JPS58135600A - プラズマ励起用高周波電力供給装置 - Google Patents
プラズマ励起用高周波電力供給装置Info
- Publication number
- JPS58135600A JPS58135600A JP57017659A JP1765982A JPS58135600A JP S58135600 A JPS58135600 A JP S58135600A JP 57017659 A JP57017659 A JP 57017659A JP 1765982 A JP1765982 A JP 1765982A JP S58135600 A JPS58135600 A JP S58135600A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- matching
- equivalent resistance
- output
- detector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003990 capacitor Substances 0.000 claims description 14
- 230000005284 excitation Effects 0.000 claims description 4
- 239000012071 phase Substances 0.000 description 10
- 230000010355 oscillation Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 238000001514 detection method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 208000007514 Herpes zoster Diseases 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- ZFXYFBGIUFBOJW-UHFFFAOYSA-N theophylline Chemical compound O=C1N(C)C(=O)N(C)C2=C1NC=N2 ZFXYFBGIUFBOJW-UHFFFAOYSA-N 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Landscapes
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57017659A JPS58135600A (ja) | 1982-02-08 | 1982-02-08 | プラズマ励起用高周波電力供給装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57017659A JPS58135600A (ja) | 1982-02-08 | 1982-02-08 | プラズマ励起用高周波電力供給装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58135600A true JPS58135600A (ja) | 1983-08-12 |
| JPH0243320B2 JPH0243320B2 (enrdf_load_stackoverflow) | 1990-09-27 |
Family
ID=11949968
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57017659A Granted JPS58135600A (ja) | 1982-02-08 | 1982-02-08 | プラズマ励起用高周波電力供給装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58135600A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60205241A (ja) * | 1984-03-02 | 1985-10-16 | ザ・パーキン―エルマー・コーポレイション | プラズマ放出源 |
| JPS6327034U (enrdf_load_stackoverflow) * | 1986-08-07 | 1988-02-22 | ||
| JPH02101744A (ja) * | 1988-10-11 | 1990-04-13 | Semiconductor Energy Lab Co Ltd | プラズマ反応方法 |
-
1982
- 1982-02-08 JP JP57017659A patent/JPS58135600A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60205241A (ja) * | 1984-03-02 | 1985-10-16 | ザ・パーキン―エルマー・コーポレイション | プラズマ放出源 |
| JPS6327034U (enrdf_load_stackoverflow) * | 1986-08-07 | 1988-02-22 | ||
| JPH02101744A (ja) * | 1988-10-11 | 1990-04-13 | Semiconductor Energy Lab Co Ltd | プラズマ反応方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0243320B2 (enrdf_load_stackoverflow) | 1990-09-27 |
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