JPS58123717A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS58123717A
JPS58123717A JP570382A JP570382A JPS58123717A JP S58123717 A JPS58123717 A JP S58123717A JP 570382 A JP570382 A JP 570382A JP 570382 A JP570382 A JP 570382A JP S58123717 A JPS58123717 A JP S58123717A
Authority
JP
Japan
Prior art keywords
electron beam
wafer
scanning
deflecting
electron beams
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP570382A
Other languages
English (en)
Japanese (ja)
Other versions
JPH04380B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Yasuda
洋 安田
Haruo Tsuchikawa
土川　春穂
Kenichi Kawashima
川島　憲一
Seiichiro Kawamura
河村　誠一郎
Motoo Nakano
元雄 中野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP570382A priority Critical patent/JPS58123717A/ja
Publication of JPS58123717A publication Critical patent/JPS58123717A/ja
Publication of JPH04380B2 publication Critical patent/JPH04380B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/04—Pattern deposit, e.g. by using masks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
JP570382A 1982-01-18 1982-01-18 半導体装置の製造方法 Granted JPS58123717A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP570382A JPS58123717A (ja) 1982-01-18 1982-01-18 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP570382A JPS58123717A (ja) 1982-01-18 1982-01-18 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58123717A true JPS58123717A (ja) 1983-07-23
JPH04380B2 JPH04380B2 (enrdf_load_stackoverflow) 1992-01-07

Family

ID=11618467

Family Applications (1)

Application Number Title Priority Date Filing Date
JP570382A Granted JPS58123717A (ja) 1982-01-18 1982-01-18 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58123717A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60152019A (ja) * 1984-01-20 1985-08-10 Agency Of Ind Science & Technol 電子ビームアニール方法
JPS62245619A (ja) * 1986-04-17 1987-10-26 Nec Corp 電子ビ−ムアニ−ル装置
JPS6450407A (en) * 1987-08-21 1989-02-27 Agency Ind Science Techn Manufacture of semiconductor single crystal layer

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS528672A (en) * 1975-07-09 1977-01-22 Jidosha Seiki Kogyo Kk Car washing device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS528672A (en) * 1975-07-09 1977-01-22 Jidosha Seiki Kogyo Kk Car washing device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60152019A (ja) * 1984-01-20 1985-08-10 Agency Of Ind Science & Technol 電子ビームアニール方法
JPS62245619A (ja) * 1986-04-17 1987-10-26 Nec Corp 電子ビ−ムアニ−ル装置
JPS6450407A (en) * 1987-08-21 1989-02-27 Agency Ind Science Techn Manufacture of semiconductor single crystal layer

Also Published As

Publication number Publication date
JPH04380B2 (enrdf_load_stackoverflow) 1992-01-07

Similar Documents

Publication Publication Date Title
US3336159A (en) Method for growing single thin film crystals
JPS60180113A (ja) 単結晶半導体装置の製法
JPH0476490B2 (enrdf_load_stackoverflow)
JPS58123717A (ja) 半導体装置の製造方法
JPH0360026A (ja) 結晶性シリコン膜の製造方法
JPS6115319A (ja) 半導体装置の製造方法
JPS6319809A (ja) レ−ザビ−ムアニ−ル装置
JPS5856406A (ja) 半導体膜の製造方法
JP2022122413A (ja) オンアクシス炭化珪素単結晶成長法
JP2714109B2 (ja) 結晶膜の製造方法
GB2112205A (en) A thermal processing system for semiconductors and other materials using two or more electron beams
JPS61187222A (ja) 半導体単結晶層の製造方法
JPH0779081B2 (ja) 半導体単結晶層の製造方法
JPH0136972B2 (enrdf_load_stackoverflow)
JPS6292427A (ja) 半導体製造装置
JPH0136970B2 (enrdf_load_stackoverflow)
JPS60152019A (ja) 電子ビームアニール方法
JPH0235451B2 (enrdf_load_stackoverflow)
JP3484547B2 (ja) 薄膜形成方法
JPS60257123A (ja) 表面層帯溶融結晶成長装置
JPH02105517A (ja) 半導体装置の製造方法
JPS60191089A (ja) 単結晶薄膜の製造方法
Givargizov Experimental Techniques for Oriented Crystallization on Amorphous Substrates
JPH0236055B2 (enrdf_load_stackoverflow)
JPH0371767B2 (enrdf_load_stackoverflow)