JPS58120645U - Vacuum processing equipment - Google Patents
Vacuum processing equipmentInfo
- Publication number
- JPS58120645U JPS58120645U JP1699682U JP1699682U JPS58120645U JP S58120645 U JPS58120645 U JP S58120645U JP 1699682 U JP1699682 U JP 1699682U JP 1699682 U JP1699682 U JP 1699682U JP S58120645 U JPS58120645 U JP S58120645U
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- vacuum processing
- processing tank
- processing equipment
- providing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Tunnel Furnaces (AREA)
- Drying Of Semiconductors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は本考案装置の１例の截断側面図、第２図はその
要部の拡大断面図、第３図は被膜形成状態の断面図であ
る。
１・・・・・・真空排気孔、２・・・・・・真空処理槽
、３・・・・・・□サブストレート、４・・曲サブスト
レート旋回装置、５・・・・・・通電装置、６・・・・
・・不活性ガス導入孔、７・・・・・・蒸発源。FIG. 1 is a cutaway side view of one example of the device of the present invention, FIG. 2 is an enlarged sectional view of the main part thereof, and FIG. 3 is a sectional view of the state in which a coating is formed. 1...Vacuum exhaust hole, 2...Vacuum processing tank, 3...□Substrate, 4...Curved substrate turning device, 5...Electrification Device, 6...
...Inert gas introduction hole, 7... Evaporation source.
Claims (1)
レート３を自転させ且つこれに遊星運動を行なわせるサ
ブストレート旋回装置４を設け、該旋回装置４に該サブ
ストレート３へ陰極電位を印加する通電装置５を設ける
と共に該真空処理槽２にアルゴンその他の不活性ガス導
入孔６を設けて該サブストレート３に対するエツチング
装置を構成させ、さらに該真空処理槽２の下方に該サブ
ストレート３に被膜３ａを形成すべく蒸癲源７を設けて
成る真空処理装置。A substrate turning device 4 for rotating the substrate 3 and making it perform planetary motion is provided above the vacuum processing tank 2 equipped with the vacuum exhaust hole 1, and a cathode potential is applied to the substrate 3 to the turning device 4. An etching device for the substrate 3 is constructed by providing an energizing device 5 for applying electricity and providing an inert gas introduction hole 6 such as argon in the vacuum processing tank 2. Further, the substrate 3 is provided below the vacuum processing tank 2. A vacuum processing apparatus is provided with an evaporation source 7 to form a coating 3a on the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1699682U JPS58120645U (en) | 1982-02-12 | 1982-02-12 | Vacuum processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1699682U JPS58120645U (en) | 1982-02-12 | 1982-02-12 | Vacuum processing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58120645U true JPS58120645U (en) | 1983-08-17 |
Family
ID=30029331
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1699682U Pending JPS58120645U (en) | 1982-02-12 | 1982-02-12 | Vacuum processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58120645U (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS533167A (en) * | 1976-06-30 | 1978-01-12 | Fujitsu Ltd | Semiconductor evaporating apparatus |
| JPS5332851B2 (en) * | 1973-01-31 | 1978-09-11 |
-
1982
- 1982-02-12 JP JP1699682U patent/JPS58120645U/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5332851B2 (en) * | 1973-01-31 | 1978-09-11 | ||
| JPS533167A (en) * | 1976-06-30 | 1978-01-12 | Fujitsu Ltd | Semiconductor evaporating apparatus |
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