JPS58137218A - シリコン単結晶基板の処理方法 - Google Patents

シリコン単結晶基板の処理方法

Info

Publication number
JPS58137218A
JPS58137218A JP57019115A JP1911582A JPS58137218A JP S58137218 A JPS58137218 A JP S58137218A JP 57019115 A JP57019115 A JP 57019115A JP 1911582 A JP1911582 A JP 1911582A JP S58137218 A JPS58137218 A JP S58137218A
Authority
JP
Japan
Prior art keywords
substrate
crystal substrate
hydrogen plasma
treatment
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57019115A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0514418B2 (enExample
Inventor
Kesao Noguchi
野口　今朝男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57019115A priority Critical patent/JPS58137218A/ja
Publication of JPS58137218A publication Critical patent/JPS58137218A/ja
Publication of JPH0514418B2 publication Critical patent/JPH0514418B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P95/90—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
JP57019115A 1982-02-09 1982-02-09 シリコン単結晶基板の処理方法 Granted JPS58137218A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57019115A JPS58137218A (ja) 1982-02-09 1982-02-09 シリコン単結晶基板の処理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57019115A JPS58137218A (ja) 1982-02-09 1982-02-09 シリコン単結晶基板の処理方法

Publications (2)

Publication Number Publication Date
JPS58137218A true JPS58137218A (ja) 1983-08-15
JPH0514418B2 JPH0514418B2 (enExample) 1993-02-25

Family

ID=11990471

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57019115A Granted JPS58137218A (ja) 1982-02-09 1982-02-09 シリコン単結晶基板の処理方法

Country Status (1)

Country Link
JP (1) JPS58137218A (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58208097A (ja) * 1982-05-27 1983-12-03 トツパン・ム−ア株式会社 綴じ合わせ用連続フオ−ム
US4859617A (en) * 1987-06-09 1989-08-22 Oki Electric Industry Co., Ltd. Thin-film transistor fabrication process
JPH05136440A (ja) * 1991-11-13 1993-06-01 Sanyo Electric Co Ltd 光起電力装置の製造方法
US5225366A (en) * 1990-06-22 1993-07-06 The United States Of America As Represented By The Secretary Of The Navy Apparatus for and a method of growing thin films of elemental semiconductors
US5246886A (en) * 1991-06-28 1993-09-21 Canon Kabushiki Kaisha Process for depositing a silicon-containing polycrystalline film on a substrate by way of growing Ge-crystalline nucleus
US5527718A (en) * 1993-12-28 1996-06-18 Sony Corporation Process for removing impurities from polycide electrode and insulating film using heat
US5543336A (en) * 1993-11-30 1996-08-06 Hitachi, Ltd. Removing damage caused by plasma etching and high energy implantation using hydrogen

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5617027A (en) * 1979-07-06 1981-02-18 Commissariat Energie Atomique Method of treating semiconductor device
JPS5690529A (en) * 1979-12-22 1981-07-22 Chiyou Lsi Gijutsu Kenkyu Kumiai Treatment of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5617027A (en) * 1979-07-06 1981-02-18 Commissariat Energie Atomique Method of treating semiconductor device
JPS5690529A (en) * 1979-12-22 1981-07-22 Chiyou Lsi Gijutsu Kenkyu Kumiai Treatment of semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58208097A (ja) * 1982-05-27 1983-12-03 トツパン・ム−ア株式会社 綴じ合わせ用連続フオ−ム
US4859617A (en) * 1987-06-09 1989-08-22 Oki Electric Industry Co., Ltd. Thin-film transistor fabrication process
US5225366A (en) * 1990-06-22 1993-07-06 The United States Of America As Represented By The Secretary Of The Navy Apparatus for and a method of growing thin films of elemental semiconductors
US5246886A (en) * 1991-06-28 1993-09-21 Canon Kabushiki Kaisha Process for depositing a silicon-containing polycrystalline film on a substrate by way of growing Ge-crystalline nucleus
JPH05136440A (ja) * 1991-11-13 1993-06-01 Sanyo Electric Co Ltd 光起電力装置の製造方法
US5543336A (en) * 1993-11-30 1996-08-06 Hitachi, Ltd. Removing damage caused by plasma etching and high energy implantation using hydrogen
US5527718A (en) * 1993-12-28 1996-06-18 Sony Corporation Process for removing impurities from polycide electrode and insulating film using heat

Also Published As

Publication number Publication date
JPH0514418B2 (enExample) 1993-02-25

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