JPS58122750A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS58122750A JPS58122750A JP472582A JP472582A JPS58122750A JP S58122750 A JPS58122750 A JP S58122750A JP 472582 A JP472582 A JP 472582A JP 472582 A JP472582 A JP 472582A JP S58122750 A JPS58122750 A JP S58122750A
- Authority
- JP
- Japan
- Prior art keywords
- film
- mask
- resist
- layer
- sio2
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 18
- 238000005530 etching Methods 0.000 claims abstract description 8
- 238000001020 plasma etching Methods 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 19
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 229920001721 polyimide Polymers 0.000 claims description 8
- 238000000059 patterning Methods 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 239000004642 Polyimide Substances 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 39
- 239000000758 substrate Substances 0.000 abstract description 14
- 150000001875 compounds Chemical class 0.000 abstract description 6
- 239000010409 thin film Substances 0.000 abstract description 4
- 230000010354 integration Effects 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 5
- 229910052906 cristobalite Inorganic materials 0.000 abstract 5
- 239000000377 silicon dioxide Substances 0.000 abstract 5
- 235000012239 silicon dioxide Nutrition 0.000 abstract 5
- 229910052682 stishovite Inorganic materials 0.000 abstract 5
- 229910052905 tridymite Inorganic materials 0.000 abstract 5
- 101000617726 Homo sapiens Pregnancy-specific beta-1-glycoprotein 3 Proteins 0.000 abstract 1
- 102100022020 Pregnancy-specific beta-1-glycoprotein 3 Human genes 0.000 abstract 1
- 238000000206 photolithography Methods 0.000 description 5
- 238000009499 grossing Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP472582A JPS58122750A (ja) | 1982-01-14 | 1982-01-14 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP472582A JPS58122750A (ja) | 1982-01-14 | 1982-01-14 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58122750A true JPS58122750A (ja) | 1983-07-21 |
| JPH0123944B2 JPH0123944B2 (enrdf_load_stackoverflow) | 1989-05-09 |
Family
ID=11591863
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP472582A Granted JPS58122750A (ja) | 1982-01-14 | 1982-01-14 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58122750A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62120714A (ja) * | 1985-11-20 | 1987-06-02 | Fujitsu Ltd | デイジタル信号の歪補償回路 |
| JPH03173430A (ja) * | 1989-12-01 | 1991-07-26 | Matsushita Electron Corp | 配線の形成方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56122143A (en) * | 1980-02-29 | 1981-09-25 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor device |
-
1982
- 1982-01-14 JP JP472582A patent/JPS58122750A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56122143A (en) * | 1980-02-29 | 1981-09-25 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62120714A (ja) * | 1985-11-20 | 1987-06-02 | Fujitsu Ltd | デイジタル信号の歪補償回路 |
| JPH03173430A (ja) * | 1989-12-01 | 1991-07-26 | Matsushita Electron Corp | 配線の形成方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0123944B2 (enrdf_load_stackoverflow) | 1989-05-09 |
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