JPH0377712B2 - - Google Patents

Info

Publication number
JPH0377712B2
JPH0377712B2 JP57008176A JP817682A JPH0377712B2 JP H0377712 B2 JPH0377712 B2 JP H0377712B2 JP 57008176 A JP57008176 A JP 57008176A JP 817682 A JP817682 A JP 817682A JP H0377712 B2 JPH0377712 B2 JP H0377712B2
Authority
JP
Japan
Prior art keywords
region
photoelectric conversion
type
reverse bias
bias voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57008176A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58125961A (ja
Inventor
Eiichi Takeuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP57008176A priority Critical patent/JPS58125961A/ja
Publication of JPS58125961A publication Critical patent/JPS58125961A/ja
Publication of JPH0377712B2 publication Critical patent/JPH0377712B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression

Landscapes

  • Transforming Light Signals Into Electric Signals (AREA)
JP57008176A 1982-01-21 1982-01-21 電荷転送撮像装置の駆動方法 Granted JPS58125961A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57008176A JPS58125961A (ja) 1982-01-21 1982-01-21 電荷転送撮像装置の駆動方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57008176A JPS58125961A (ja) 1982-01-21 1982-01-21 電荷転送撮像装置の駆動方法

Publications (2)

Publication Number Publication Date
JPS58125961A JPS58125961A (ja) 1983-07-27
JPH0377712B2 true JPH0377712B2 (enrdf_load_stackoverflow) 1991-12-11

Family

ID=11686003

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57008176A Granted JPS58125961A (ja) 1982-01-21 1982-01-21 電荷転送撮像装置の駆動方法

Country Status (1)

Country Link
JP (1) JPS58125961A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2517882B2 (ja) * 1986-12-23 1996-07-24 ソニー株式会社 固体撮像装置
JP2605294B2 (ja) * 1987-08-14 1997-04-30 ソニー株式会社 固体撮像装置
JP2565247B2 (ja) * 1995-04-21 1996-12-18 ソニー株式会社 固体撮像装置及びビデオカメラの露光時間制御方法

Also Published As

Publication number Publication date
JPS58125961A (ja) 1983-07-27

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