JPS58130546A - 炭化珪素質基板およびその製造方法 - Google Patents

炭化珪素質基板およびその製造方法

Info

Publication number
JPS58130546A
JPS58130546A JP56209991A JP20999181A JPS58130546A JP S58130546 A JPS58130546 A JP S58130546A JP 56209991 A JP56209991 A JP 56209991A JP 20999181 A JP20999181 A JP 20999181A JP S58130546 A JPS58130546 A JP S58130546A
Authority
JP
Japan
Prior art keywords
oxide
aluminum
silicon carbide
substrate
melting point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56209991A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6349903B2 (enExample
Inventor
Akira Enomoto
亮 榎本
Hidetoshi Yamauchi
山内　英俊
Shoji Tanigawa
庄司 谷川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ibiden Co Ltd
Ibigawa Electric Industry Co Ltd
Original Assignee
Ibiden Co Ltd
Ibigawa Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibiden Co Ltd, Ibigawa Electric Industry Co Ltd filed Critical Ibiden Co Ltd
Priority to JP56209991A priority Critical patent/JPS58130546A/ja
Priority to US06/451,940 priority patent/US4499147A/en
Publication of JPS58130546A publication Critical patent/JPS58130546A/ja
Priority to US06/858,834 priority patent/US4664946A/en
Publication of JPS6349903B2 publication Critical patent/JPS6349903B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
    • H01L21/4807—Ceramic parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Insulating Materials (AREA)
  • Ceramic Products (AREA)
JP56209991A 1981-12-28 1981-12-28 炭化珪素質基板およびその製造方法 Granted JPS58130546A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP56209991A JPS58130546A (ja) 1981-12-28 1981-12-28 炭化珪素質基板およびその製造方法
US06/451,940 US4499147A (en) 1981-12-28 1982-12-21 Silicon carbide substrates and a method of producing the same
US06/858,834 US4664946A (en) 1981-12-28 1986-04-29 Silicon carbide substrates and a method of producing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56209991A JPS58130546A (ja) 1981-12-28 1981-12-28 炭化珪素質基板およびその製造方法

Publications (2)

Publication Number Publication Date
JPS58130546A true JPS58130546A (ja) 1983-08-04
JPS6349903B2 JPS6349903B2 (enExample) 1988-10-06

Family

ID=16582041

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56209991A Granted JPS58130546A (ja) 1981-12-28 1981-12-28 炭化珪素質基板およびその製造方法

Country Status (1)

Country Link
JP (1) JPS58130546A (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6330386A (ja) * 1986-07-23 1988-02-09 日本特殊陶業株式会社 反応焼結炭化珪素製耐熱部品の製造方法
JPH03167846A (ja) * 1989-11-27 1991-07-19 Kyocera Corp 半導体素子収納用パッケージ
JPH03167845A (ja) * 1989-11-27 1991-07-19 Kyocera Corp 半導体素子収納用パッケージ
JPH03173155A (ja) * 1989-11-30 1991-07-26 Kyocera Corp 半導体素子収納用パッケージ
JPH03173154A (ja) * 1989-11-30 1991-07-26 Kyocera Corp 半導体素子収納用パッケージ
WO2005014171A1 (ja) * 2003-08-12 2005-02-17 Ngk Insulators, Ltd. 炭化珪素質触媒体及びその製造方法
JP2008516459A (ja) * 2004-10-13 2008-05-15 コミツサリア タ レネルジー アトミーク 電気絶縁性半導体基板のＭｇＯベースのコーティング及びその製造方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6330386A (ja) * 1986-07-23 1988-02-09 日本特殊陶業株式会社 反応焼結炭化珪素製耐熱部品の製造方法
JPH03167846A (ja) * 1989-11-27 1991-07-19 Kyocera Corp 半導体素子収納用パッケージ
JPH03167845A (ja) * 1989-11-27 1991-07-19 Kyocera Corp 半導体素子収納用パッケージ
JPH03173155A (ja) * 1989-11-30 1991-07-26 Kyocera Corp 半導体素子収納用パッケージ
JPH03173154A (ja) * 1989-11-30 1991-07-26 Kyocera Corp 半導体素子収納用パッケージ
WO2005014171A1 (ja) * 2003-08-12 2005-02-17 Ngk Insulators, Ltd. 炭化珪素質触媒体及びその製造方法
JP2008516459A (ja) * 2004-10-13 2008-05-15 コミツサリア タ レネルジー アトミーク 電気絶縁性半導体基板のＭｇＯベースのコーティング及びその製造方法
US8821961B2 (en) 2004-10-13 2014-09-02 Commissariat A L'energie Atomique MgO-based coating for electrically insulating semiconductive substrates and production method thereof

Also Published As

Publication number Publication date
JPS6349903B2 (enExample) 1988-10-06

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