JPS58158967A - Silicon thin film transistor - Google Patents

Silicon thin film transistor

Info

Publication number
JPS58158967A
JPS58158967A JP4011182A JP4011182A JPS58158967A JP S58158967 A JPS58158967 A JP S58158967A JP 4011182 A JP4011182 A JP 4011182A JP 4011182 A JP4011182 A JP 4011182A JP S58158967 A JPS58158967 A JP S58158967A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
film
zns
si
ta2o3
further
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4011182A
Inventor
Shunji Seki
Bunjiro Tsujiyama
Takashi Umigami
Original Assignee
Nippon Telegr & Teleph Corp <Ntt>
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Abstract

PURPOSE:To obtain an FET of high performance by interposing a ZnS conductive a ZnS conductive film between a thin Si film and an amorphous insulative substrate and employing as a gate insulating film a thin Ta2O3 film. CONSTITUTION:Since a ZnS 6 has a large forbidden band width, it can be regarded as an insulative layer, thereby enable preventing the back channel effect and reducing the threshold voltage and the leakage between the source 7 and the drain 9. Further, since ZnS is arranged in (111) direction on an amorphous insulative plate 5 and Si crystal and lattice constant coincide, a single crystal Si thin film can be grown on the plate by an epitaxial method or CVD method, thereby obtaining high carrier mobility, the boundary characteristics between the Si and ZnS can be improved, and the withstand voltage of the transistor can be increased. Further, mobile cations are extremely small in a Ta2O3 film 8, an inverted region such as between Si and SiO2 is not formed, thereby reducing the threshold voltage. Further, the dielectric constant of Ta2O3 is approx. 7 times that of the SiO2, thereby enable increasing the mutual conductance. The thickness of the Ta2O3 film is selected for the utility of the FET.
JP4011182A 1982-03-16 1982-03-16 Silicon thin film transistor Granted JPS58158967A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4011182A JPS58158967A (en) 1982-03-16 1982-03-16 Silicon thin film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4011182A JPS58158967A (en) 1982-03-16 1982-03-16 Silicon thin film transistor

Publications (1)

Publication Number Publication Date
JPS58158967A true true JPS58158967A (en) 1983-09-21

Family

ID=12571737

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4011182A Granted JPS58158967A (en) 1982-03-16 1982-03-16 Silicon thin film transistor

Country Status (1)

Country Link
JP (1) JPS58158967A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5289030A (en) * 1991-03-06 1994-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with oxide layer
US5568288A (en) * 1991-03-26 1996-10-22 Semiconductor Energy Laboratory Co., Ltd. Method for forming thin film transistors with anodic oxide on sides of gate line
US5572047A (en) * 1990-12-10 1996-11-05 Semiconductor Energy Laboratory Co., Ltd. Electro-Optic device having pairs of complementary transistors
US5913112A (en) * 1991-03-06 1999-06-15 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing an insulated gate field effect semiconductor device having an offset region and/or lightly doped region
US5917225A (en) * 1992-03-05 1999-06-29 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor having specific dielectric structures
US5956105A (en) * 1991-06-14 1999-09-21 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
USRE36314E (en) * 1991-03-06 1999-09-28 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect semiconductor devices having a LDD region and an anodic oxide film of a gate electrode
US6028333A (en) * 1991-02-16 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
US6624450B1 (en) 1992-03-27 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6778231B1 (en) 1991-06-14 2004-08-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical display device
US6975296B1 (en) 1991-06-14 2005-12-13 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5572047A (en) * 1990-12-10 1996-11-05 Semiconductor Energy Laboratory Co., Ltd. Electro-Optic device having pairs of complementary transistors
US6028333A (en) * 1991-02-16 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
USRE36314E (en) * 1991-03-06 1999-09-28 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect semiconductor devices having a LDD region and an anodic oxide film of a gate electrode
US5474945A (en) * 1991-03-06 1995-12-12 Semiconductor Energy Laboratory Co., Ltd. Method for forming semiconductor device comprising metal oxide
US5913112A (en) * 1991-03-06 1999-06-15 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing an insulated gate field effect semiconductor device having an offset region and/or lightly doped region
US5289030A (en) * 1991-03-06 1994-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with oxide layer
US5568288A (en) * 1991-03-26 1996-10-22 Semiconductor Energy Laboratory Co., Ltd. Method for forming thin film transistors with anodic oxide on sides of gate line
US5933205A (en) * 1991-03-26 1999-08-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for driving the same
US5963278A (en) * 1991-03-26 1999-10-05 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for driving the same
US5956105A (en) * 1991-06-14 1999-09-21 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US7928946B2 (en) 1991-06-14 2011-04-19 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US6778231B1 (en) 1991-06-14 2004-08-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical display device
US6975296B1 (en) 1991-06-14 2005-12-13 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US7456427B2 (en) 1991-08-26 2008-11-25 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect semiconductor devices and method of manufacturing the same
US6331723B1 (en) 1991-08-26 2001-12-18 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device having at least two transistors having LDD region in one pixel
US6803600B2 (en) 1991-08-26 2004-10-12 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect semiconductor devices and method of manufacturing the same
US7821011B2 (en) 1991-08-26 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect semiconductor devices and method of manufacturing the same
US5917225A (en) * 1992-03-05 1999-06-29 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor having specific dielectric structures
US6624450B1 (en) 1992-03-27 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same

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