JPS58164135A - 収束イオンビ−ムを用いた半導体加工装置 - Google Patents
収束イオンビ−ムを用いた半導体加工装置Info
- Publication number
- JPS58164135A JPS58164135A JP57046292A JP4629282A JPS58164135A JP S58164135 A JPS58164135 A JP S58164135A JP 57046292 A JP57046292 A JP 57046292A JP 4629282 A JP4629282 A JP 4629282A JP S58164135 A JPS58164135 A JP S58164135A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- processing
- generating means
- repair
- focused ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010884 ion-beam technique Methods 0.000 title claims description 23
- 239000004065 semiconductor Substances 0.000 title claims description 21
- 238000010894 electron beam technology Methods 0.000 claims description 26
- 230000008439 repair process Effects 0.000 claims description 14
- 230000007547 defect Effects 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- 230000002950 deficient Effects 0.000 description 6
- 238000000605 extraction Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- -1 helium ions Chemical class 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Beam Exposure (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57046292A JPS58164135A (ja) | 1982-03-25 | 1982-03-25 | 収束イオンビ−ムを用いた半導体加工装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57046292A JPS58164135A (ja) | 1982-03-25 | 1982-03-25 | 収束イオンビ−ムを用いた半導体加工装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58164135A true JPS58164135A (ja) | 1983-09-29 |
| JPS6352429B2 JPS6352429B2 (enExample) | 1988-10-19 |
Family
ID=12743129
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57046292A Granted JPS58164135A (ja) | 1982-03-25 | 1982-03-25 | 収束イオンビ−ムを用いた半導体加工装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58164135A (enExample) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60211757A (ja) * | 1984-04-05 | 1985-10-24 | Hitachi Ltd | イオンビーム加工装置および表面加工方法 |
| JPS6435913A (en) * | 1987-07-31 | 1989-02-07 | Hitachi Ltd | Method and device for correcting defect of device |
| JPH01181529A (ja) * | 1988-01-12 | 1989-07-19 | Hitachi Ltd | 集束イオンビーム加工方法とその装置 |
| US6278578B1 (en) | 1990-04-16 | 2001-08-21 | Hitachi, Ltd. | Narrow track thin film head having a focused ion beam etched air bearing surface |
| JP2006194907A (ja) * | 2006-03-31 | 2006-07-27 | Hitachi Ltd | 電子線を用いた試料観察装置および方法 |
| JP2009038043A (ja) * | 2008-11-04 | 2009-02-19 | Hitachi High-Technologies Corp | 半導体の加工観察装置、および半導体の加工観察装置の操作方法 |
| JP2009037910A (ja) * | 2007-08-02 | 2009-02-19 | Sii Nanotechnology Inc | 複合荷電粒子ビーム装置及び加工観察方法 |
| DE102008045336A1 (de) * | 2008-09-01 | 2010-03-11 | Carl Zeiss Nts Gmbh | System zur Bearbeitung einer Probe mit einem Laserstrahl und einem Elektronenstrahl oder einem Ionenstrahl |
| WO2024242075A1 (ja) * | 2023-05-22 | 2024-11-28 | 浜松ホトニクス株式会社 | 顕微鏡装置 |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4938295A (enExample) * | 1972-08-18 | 1974-04-09 | ||
| JPS50159251A (enExample) * | 1974-06-11 | 1975-12-23 | ||
| JPS531585A (en) * | 1976-06-28 | 1978-01-09 | Canon Horosonitsukusu Kk | Ultrasonic flaw detector |
| JPS531584A (en) * | 1976-06-28 | 1978-01-09 | Canon Horosonitsukusu Kk | Ultrasonic flaw detector |
| JPS5453874A (en) * | 1977-10-06 | 1979-04-27 | Toshiba Corp | Production of semiconductor device |
| JPS5492387A (en) * | 1977-12-29 | 1979-07-21 | Sumitomo Metal Ind | Noncontact supersonic inspecting method |
| JPS54113243A (en) * | 1978-02-24 | 1979-09-04 | Toshiba Corp | Production of semiconductor device |
| JPS54161267A (en) * | 1978-06-12 | 1979-12-20 | Toshiba Corp | Ion injector |
| JPS54162452A (en) * | 1978-06-13 | 1979-12-24 | Mitsubishi Electric Corp | Manufacture of semiconductor and its unit |
