JPS58162078A - 半導体受光素子 - Google Patents

半導体受光素子

Info

Publication number
JPS58162078A
JPS58162078A JP57046028A JP4602882A JPS58162078A JP S58162078 A JPS58162078 A JP S58162078A JP 57046028 A JP57046028 A JP 57046028A JP 4602882 A JP4602882 A JP 4602882A JP S58162078 A JPS58162078 A JP S58162078A
Authority
JP
Japan
Prior art keywords
crystal
junction
type
layer
photodetector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57046028A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6259905B2 (fr
Inventor
Haruo Nagai
治男 永井
Susumu Hata
進 秦
Susumu Kondo
進 近藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP57046028A priority Critical patent/JPS58162078A/ja
Publication of JPS58162078A publication Critical patent/JPS58162078A/ja
Publication of JPS6259905B2 publication Critical patent/JPS6259905B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • H01L31/1035—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIIBV compounds

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
JP57046028A 1982-03-23 1982-03-23 半導体受光素子 Granted JPS58162078A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57046028A JPS58162078A (ja) 1982-03-23 1982-03-23 半導体受光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57046028A JPS58162078A (ja) 1982-03-23 1982-03-23 半導体受光素子

Publications (2)

Publication Number Publication Date
JPS58162078A true JPS58162078A (ja) 1983-09-26
JPS6259905B2 JPS6259905B2 (fr) 1987-12-14

Family

ID=12735584

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57046028A Granted JPS58162078A (ja) 1982-03-23 1982-03-23 半導体受光素子

Country Status (1)

Country Link
JP (1) JPS58162078A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002314118A (ja) * 2001-04-16 2002-10-25 Sumitomo Electric Ind Ltd 受光素子
JP2006295216A (ja) * 1995-02-02 2006-10-26 Sumitomo Electric Ind Ltd ｐｉｎ型受光素子およびｐｉｎ型受光素子の製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0280908U (fr) * 1988-12-09 1990-06-21

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006295216A (ja) * 1995-02-02 2006-10-26 Sumitomo Electric Ind Ltd ｐｉｎ型受光素子およびｐｉｎ型受光素子の製造方法
JP2002314118A (ja) * 2001-04-16 2002-10-25 Sumitomo Electric Ind Ltd 受光素子

Also Published As

Publication number Publication date
JPS6259905B2 (fr) 1987-12-14

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