JPS58125965A - 撮像装置 - Google Patents

撮像装置

Info

Publication number
JPS58125965A
JPS58125965A JP57008438A JP843882A JPS58125965A JP S58125965 A JPS58125965 A JP S58125965A JP 57008438 A JP57008438 A JP 57008438A JP 843882 A JP843882 A JP 843882A JP S58125965 A JPS58125965 A JP S58125965A
Authority
JP
Japan
Prior art keywords
region
period
bias voltage
substrate
photoelectric conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57008438A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0377714B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Tanigawa
紘 谷川
Eiichi Takeuchi
竹内　映一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57008438A priority Critical patent/JPS58125965A/ja
Publication of JPS58125965A publication Critical patent/JPS58125965A/ja
Publication of JPH0377714B2 publication Critical patent/JPH0377714B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression

Landscapes

  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP57008438A 1982-01-22 1982-01-22 撮像装置 Granted JPS58125965A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57008438A JPS58125965A (ja) 1982-01-22 1982-01-22 撮像装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57008438A JPS58125965A (ja) 1982-01-22 1982-01-22 撮像装置

Publications (2)

Publication Number Publication Date
JPS58125965A true JPS58125965A (ja) 1983-07-27
JPH0377714B2 JPH0377714B2 (enrdf_load_stackoverflow) 1991-12-11

Family

ID=11693128

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57008438A Granted JPS58125965A (ja) 1982-01-22 1982-01-22 撮像装置

Country Status (1)

Country Link
JP (1) JPS58125965A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60143077A (ja) * 1983-12-29 1985-07-29 Konishiroku Photo Ind Co Ltd 固体ビデオカメラ
JPH02199869A (ja) * 1989-01-30 1990-08-08 Nec Corp 固体撮像素子

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60143077A (ja) * 1983-12-29 1985-07-29 Konishiroku Photo Ind Co Ltd 固体ビデオカメラ
JPH02199869A (ja) * 1989-01-30 1990-08-08 Nec Corp 固体撮像素子

Also Published As

Publication number Publication date
JPH0377714B2 (enrdf_load_stackoverflow) 1991-12-11

Similar Documents

Publication Publication Date Title
US4322753A (en) Smear and/or blooming in a solid state charge transfer image pickup device
Yadid-Pecht Wide-dynamic-range sensors
US4688098A (en) Solid state image sensor with means for removing excess photocharges
Yamada et al. A progressive scan CCD image sensor for DSC applications
Yamada CCD image sensors
JPH0453149B2 (enrdf_load_stackoverflow)
JP2012527106A (ja) 内蔵式超高感度画像センサ
JPS58125965A (ja) 撮像装置
JPH0377713B2 (enrdf_load_stackoverflow)
Goto et al. Quarter video graphics array full-digital image sensing with wide dynamic range and linear output using pixel-wise 3D integration
JP3590158B2 (ja) Ｍｏｓ増幅型撮像装置
JPH0473834B2 (enrdf_load_stackoverflow)
JPS624362A (ja) 固体撮像素子
JPS6058779A (ja) 固体撮像装置
Endo et al. A photoelectric conversion-characteristic control method for interline transfer CCD imager
US4638355A (en) System and methods for improving video camera performance
Arai et al. A 300-kpixel ultrahigh-speed charge-coupled device with a dynamic range of 48.6 dB at 1 million frames per second
JPH0377711B2 (enrdf_load_stackoverflow)
JPS604379A (ja) 固体カメラ
USRE27951E (en) Device for converting a physical pattern into an electric signal as a function of time utilizing an analog shift register
JPH0377712B2 (enrdf_load_stackoverflow)
JPH0566796B2 (enrdf_load_stackoverflow)
Nakamura et al. A random noise reduction method for an amorphous silicon photoconversion layer overlaid CCD imager
JPH0530433A (ja) 撮像装置
JPH04368176A (ja) 固体撮像装置