JPS58147559A - Sputtering device - Google Patents

Sputtering device

Info

Publication number
JPS58147559A
JPS58147559A JP2876882A JP2876882A JPS58147559A JP S58147559 A JPS58147559 A JP S58147559A JP 2876882 A JP2876882 A JP 2876882A JP 2876882 A JP2876882 A JP 2876882A JP S58147559 A JPS58147559 A JP S58147559A
Authority
JP
Japan
Prior art keywords
nitride
target
thin film
deoxidizing effect
materials
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2876882A
Other languages
Japanese (ja)
Inventor
Soichi Matsuzaki
松崎　壮一
Minoru Osada
実 長田
Seiji Yasui
政治 安井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lincstech Circuit Co Ltd
Original Assignee
Hitachi Condenser Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Condenser Co Ltd filed Critical Hitachi Condenser Co Ltd
Priority to JP2876882A priority Critical patent/JPS58147559A/en
Publication of JPS58147559A publication Critical patent/JPS58147559A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C23C14/0652—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C23C14/0647—Boron nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To form a thin film of nitride having high lubricity easily on a substrate, by providing a target consisting of nitride contg. materials having a deoxidizing effect in a sputtering device. CONSTITUTION:Nitride such as boron nitride or silicon nitride contg. materials havig a deoxidizing effect such as of groups III, IV, V, and VI of periodic table like Al and Cr is used as a target 4. A high-frequency electric power source 3 is connected between anode 5 and cathode 2, and the Ar introduced into a vacuum vessel 1 is ionized by the electric field applied by said power source, whereby the target 4 is sputtered. Boron nitride and sputter atoms of Al, etc. are driven off from the target 4 by the sputtering and are stuck on a substrate 6. Since the materials having the deoxidizing effect such as Al change the oxide that retards the formation of the thin film of nitride to harmless oxide, the thin film of nitride is easily formed, the purity of the nitride is improved and lubricity is improved.

Description

【発明の詳細な説明】 本発明は窒化物薄膜を形成しうるスパッタリング装置に
関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a sputtering apparatus capable of forming a nitride thin film.

磁気テープ等の磁気記録媒体には走行の際にローラ等に
よって表面が損傷しないように潤滑層が設けられている
。また２時計の巻真には無注油化のため潤滑層の被覆が
形成されている。A magnetic recording medium such as a magnetic tape is provided with a lubricating layer to prevent the surface from being damaged by rollers or the like during running. Furthermore, the winding stem of the two watches is coated with a lubricating layer to eliminate lubrication.

これ等の物の潤滑層には１例えば窒化硼素が用いられ、
窒化硼素の粉末を基体にコーティングしたり、窒化硼素
をスパツクしたり、あるいは１ｌｌＪｌ素を窒素ガス雰
囲気中でイオンブレーティング等したりすることにより
形成されている。For example, boron nitride is used for the lubricating layer of these products.
It is formed by coating a substrate with boron nitride powder, sprinkling boron nitride, or subjecting 111J1 hydrogen to ion blasting in a nitrogen gas atmosphere.

しかしながら、従来の窒化−素からなる潤滑層は潤滑性
が低い欠点がありその改良が望まれていた。However, the conventional lubricating layer made of elemental nitride has a drawback of low lubricity, and an improvement has been desired.

本発明は９以上の点に鑑み、潤滑性の高い窒化物薄膜を
形成しうるスパッタリング装置の提供を目的とするもの
である。In view of the above points, the present invention aims to provide a sputtering apparatus capable of forming a nitride thin film with high lubricity.

本発明は、上記の目的を達成するために、脱酸効果を有
する物質を含む窒化物からなるターゲ。In order to achieve the above object, the present invention provides a target made of nitride containing a substance having a deoxidizing effect.

トを設けることを特徴とするスパッタリング装置を提供
するものである。The present invention provides a sputtering apparatus characterized in that a sputtering apparatus is provided with a sputtering apparatus.

以下１本発明の実施例を図面に基づいて説明する。An embodiment of the present invention will be described below based on the drawings.

