JPS58145152A - ダ−リントン接続構造のトランジスタ - Google Patents

ダ−リントン接続構造のトランジスタ

Info

Publication number
JPS58145152A
JPS58145152A JP57029402A JP2940282A JPS58145152A JP S58145152 A JPS58145152 A JP S58145152A JP 57029402 A JP57029402 A JP 57029402A JP 2940282 A JP2940282 A JP 2940282A JP S58145152 A JPS58145152 A JP S58145152A
Authority
JP
Japan
Prior art keywords
stage
base
emitter
transistor
darlington
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57029402A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6250065B2 (enrdf_load_stackoverflow
Inventor
Yoshio Takagi
義夫 高木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP57029402A priority Critical patent/JPS58145152A/ja
Publication of JPS58145152A publication Critical patent/JPS58145152A/ja
Publication of JPS6250065B2 publication Critical patent/JPS6250065B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
JP57029402A 1982-02-23 1982-02-23 ダ−リントン接続構造のトランジスタ Granted JPS58145152A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57029402A JPS58145152A (ja) 1982-02-23 1982-02-23 ダ−リントン接続構造のトランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57029402A JPS58145152A (ja) 1982-02-23 1982-02-23 ダ−リントン接続構造のトランジスタ

Publications (2)

Publication Number Publication Date
JPS58145152A true JPS58145152A (ja) 1983-08-29
JPS6250065B2 JPS6250065B2 (enrdf_load_stackoverflow) 1987-10-22

Family

ID=12275139

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57029402A Granted JPS58145152A (ja) 1982-02-23 1982-02-23 ダ−リントン接続構造のトランジスタ

Country Status (1)

Country Link
JP (1) JPS58145152A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4994880A (en) * 1986-10-31 1991-02-19 Nippondenso Co., Ltd. Semiconductor device constituting bipolar transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4994880A (en) * 1986-10-31 1991-02-19 Nippondenso Co., Ltd. Semiconductor device constituting bipolar transistor

Also Published As

Publication number Publication date
JPS6250065B2 (enrdf_load_stackoverflow) 1987-10-22

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