JPS58142567A - 画像読取り素子の製造方法 - Google Patents

画像読取り素子の製造方法

Info

Publication number
JPS58142567A
JPS58142567A JP57024579A JP2457982A JPS58142567A JP S58142567 A JPS58142567 A JP S58142567A JP 57024579 A JP57024579 A JP 57024579A JP 2457982 A JP2457982 A JP 2457982A JP S58142567 A JPS58142567 A JP S58142567A
Authority
JP
Japan
Prior art keywords
film
electrode
electrodes
metal
image reading
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57024579A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6259894B2 (enrdf_load_stackoverflow
Inventor
Kazumi Komiya
小宮　一三
Minoru Kanzaki
歓崎　実
Mitsuhiko Tashiro
田代　光彦
Nobuki Ibaraki
伸樹 茨木
Yoshiko Yoshioka
吉岡　美子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Nippon Telegraph and Telephone Corp
Original Assignee
Toshiba Corp
Nippon Telegraph and Telephone Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Nippon Telegraph and Telephone Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP57024579A priority Critical patent/JPS58142567A/ja
Publication of JPS58142567A publication Critical patent/JPS58142567A/ja
Publication of JPS6259894B2 publication Critical patent/JPS6259894B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)
  • Wire Bonding (AREA)
  • Light Receiving Elements (AREA)
JP57024579A 1982-02-19 1982-02-19 画像読取り素子の製造方法 Granted JPS58142567A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57024579A JPS58142567A (ja) 1982-02-19 1982-02-19 画像読取り素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57024579A JPS58142567A (ja) 1982-02-19 1982-02-19 画像読取り素子の製造方法

Publications (2)

Publication Number Publication Date
JPS58142567A true JPS58142567A (ja) 1983-08-24
JPS6259894B2 JPS6259894B2 (enrdf_load_stackoverflow) 1987-12-14

Family

ID=12142070

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57024579A Granted JPS58142567A (ja) 1982-02-19 1982-02-19 画像読取り素子の製造方法

Country Status (1)

Country Link
JP (1) JPS58142567A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5940567A (ja) * 1982-08-30 1984-03-06 Nippon Telegr & Teleph Corp <Ntt> 光電変換素子
JPS6062155A (ja) * 1983-09-16 1985-04-10 Seiko Epson Corp イメ−ジセンサ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5940567A (ja) * 1982-08-30 1984-03-06 Nippon Telegr & Teleph Corp <Ntt> 光電変換素子
JPS6062155A (ja) * 1983-09-16 1985-04-10 Seiko Epson Corp イメ−ジセンサ

Also Published As

Publication number Publication date
JPS6259894B2 (enrdf_load_stackoverflow) 1987-12-14

Similar Documents

Publication Publication Date Title
US5248345A (en) Integrated photovoltaic device
US4307372A (en) Photosensor
JPS59147469A (ja) 非晶質シリコン太陽電池
JPS58142567A (ja) 画像読取り素子の製造方法
US4570329A (en) Apparatus and method for fabricating backside mosaic of photoconductive infrared detectors
JPS6132571A (ja) 光電変換装置
US5739547A (en) Reflection type display
JPS61216360A (ja) 密着型イメ−ジセンサ
JPS62113483A (ja) 薄膜太陽電池
JPS6235564A (ja) 光電変換素子の作製方法
JPS62137873A (ja) 光電変換装置の製造方法
JPS58155758A (ja) 光電変換素子およびその製造方法
JPS6142943A (ja) 複合半導体装置の製造方法
JPS6329993A (ja) 配線基板およびその製造方法
JPS60167464A (ja) 光電変換装置
JPH09321328A (ja) 光電変換装置の製造方法
JPS6182467A (ja) イメ−ジセンサの製造方法
JPS60182176A (ja) 非晶質シリコン太陽電池の製造方法
JPS5848969A (ja) 光電変換装置
JPS6364081A (ja) 配線電極の形成方法
JPS60242323A (ja) フオトセンサ−及びその製造方法
JPS61275819A (ja) 二端子素子アクテイブマトリクス液晶表示装置
JPS62176159A (ja) イメ−ジセンサの製造方法
JPS61292378A (ja) 薄膜半導体素子
JPS6195554A (ja) マイクロ波モノリシック回路及びその製造方法