１は真空槽であり、アルゴンガスが充填され。1 is a vacuum chamber filled with argon gas.

５×１０ＴＯマＹ程度の真空度に保持されている。２は
陰極であり、高周波電＃６が接続され、タープ７ト４が
設けられている。ターゲット４としては。The degree of vacuum is maintained at approximately 5×10 TOM. Reference numeral 2 denotes a cathode, to which a high frequency electric wire #6 is connected and a tarp 7 4 is provided. As target 4.

ＡｌやＣｒ等の周期表の第３族、第４族、第５族及び第
６族の脱酸効果を有する物質を含む窒化硼素や窒化ケイ
素等の窒化物が用いられている。５は陽極であり、高周
波電源３に接続されている。６は合成樹脂フィルム等の
基体であり、陽極５の表面に載置されている。Nitrides such as boron nitride and silicon nitride containing substances having a deoxidizing effect of Groups 3, 4, 5 and 6 of the periodic table, such as Al and Cr, are used. 5 is an anode, which is connected to the high frequency power source 3. Reference numeral 6 denotes a base such as a synthetic resin film, which is placed on the surface of the anode 5.

すなわち、陽極５と陰極２との間に印加されている電界
によりアルゴンがイオン化してターゲット４をスパッタ
リングする。このスパッタリングによりターゲット４か
らは、窒化硼素やＡ６等のスバ、り原子が飛び出し、基
体６に付着する。窒化硼素や窒化ケイ素等の窒化物薄膜
を基体６に形成させる際１通常、酸化物が邪魔になるが
、水素や炭素等の物質が脱酸効果を有し、窒化物薄膜の
形成を防げる酸化物を無害な酸化物に変えるので。That is, argon is ionized by the electric field applied between the anode 5 and the cathode 2, and the target 4 is sputtered. By this sputtering, atoms of boron nitride, A6, etc. fly out from the target 4 and adhere to the base 6. When forming a thin nitride film such as boron nitride or silicon nitride on the substrate 6, 1. Usually, oxides get in the way, but substances such as hydrogen and carbon have a deoxidizing effect and can prevent the formation of a thin nitride film. Because it converts substances into harmless oxides.

窒化物薄膜の形成が容易になり、窒化物の純度が高くな
り潤滑性が向上する。Formation of a nitride thin film becomes easier, the purity of the nitride increases, and lubricity improves.

なお、雰囲気中にＨ２，００、及びＮ、ガスの内少なく
とも一種類を含有すれば、脱酸効果がより効果的に行な
われ、より潤滑性の高い窒化物薄膜が得られる。Note that if the atmosphere contains at least one of H2,00, N, and gas, the deoxidizing effect will be more effective, and a nitride thin film with higher lubricity will be obtained.

以上の通り９本発明によれば、ｓ滑性σ）高（・窒化物
薄膜を容易に形成し５るス・くツタリング装置が得られ
る。As described above, according to the present invention, it is possible to obtain a scuttling device that easily forms a nitride thin film with high lubricity σ.

【図面の簡単な説明】[Brief explanation of the drawing]

図は本発明の実施例の正面断面図を示す。 １・・・・・・真空槽、２・・・・・・陰極、ろ・・・
・・・高周波電源、４・・・・・・ターゲット、５・・
・・・・陽極。 ６・・・・・・基体。 特許出願人　日立コンデンサ株式会社The figure shows a front sectional view of an embodiment of the invention. 1... Vacuum chamber, 2... Cathode, Ro...
...High frequency power supply, 4...Target, 5...
····anode. 6...Base. Patent applicant Hitachi Capacitor Co., Ltd.

