JPS58148424A - 気相成長法 - Google Patents

気相成長法

Info

Publication number
JPS58148424A
JPS58148424A JP57031353A JP3135382A JPS58148424A JP S58148424 A JPS58148424 A JP S58148424A JP 57031353 A JP57031353 A JP 57031353A JP 3135382 A JP3135382 A JP 3135382A JP S58148424 A JPS58148424 A JP S58148424A
Authority
JP
Japan
Prior art keywords
rotation
sample
phase growth
vapor phase
perform
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57031353A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0544178B2 (enExample
Inventor
Masao Ikeda
昌夫 池田
Yoshifumi Mori
森　芳文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP57031353A priority Critical patent/JPS58148424A/ja
Publication of JPS58148424A publication Critical patent/JPS58148424A/ja
Publication of JPH0544178B2 publication Critical patent/JPH0544178B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
JP57031353A 1982-02-26 1982-02-26 気相成長法 Granted JPS58148424A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57031353A JPS58148424A (ja) 1982-02-26 1982-02-26 気相成長法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57031353A JPS58148424A (ja) 1982-02-26 1982-02-26 気相成長法

Publications (2)

Publication Number Publication Date
JPS58148424A true JPS58148424A (ja) 1983-09-03
JPH0544178B2 JPH0544178B2 (enExample) 1993-07-05

Family

ID=12328861

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57031353A Granted JPS58148424A (ja) 1982-02-26 1982-02-26 気相成長法

Country Status (1)

Country Link
JP (1) JPS58148424A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60196933A (ja) * 1984-03-21 1985-10-05 Nec Corp 半導体の気相成長装置
JPS6155916A (ja) * 1984-08-27 1986-03-20 Matsushita Electric Ind Co Ltd 気相成長方法
JPS62235724A (ja) * 1986-04-04 1987-10-15 Mitsubishi Electric Corp Ｍｏｃｖｄ装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4874483A (enExample) * 1972-01-10 1973-10-06

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4874483A (enExample) * 1972-01-10 1973-10-06

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60196933A (ja) * 1984-03-21 1985-10-05 Nec Corp 半導体の気相成長装置
JPS6155916A (ja) * 1984-08-27 1986-03-20 Matsushita Electric Ind Co Ltd 気相成長方法
JPS62235724A (ja) * 1986-04-04 1987-10-15 Mitsubishi Electric Corp Ｍｏｃｖｄ装置

Also Published As

Publication number Publication date
JPH0544178B2 (enExample) 1993-07-05

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