JPS58125688A - 化合物半導体単結晶製造装置 - Google Patents

化合物半導体単結晶製造装置

Info

Publication number
JPS58125688A
JPS58125688A JP57005760A JP576082A JPS58125688A JP S58125688 A JPS58125688 A JP S58125688A JP 57005760 A JP57005760 A JP 57005760A JP 576082 A JP576082 A JP 576082A JP S58125688 A JPS58125688 A JP S58125688A
Authority
JP
Japan
Prior art keywords
crucible
melt
compound semiconductor
crystal
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57005760A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6127358B2 (cg-RX-API-DMAC7.html
Inventor
Shintaro Miyazawa
宮澤　信太郎
Shinichi Akai
赤井　慎一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp, Sumitomo Electric Industries Ltd filed Critical Nippon Telegraph and Telephone Corp
Priority to JP57005760A priority Critical patent/JPS58125688A/ja
Publication of JPS58125688A publication Critical patent/JPS58125688A/ja
Publication of JPS6127358B2 publication Critical patent/JPS6127358B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B27/00—Single-crystal growth under a protective fluid
    • C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP57005760A 1982-01-18 1982-01-18 化合物半導体単結晶製造装置 Granted JPS58125688A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57005760A JPS58125688A (ja) 1982-01-18 1982-01-18 化合物半導体単結晶製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57005760A JPS58125688A (ja) 1982-01-18 1982-01-18 化合物半導体単結晶製造装置

Publications (2)

Publication Number Publication Date
JPS58125688A true JPS58125688A (ja) 1983-07-26
JPS6127358B2 JPS6127358B2 (cg-RX-API-DMAC7.html) 1986-06-25

Family

ID=11620073

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57005760A Granted JPS58125688A (ja) 1982-01-18 1982-01-18 化合物半導体単結晶製造装置

Country Status (1)

Country Link
JP (1) JPS58125688A (cg-RX-API-DMAC7.html)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS472946U (cg-RX-API-DMAC7.html) * 1971-01-28 1972-09-01

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS472946U (cg-RX-API-DMAC7.html) * 1971-01-28 1972-09-01

Also Published As

Publication number Publication date
JPS6127358B2 (cg-RX-API-DMAC7.html) 1986-06-25

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