| JPS5693357A (en) * | 1979-12-26 | 1981-07-28 | Seiko Epson Corp | Manufacture of polycrystalline silicon resistor |
| JPS56137642A (en) * | 1980-03-31 | 1981-10-27 | Takashi Katoda | Control method for semiconductor annealing process |
-
1982
- 1982-03-25 JP JP57046292A patent/JPS58164135A/ja active Granted
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4938295A (enExample) * | 1972-08-18 | 1974-04-09 | ||
| JPS50159251A (enExample) * | 1974-06-11 | 1975-12-23 | ||
| JPS531585A (en) * | 1976-06-28 | 1978-01-09 | Canon Horosonitsukusu Kk | Ultrasonic flaw detector |
| JPS531584A (en) * | 1976-06-28 | 1978-01-09 | Canon Horosonitsukusu Kk | Ultrasonic flaw detector |
| JPS5453874A (en) * | 1977-10-06 | 1979-04-27 | Toshiba Corp | Production of semiconductor device |
| JPS5492387A (en) * | 1977-12-29 | 1979-07-21 | Sumitomo Metal Ind | Noncontact supersonic inspecting method |
| JPS54113243A (en) * | 1978-02-24 | 1979-09-04 | Toshiba Corp | Production of semiconductor device |
| JPS54161267A (en) * | 1978-06-12 | 1979-12-20 | Toshiba Corp | Ion injector |
| JPS54162452A (en) * | 1978-06-13 | 1979-12-24 | Mitsubishi Electric Corp | Manufacture of semiconductor and its unit |
| JPS5693357A (en) * | 1979-12-26 | 1981-07-28 | Seiko Epson Corp | Manufacture of polycrystalline silicon resistor |
| JPS56137642A (en) * | 1980-03-31 | 1981-10-27 | Takashi Katoda | Control method for semiconductor annealing process |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60211757A (ja) * | 1984-04-05 | 1985-10-24 | Hitachi Ltd | イオンビーム加工装置および表面加工方法 |
| JPS6435913A (en) * | 1987-07-31 | 1989-02-07 | Hitachi Ltd | Method and device for correcting defect of device |
| JPH01181529A (ja) * | 1988-01-12 | 1989-07-19 | Hitachi Ltd | 集束イオンビーム加工方法とその装置 |
| US6278578B1 (en) | 1990-04-16 | 2001-08-21 | Hitachi, Ltd. | Narrow track thin film head having a focused ion beam etched air bearing surface |
| US6307707B1 (en) | 1990-04-16 | 2001-10-23 | Hitachi, Ltd. | Narrow track thin film head including magnetic poles machined by focused ion beam etching |
| US6538844B2 (en) | 1990-04-16 | 2003-03-25 | Hitachi, Ltd. | Method of fabricating a magnetic head by focused ion beam etching |
| US6665141B2 (en) | 1990-04-16 | 2003-12-16 | Hitachi, Ltd. | Magnetic head having track width defined by trench portions filled with magnetic shield material |
| US6839200B2 (en) | 1990-04-16 | 2005-01-04 | Hitachi, Ltd. | Combination perpendicular magnetic head having shield material formed at both ends of an upper pole of a write element |
| JP2006194907A (ja) * | 2006-03-31 | 2006-07-27 | Hitachi Ltd | 電子線を用いた試料観察装置および方法 |
| JP2009037910A (ja) * | 2007-08-02 | 2009-02-19 | Sii Nanotechnology Inc | 複合荷電粒子ビーム装置及び加工観察方法 |
| DE102008045336A1 (de) * | 2008-09-01 | 2010-03-11 | Carl Zeiss Nts Gmbh | System zur Bearbeitung einer Probe mit einem Laserstrahl und einem Elektronenstrahl oder einem Ionenstrahl |
| US8115180B2 (en) | 2008-09-01 | 2012-02-14 | Carl Zeiss Nts Gmbh | Processing system |
| US8350227B2 (en) | 2008-09-01 | 2013-01-08 | Carl Zeiss Microscopy Gmbh | Processing system |
| US8558174B2 (en) | 2008-09-01 | 2013-10-15 | Carl Zeiss Microscopy Gmbh | Processing system |
| DE102008045336B4 (de) | 2008-09-01 | 2022-05-25 | Carl Zeiss Microscopy Gmbh | System zur Bearbeitung einer Probe mit einem Laserstrahl und einem Elektronenstrahl oder einem Ionenstrahl |
| JP2009038043A (ja) * | 2008-11-04 | 2009-02-19 | Hitachi High-Technologies Corp | 半導体の加工観察装置、および半導体の加工観察装置の操作方法 |
| WO2024242075A1 (ja) * | 2023-05-22 | 2024-11-28 | 浜松ホトニクス株式会社 | 顕微鏡装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6352429B2 (enExample) | 1988-10-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |