JPS58164135A - 収束イオンビ−ムを用いた半導体加工装置 - Google Patents

収束イオンビ−ムを用いた半導体加工装置

Info

Publication number
JPS58164135A
JPS58164135A JP57046292A JP4629282A JPS58164135A JP S58164135 A JPS58164135 A JP S58164135A JP 57046292 A JP57046292 A JP 57046292A JP 4629282 A JP4629282 A JP 4629282A JP S58164135 A JPS58164135 A JP S58164135A
Authority
JP
Japan
Prior art keywords
sample
processing
generating means
repair
ion beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57046292A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6352429B2 (cg-RX-API-DMAC10.html
Inventor
Kiyoshi Asakawa
浅川　潔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP57046292A priority Critical patent/JPS58164135A/ja
Publication of JPS58164135A publication Critical patent/JPS58164135A/ja
Publication of JPS6352429B2 publication Critical patent/JPS6352429B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP57046292A 1982-03-25 1982-03-25 収束イオンビ−ムを用いた半導体加工装置 Granted JPS58164135A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57046292A JPS58164135A (ja) 1982-03-25 1982-03-25 収束イオンビ−ムを用いた半導体加工装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57046292A JPS58164135A (ja) 1982-03-25 1982-03-25 収束イオンビ−ムを用いた半導体加工装置

Publications (2)

Publication Number Publication Date
JPS58164135A true JPS58164135A (ja) 1983-09-29
JPS6352429B2 JPS6352429B2 (cg-RX-API-DMAC10.html) 1988-10-19

Family

ID=12743129

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57046292A Granted JPS58164135A (ja) 1982-03-25 1982-03-25 収束イオンビ−ムを用いた半導体加工装置

Country Status (1)

Country Link
JP (1) JPS58164135A (cg-RX-API-DMAC10.html)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60211757A (ja) * 1984-04-05 1985-10-24 Hitachi Ltd イオンビーム加工装置および表面加工方法
JPS6435913A (en) * 1987-07-31 1989-02-07 Hitachi Ltd Method and device for correcting defect of device
JPH01181529A (ja) * 1988-01-12 1989-07-19 Hitachi Ltd 集束イオンビーム加工方法とその装置
US6278578B1 (en) 1990-04-16 2001-08-21 Hitachi, Ltd. Narrow track thin film head having a focused ion beam etched air bearing surface
JP2006194907A (ja) * 2006-03-31 2006-07-27 Hitachi Ltd 電子線を用いた試料観察装置および方法
JP2009038043A (ja) * 2008-11-04 2009-02-19 Hitachi High-Technologies Corp 半導体の加工観察装置、および半導体の加工観察装置の操作方法
JP2009037910A (ja) * 2007-08-02 2009-02-19 Sii Nanotechnology Inc 複合荷電粒子ビーム装置及び加工観察方法
DE102008045336A1 (de) * 2008-09-01 2010-03-11 Carl Zeiss Nts Gmbh System zur Bearbeitung einer Probe mit einem Laserstrahl und einem Elektronenstrahl oder einem Ionenstrahl
WO2024242075A1 (ja) * 2023-05-22 2024-11-28 浜松ホトニクス株式会社 顕微鏡装置

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4938295A (cg-RX-API-DMAC10.html) * 1972-08-18 1974-04-09
JPS50159251A (cg-RX-API-DMAC10.html) * 1974-06-11 1975-12-23
JPS531585A (en) * 1976-06-28 1978-01-09 Canon Horosonitsukusu Kk Ultrasonic flaw detector
JPS531584A (en) * 1976-06-28 1978-01-09 Canon Horosonitsukusu Kk Ultrasonic flaw detector
JPS5453874A (en) * 1977-10-06 1979-04-27 Toshiba Corp Production of semiconductor device
JPS5492387A (en) * 1977-12-29 1979-07-21 Sumitomo Metal Ind Noncontact supersonic inspecting method
JPS54113243A (en) * 1978-02-24 1979-09-04 Toshiba Corp Production of semiconductor device
JPS54161267A (en) * 1978-06-12 1979-12-20 Toshiba Corp Ion injector
JPS54162452A (en) * 1978-06-13 1979-12-24 Mitsubishi Electric Corp Manufacture of semiconductor and its unit
JPS5693357A (en) * 1979-12-26 1981-07-28 Seiko Epson Corp Manufacture of polycrystalline silicon resistor
JPS56137642A (en) * 1980-03-31 1981-10-27 Takashi Katoda Control method for semiconductor annealing process

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4938295A (cg-RX-API-DMAC10.html) * 1972-08-18 1974-04-09
JPS50159251A (cg-RX-API-DMAC10.html) * 1974-06-11 1975-12-23
JPS531585A (en) * 1976-06-28 1978-01-09 Canon Horosonitsukusu Kk Ultrasonic flaw detector
JPS531584A (en) * 1976-06-28 1978-01-09 Canon Horosonitsukusu Kk Ultrasonic flaw detector
JPS5453874A (en) * 1977-10-06 1979-04-27 Toshiba Corp Production of semiconductor device
JPS5492387A (en) * 1977-12-29 1979-07-21 Sumitomo Metal Ind Noncontact supersonic inspecting method
JPS54113243A (en) * 1978-02-24 1979-09-04 Toshiba Corp Production of semiconductor device
JPS54161267A (en) * 1978-06-12 1979-12-20 Toshiba Corp Ion injector
JPS54162452A (en) * 1978-06-13 1979-12-24 Mitsubishi Electric Corp Manufacture of semiconductor and its unit
JPS5693357A (en) * 1979-12-26 1981-07-28 Seiko Epson Corp Manufacture of polycrystalline silicon resistor
JPS56137642A (en) * 1980-03-31 1981-10-27 Takashi Katoda Control method for semiconductor annealing process

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60211757A (ja) * 1984-04-05 1985-10-24 Hitachi Ltd イオンビーム加工装置および表面加工方法
JPS6435913A (en) * 1987-07-31 1989-02-07 Hitachi Ltd Method and device for correcting defect of device
JPH01181529A (ja) * 1988-01-12 1989-07-19 Hitachi Ltd 集束イオンビーム加工方法とその装置
US6278578B1 (en) 1990-04-16 2001-08-21 Hitachi, Ltd. Narrow track thin film head having a focused ion beam etched air bearing surface
US6307707B1 (en) 1990-04-16 2001-10-23 Hitachi, Ltd. Narrow track thin film head including magnetic poles machined by focused ion beam etching
US6538844B2 (en) 1990-04-16 2003-03-25 Hitachi, Ltd. Method of fabricating a magnetic head by focused ion beam etching
US6665141B2 (en) 1990-04-16 2003-12-16 Hitachi, Ltd. Magnetic head having track width defined by trench portions filled with magnetic shield material
US6839200B2 (en) 1990-04-16 2005-01-04 Hitachi, Ltd. Combination perpendicular magnetic head having shield material formed at both ends of an upper pole of a write element
JP2006194907A (ja) * 2006-03-31 2006-07-27 Hitachi Ltd 電子線を用いた試料観察装置および方法
JP2009037910A (ja) * 2007-08-02 2009-02-19 Sii Nanotechnology Inc 複合荷電粒子ビーム装置及び加工観察方法
DE102008045336A1 (de) * 2008-09-01 2010-03-11 Carl Zeiss Nts Gmbh System zur Bearbeitung einer Probe mit einem Laserstrahl und einem Elektronenstrahl oder einem Ionenstrahl
US8115180B2 (en) 2008-09-01 2012-02-14 Carl Zeiss Nts Gmbh Processing system
US8350227B2 (en) 2008-09-01 2013-01-08 Carl Zeiss Microscopy Gmbh Processing system
US8558174B2 (en) 2008-09-01 2013-10-15 Carl Zeiss Microscopy Gmbh Processing system
DE102008045336B4 (de) 2008-09-01 2022-05-25 Carl Zeiss Microscopy Gmbh System zur Bearbeitung einer Probe mit einem Laserstrahl und einem Elektronenstrahl oder einem Ionenstrahl
JP2009038043A (ja) * 2008-11-04 2009-02-19 Hitachi High-Technologies Corp 半導体の加工観察装置、および半導体の加工観察装置の操作方法
WO2024242075A1 (ja) * 2023-05-22 2024-11-28 浜松ホトニクス株式会社 顕微鏡装置

Also Published As

Publication number Publication date
JPS6352429B2 (cg-RX-API-DMAC10.html) 1988-10-19

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term