JPS58148473A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS58148473A
JPS58148473A JP57032856A JP3285682A JPS58148473A JP S58148473 A JPS58148473 A JP S58148473A JP 57032856 A JP57032856 A JP 57032856A JP 3285682 A JP3285682 A JP 3285682A JP S58148473 A JPS58148473 A JP S58148473A
Authority
JP
Japan
Prior art keywords
electrode
substrate
semiconductor
semiconductor device
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57032856A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6222275B2 (enrdf_load_stackoverflow
Inventor
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP57032856A priority Critical patent/JPS58148473A/ja
Publication of JPS58148473A publication Critical patent/JPS58148473A/ja
Publication of JPS6222275B2 publication Critical patent/JPS6222275B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes

Landscapes

  • Photovoltaic Devices (AREA)
JP57032856A 1982-03-01 1982-03-01 半導体装置 Granted JPS58148473A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57032856A JPS58148473A (ja) 1982-03-01 1982-03-01 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57032856A JPS58148473A (ja) 1982-03-01 1982-03-01 半導体装置

Publications (2)

Publication Number Publication Date
JPS58148473A true JPS58148473A (ja) 1983-09-03
JPS6222275B2 JPS6222275B2 (enrdf_load_stackoverflow) 1987-05-16

Family

ID=12370477

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57032856A Granted JPS58148473A (ja) 1982-03-01 1982-03-01 半導体装置

Country Status (1)

Country Link
JP (1) JPS58148473A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016035432A1 (ja) * 2014-09-05 2016-03-10 株式会社 東芝 光電変換素子、光電変換素子の配線基板、光電変換素子の製造方法、および光電変換構造体

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016035432A1 (ja) * 2014-09-05 2016-03-10 株式会社 東芝 光電変換素子、光電変換素子の配線基板、光電変換素子の製造方法、および光電変換構造体
JP2016058455A (ja) * 2014-09-05 2016-04-21 株式会社東芝 光電変換素子、光電変換素子の配線基板、光電変換素子の製造方法、および光電変換構造体

Also Published As

Publication number Publication date
JPS6222275B2 (enrdf_load_stackoverflow) 1987-05-16

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