JPS58131785A - 単一軸モ−ド発振半導体レ−ザ - Google Patents

単一軸モ−ド発振半導体レ−ザ

Info

Publication number
JPS58131785A
JPS58131785A JP1345282A JP1345282A JPS58131785A JP S58131785 A JPS58131785 A JP S58131785A JP 1345282 A JP1345282 A JP 1345282A JP 1345282 A JP1345282 A JP 1345282A JP S58131785 A JPS58131785 A JP S58131785A
Authority
JP
Japan
Prior art keywords
layer
mesa stripe
inp
periodic structure
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1345282A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6342876B2 (cg-RX-API-DMAC7.html
Inventor
Masafumi Seki
雅文 関
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
NTT Inc
Original Assignee
NEC Corp
Nippon Telegraph and Telephone Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Telegraph and Telephone Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1345282A priority Critical patent/JPS58131785A/ja
Publication of JPS58131785A publication Critical patent/JPS58131785A/ja
Publication of JPS6342876B2 publication Critical patent/JPS6342876B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H01S5/2277—Buried mesa structure ; Striped active layer mesa created by etching double channel planar buried heterostructure [DCPBH] laser

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP1345282A 1982-01-29 1982-01-29 単一軸モ−ド発振半導体レ−ザ Granted JPS58131785A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1345282A JPS58131785A (ja) 1982-01-29 1982-01-29 単一軸モ−ド発振半導体レ−ザ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1345282A JPS58131785A (ja) 1982-01-29 1982-01-29 単一軸モ−ド発振半導体レ−ザ

Publications (2)

Publication Number Publication Date
JPS58131785A true JPS58131785A (ja) 1983-08-05
JPS6342876B2 JPS6342876B2 (cg-RX-API-DMAC7.html) 1988-08-25

Family

ID=11833528

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1345282A Granted JPS58131785A (ja) 1982-01-29 1982-01-29 単一軸モ−ド発振半導体レ−ザ

Country Status (1)

Country Link
JP (1) JPS58131785A (cg-RX-API-DMAC7.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62169388A (ja) * 1986-01-21 1987-07-25 Oki Electric Ind Co Ltd 半導体レ−ザ素子
US4958202A (en) * 1986-09-12 1990-09-18 Kabushiki Kaisha Toshiba Semiconductor light-emitting device and method of manufacturing the same
JPH03268380A (ja) * 1990-03-16 1991-11-29 Toshiba Corp 半導体レーザ装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH037582U (cg-RX-API-DMAC7.html) * 1989-06-10 1991-01-24

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62169388A (ja) * 1986-01-21 1987-07-25 Oki Electric Ind Co Ltd 半導体レ−ザ素子
US4958202A (en) * 1986-09-12 1990-09-18 Kabushiki Kaisha Toshiba Semiconductor light-emitting device and method of manufacturing the same
JPH03268380A (ja) * 1990-03-16 1991-11-29 Toshiba Corp 半導体レーザ装置

Also Published As

Publication number Publication date
JPS6342876B2 (cg-RX-API-DMAC7.html) 1988-08-25

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