JPS58156599A - ３−５族化合物半導体単結晶の製造方法 - Google Patents

３−５族化合物半導体単結晶の製造方法

Info

Publication number
JPS58156599A
JPS58156599A JP3978582A JP3978582A JPS58156599A JP S58156599 A JPS58156599 A JP S58156599A JP 3978582 A JP3978582 A JP 3978582A JP 3978582 A JP3978582 A JP 3978582A JP S58156599 A JPS58156599 A JP S58156599A
Authority
JP
Japan
Prior art keywords
boat
temperature
thermocouple
single crystal
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3978582A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6229394B2 (enrdf_load_stackoverflow
Inventor
Seiji Mizuniwa
清治 水庭
Junkichi Nakagawa
中川　順吉
Toshiya Toyoshima
豊島　敏也
Tomoki Inada
稲田　知己
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP3978582A priority Critical patent/JPS58156599A/ja
Publication of JPS58156599A publication Critical patent/JPS58156599A/ja
Publication of JPS6229394B2 publication Critical patent/JPS6229394B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP3978582A 1982-03-12 1982-03-12 ３−５族化合物半導体単結晶の製造方法 Granted JPS58156599A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3978582A JPS58156599A (ja) 1982-03-12 1982-03-12 ３−５族化合物半導体単結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3978582A JPS58156599A (ja) 1982-03-12 1982-03-12 ３−５族化合物半導体単結晶の製造方法

Publications (2)

Publication Number Publication Date
JPS58156599A true JPS58156599A (ja) 1983-09-17
JPS6229394B2 JPS6229394B2 (enrdf_load_stackoverflow) 1987-06-25

Family

ID=12562585

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3978582A Granted JPS58156599A (ja) 1982-03-12 1982-03-12 ３−５族化合物半導体単結晶の製造方法

Country Status (1)

Country Link
JP (1) JPS58156599A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02145499A (ja) * 1988-12-28 1990-06-04 Tsuaitowan Faaren Gonie Jishu Ienjiou Yuen 砒化ガリウム単結晶の成長方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01219990A (ja) * 1988-02-19 1989-09-01 Internatl Business Mach Corp <Ibm> 紙幣処理装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5215073A (en) * 1975-07-26 1977-02-04 Setozaki Tekkosho:Kk Cargo ship having movable deck
JPS56100200A (en) * 1980-01-17 1981-08-11 Sumitomo Electric Ind Ltd Method and apparatus for manufacturing gallium arsenide single crystal

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5215073A (en) * 1975-07-26 1977-02-04 Setozaki Tekkosho:Kk Cargo ship having movable deck
JPS56100200A (en) * 1980-01-17 1981-08-11 Sumitomo Electric Ind Ltd Method and apparatus for manufacturing gallium arsenide single crystal

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02145499A (ja) * 1988-12-28 1990-06-04 Tsuaitowan Faaren Gonie Jishu Ienjiou Yuen 砒化ガリウム単結晶の成長方法

Also Published As

Publication number Publication date
JPS6229394B2 (enrdf_load_stackoverflow) 1987-06-25

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