JPS58122784A - 太陽電池 - Google Patents

太陽電池

Info

Publication number
JPS58122784A
JPS58122784A JP57004978A JP497882A JPS58122784A JP S58122784 A JPS58122784 A JP S58122784A JP 57004978 A JP57004978 A JP 57004978A JP 497882 A JP497882 A JP 497882A JP S58122784 A JPS58122784 A JP S58122784A
Authority
JP
Japan
Prior art keywords
type
layer
thickness
substrate
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57004978A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0472391B2 (enrdf_load_stackoverflow
Inventor
Nobuhiro Fukuda
福田　信弘
Yutaka Ohashi
豊 大橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Toatsu Chemicals Inc
Original Assignee
Mitsui Toatsu Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Toatsu Chemicals Inc filed Critical Mitsui Toatsu Chemicals Inc
Priority to JP57004978A priority Critical patent/JPS58122784A/ja
Publication of JPS58122784A publication Critical patent/JPS58122784A/ja
Publication of JPH0472391B2 publication Critical patent/JPH0472391B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
JP57004978A 1982-01-18 1982-01-18 太陽電池 Granted JPS58122784A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57004978A JPS58122784A (ja) 1982-01-18 1982-01-18 太陽電池

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57004978A JPS58122784A (ja) 1982-01-18 1982-01-18 太陽電池

Publications (2)

Publication Number Publication Date
JPS58122784A true JPS58122784A (ja) 1983-07-21
JPH0472391B2 JPH0472391B2 (enrdf_load_stackoverflow) 1992-11-18

Family

ID=11598678

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57004978A Granted JPS58122784A (ja) 1982-01-18 1982-01-18 太陽電池

Country Status (1)

Country Link
JP (1) JPS58122784A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6193675A (ja) * 1984-10-12 1986-05-12 Sanyo Electric Co Ltd 光起電力装置の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5671927A (en) * 1979-11-15 1981-06-15 Canon Inc Manufacture of amorphous hydro-silicon layer
JPS5683929A (en) * 1979-12-12 1981-07-08 Ibm Method of chemically vapor adhering
JPS56107551A (en) * 1980-01-30 1981-08-26 Fuji Photo Film Co Ltd Amorphous semiconductor having chemical modification

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5671927A (en) * 1979-11-15 1981-06-15 Canon Inc Manufacture of amorphous hydro-silicon layer
JPS5683929A (en) * 1979-12-12 1981-07-08 Ibm Method of chemically vapor adhering
JPS56107551A (en) * 1980-01-30 1981-08-26 Fuji Photo Film Co Ltd Amorphous semiconductor having chemical modification

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6193675A (ja) * 1984-10-12 1986-05-12 Sanyo Electric Co Ltd 光起電力装置の製造方法

Also Published As

Publication number Publication date
JPH0472391B2 (enrdf_load_stackoverflow) 1992-11-18

Similar Documents

Publication Publication Date Title
US4409605A (en) Amorphous semiconductors equivalent to crystalline semiconductors
CN103718276B (zh) 使氢化非晶硅和非晶氢化硅合金稳定化的方法
US6878921B2 (en) Photovoltaic device and manufacturing method thereof
US4400409A (en) Method of making p-doped silicon films
US5646050A (en) Increasing stabilized performance of amorphous silicon based devices produced by highly hydrogen diluted lower temperature plasma deposition
JP2984537B2 (ja) 光起電力素子
US4520380A (en) Amorphous semiconductors equivalent to crystalline semiconductors
US4396793A (en) Compensated amorphous silicon solar cell
US4710786A (en) Wide band gap semiconductor alloy material
US4415760A (en) Amorphous silicon solar cells incorporating an insulating layer in the body of amorphous silicon and a method of suppressing the back diffusion of holes into an N-type region
US4677738A (en) Method of making a photovoltaic panel
JP2692091B2 (ja) 炭化ケイ素半導体膜およびその製造方法
US4839312A (en) Fluorinated precursors from which to fabricate amorphous semiconductor material
US4799968A (en) Photovoltaic device
US4703336A (en) Photodetection and current control devices
JP2675754B2 (ja) 太陽電池
CN118476039A (zh) 太阳能电池及其形成方法
JPS58122784A (ja) 太陽電池
JPS6132416A (ja) 半導体装置の製造方法
JPH04290274A (ja) 光電変換装置
Shuai et al. Properties of phosphorous-doped large-grained microcrystalline silicon thin film and the application on HIT solar cell
JPH0612835B2 (ja) 光電変換素子の製法
KR100419383B1 (ko) 피-아이-엔(p-i-n) 비정질 실리콘 태양전지의 제조방법
Itozaki et al. Amorphous Silicon-Germanium Deposited by Photo-CVD
JP2003218030A (ja) 結晶シリコン半導体装置およびその製造方法