Claims (1)

【特許請求の範囲】 ｔｌｌ　　基体に窒化物薄膜を形成しうるスパッタリン
グ装置において、脱酸効果を有する物質を含む窒化物か
らなるターゲントを設けることを特徴とするスパッタリ
ング装置。 （２）　　スパノタリノグの雰囲気中にＨ２＋　ＣＯ＋
及びＮ２ガスの内少なくとも一種類を含む特許請求の範
囲第１項記載のスパッタリング装置。[Scope of Claim] tll A sputtering apparatus capable of forming a nitride thin film on a substrate, characterized in that a target made of nitride containing a substance having a deoxidizing effect is provided. (2) H2+ CO+ in the atmosphere of Supanotarinog
The sputtering apparatus according to claim 1, containing at least one of the following:
JP2876882A 1982-02-26 1982-02-26 Sputtering device Pending JPS58147559A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2876882A JPS58147559A (en) 1982-02-26 1982-02-26 Sputtering device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2876882A JPS58147559A (en) 1982-02-26 1982-02-26 Sputtering device

Publications (1)

Publication Number Publication Date
JPS58147559A true JPS58147559A (en) 1983-09-02

Family

ID=12257578

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2876882A Pending JPS58147559A (en) 1982-02-26 1982-02-26 Sputtering device

Country Status (1)

Country Link
JP (1) JPS58147559A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2599285A1 (en) * 1986-05-28 1987-12-04 Instr I WEAR RESISTANT COATING FOR CUTTING TOOLS AND METHOD FOR APPLYING SAID COATING.
EP0253881A1 (en) * 1986-01-21 1988-01-27 Battelle Development Corporation Cubic boron nitride preparation
WO2003070999A1 (en) * 2002-02-20 2003-08-28 Federal-Mogul Burscheid Gmbh Piston ring comprising a pvd coating

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5197545A (en) * 1975-02-25 1976-08-27 Paamaroimakuno seisakuho
JPS5531129A (en) * 1978-08-25 1980-03-05 Hitachi Metals Ltd Target material for physical vacuum deposition
JPS56152901A (en) * 1980-04-28 1981-11-26 Fukuda Kinzoku Hakufun Kogyo Kk Powder for sintered copper alloy containing aluminum

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5197545A (en) * 1975-02-25 1976-08-27 Paamaroimakuno seisakuho
JPS5531129A (en) * 1978-08-25 1980-03-05 Hitachi Metals Ltd Target material for physical vacuum deposition
JPS56152901A (en) * 1980-04-28 1981-11-26 Fukuda Kinzoku Hakufun Kogyo Kk Powder for sintered copper alloy containing aluminum

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0253881A1 (en) * 1986-01-21 1988-01-27 Battelle Development Corporation Cubic boron nitride preparation
FR2599285A1 (en) * 1986-05-28 1987-12-04 Instr I WEAR RESISTANT COATING FOR CUTTING TOOLS AND METHOD FOR APPLYING SAID COATING.
WO2003070999A1 (en) * 2002-02-20 2003-08-28 Federal-Mogul Burscheid Gmbh Piston ring comprising a pvd coating

Similar Documents

Publication Publication Date Title
JPS6135269B2 (en)
WO2002084702A3 (en) Sputtering deposition apparatus and method for depositing surface films
US5147734A (en) Magnetic recording media manufactured by a process in which a negative bias voltage is applied to the substrate during sputtering
GB1366146A (en) Magnetic storage devices
ES483670A1 (en) Amorphous magnetic films and a method of making such films.
JPS58147559A (en) Sputtering device
US4696862A (en) Magnetic recording medium
JPS57200945A (en) Magnetic recording medium
US4476000A (en) Method of making a magnetic film target for sputtering
JPH0352136B2 (en)
JPS62149866A (en) Target for sputtering
JPS5724022A (en) Production of magnetic recording substance
JPS58135111A (en) Formation of nitride thin film
JPS56165933A (en) Production of magnetic recording body
JPS5671831A (en) Manufacture for magnetic recording medium
JPS5684471A (en) Vacuum evaporation
JPS6453339A (en) Production of magnetic recording medium
JPS54140997A (en) Magnetic memory medium
JPS5968821A (en) Magnetic recording medium
JPS5684470A (en) Vacuum evaporation
JPH0237589A (en) Magnetic recording device
JPS60170915A (en) Formation of magnetic thin film
JPS58138794A (en) Article having lubricating layer
JPH03126867A (en) Sputtering method
JPS57203230A (en) Magnetic recording medium and its manufacture