JPS58143343A - 現像溶媒 - Google Patents

現像溶媒

Info

Publication number
JPS58143343A
JPS58143343A JP2462182A JP2462182A JPS58143343A JP S58143343 A JPS58143343 A JP S58143343A JP 2462182 A JP2462182 A JP 2462182A JP 2462182 A JP2462182 A JP 2462182A JP S58143343 A JPS58143343 A JP S58143343A
Authority
JP
Japan
Prior art keywords
solvent
swelling
solubility parameter
developing solvent
resist material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2462182A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0147775B2 (cg-RX-API-DMAC7.html
Inventor
Kazunari Miyoshi
三好　一功
Osamu Kogure
小暮　攻
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP2462182A priority Critical patent/JPS58143343A/ja
Publication of JPS58143343A publication Critical patent/JPS58143343A/ja
Publication of JPH0147775B2 publication Critical patent/JPH0147775B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP2462182A 1982-02-19 1982-02-19 現像溶媒 Granted JPS58143343A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2462182A JPS58143343A (ja) 1982-02-19 1982-02-19 現像溶媒

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2462182A JPS58143343A (ja) 1982-02-19 1982-02-19 現像溶媒

Publications (2)

Publication Number Publication Date
JPS58143343A true JPS58143343A (ja) 1983-08-25
JPH0147775B2 JPH0147775B2 (cg-RX-API-DMAC7.html) 1989-10-16

Family

ID=12143213

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2462182A Granted JPS58143343A (ja) 1982-02-19 1982-02-19 現像溶媒

Country Status (1)

Country Link
JP (1) JPS58143343A (cg-RX-API-DMAC7.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58187926A (ja) * 1982-04-28 1983-11-02 Toyo Soda Mfg Co Ltd 放射線ネガ型レジストの現像方法
JPS5984520A (ja) * 1982-11-08 1984-05-16 Hitachi Ltd 現像液
JP2011065105A (ja) * 2009-09-18 2011-03-31 Fujifilm Corp レジストパターン形成方法及びそれに用いられる現像液

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58187926A (ja) * 1982-04-28 1983-11-02 Toyo Soda Mfg Co Ltd 放射線ネガ型レジストの現像方法
JPS5984520A (ja) * 1982-11-08 1984-05-16 Hitachi Ltd 現像液
JP2011065105A (ja) * 2009-09-18 2011-03-31 Fujifilm Corp レジストパターン形成方法及びそれに用いられる現像液

Also Published As

Publication number Publication date
JPH0147775B2 (cg-RX-API-DMAC7.html) 1989-10-16

Similar Documents

Publication Publication Date Title
US3535137A (en) Method of fabricating etch resistant masks
US6063542A (en) Polymer for positive photoresist and chemical amplification positive photoresist composition comprising the same
US3987215A (en) Resist mask formation process
EP0519297B1 (de) Strahlungsempfindliches Gemisch, das als Bindemittel neue Polymere mit Einheiten aus Amiden von alpha,beta-ungesättigten Carbonsäuren enthält
JP3945741B2 (ja) ポジ型レジスト組成物
US4454222A (en) Process for forming resist patterns using mixed ketone developers
EP0492256B1 (de) Photolithographische Strukturerzeugung
EP0231028B1 (en) High contrast low metal ion photoresist developing method and composition
JPH0943848A (ja) レジスト材料及びレジストパターンの形成方法
JPS58143343A (ja) 現像溶媒
US4279984A (en) Positive resist for high energy radiation
US4187205A (en) Radiation-sensitive composition
KR20000047910A (ko) 단파장 이미지화에 특히 적합한 포토레지스트 조성물
US4024122A (en) Method of purifying 2,4-bis(6-diazo-5,6-dihydro-5-oxo-1-naphthalenesulfonyloxy benzophenone)
EP0188568B1 (en) Method of developing radiation sensitive negative resists
JPH0358104B2 (cg-RX-API-DMAC7.html)
JPH09134015A (ja) パタン形成材料，パタン形成方法および半導体素子製造方法
JPS6358338B2 (cg-RX-API-DMAC7.html)
KR100573819B1 (ko) 감광성 적층체 및 그것을 이용한 레지스트패턴 형성방법
JPH0332782B2 (cg-RX-API-DMAC7.html)
JPS5882241A (ja) ポジ型放射線感応材料
JPH0915862A (ja) レジスト組成物及びレジストパターンの形成方法
JPH08240907A (ja) レジスト組成物およびそれを用いたパタン形成方法
JPS5975244A (ja) 放射線感応性有機高分子材料
JPH02264259A (ja) ポジ型レジスト組成物およびパターン形成方法