita Shimojo, Fujii-machi, Nirasaki City, Yamanashi Prefecture, Tokyo Electron Yamanashi Co., Ltd. Hei 4-214868 (JP, A) JP-A-60-76116 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) C23C 16/00-16/56 H01L 21/205 H01L 21 / 285 H02L 21/302 H01L 21/31-21/32

Claims (5)

(57) [Claims] In a gas component removal processing apparatus for removing a gas component adhering to a surface of an object to be processed, a vacuum evacuable process having a mounting table for mounting the object to be processed is provided therein. comprising a container, a heating means for heating the object to be processed on the mounting table, an ultraviolet irradiation means for ultraviolet irradiation with exciting the gas component into the workpiece on the mounting table, wherein The ultraviolet irradiation means is configured to irradiate the object to be processed with ultraviolet light.
Filter means to make the dose uniform over the surface
A gas component removal treatment apparatus characterized in that it has a gas component removal treatment apparatus. 2. The gas component removal treatment apparatus according to claim 1, wherein said ultraviolet irradiation means has a bent ultraviolet lamp. 3. An ultraviolet light detecting means for detecting the intensity of the ultraviolet light of the ultraviolet light irradiating means, and a notifying means for notifying that the detected value of the ultraviolet light detecting means has become equal to or less than a predetermined value. The gas component removal treatment apparatus according to claim 1 or 2, wherein the apparatus is configured as follows. 4. A gas component removal processing device according to either of claims 1 to 3, a thin film deposition apparatus for forming a metal film by thermal CVD on the surface of the object to be processed after the gas component removal process Are connected by a common transfer chamber capable of being evacuated. 5. The cluster tool device according to claim 4 , wherein the metal film is an aluminum film.