JPS58158987A - 分布帰還形半導体レ−ザ - Google Patents

分布帰還形半導体レ−ザ

Info

Publication number
JPS58158987A
JPS58158987A JP57041315A JP4131582A JPS58158987A JP S58158987 A JPS58158987 A JP S58158987A JP 57041315 A JP57041315 A JP 57041315A JP 4131582 A JP4131582 A JP 4131582A JP S58158987 A JPS58158987 A JP S58158987A
Authority
JP
Japan
Prior art keywords
layer
type
substrate
light
refractive index
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57041315A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6320037B2 (cs
Inventor
Takashi Matsuoka
隆志 松岡
Haruo Nagai
治男 永井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP57041315A priority Critical patent/JPS58158987A/ja
Publication of JPS58158987A publication Critical patent/JPS58158987A/ja
Publication of JPS6320037B2 publication Critical patent/JPS6320037B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP57041315A 1982-03-16 1982-03-16 分布帰還形半導体レ−ザ Granted JPS58158987A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57041315A JPS58158987A (ja) 1982-03-16 1982-03-16 分布帰還形半導体レ−ザ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57041315A JPS58158987A (ja) 1982-03-16 1982-03-16 分布帰還形半導体レ−ザ

Publications (2)

Publication Number Publication Date
JPS58158987A true JPS58158987A (ja) 1983-09-21
JPS6320037B2 JPS6320037B2 (cs) 1988-04-26

Family

ID=12605072

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57041315A Granted JPS58158987A (ja) 1982-03-16 1982-03-16 分布帰還形半導体レ−ザ

Country Status (1)

Country Link
JP (1) JPS58158987A (cs)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4941148A (en) * 1986-11-12 1990-07-10 Sharp Kabushiki Kaisha Semiconductor laser element with a single longitudinal oscillation mode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4941148A (en) * 1986-11-12 1990-07-10 Sharp Kabushiki Kaisha Semiconductor laser element with a single longitudinal oscillation mode

Also Published As

Publication number Publication date
JPS6320037B2 (cs) 1988-04-26

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