JPS58113974A - Liquid crystal display - Google Patents
Liquid crystal displayInfo
- Publication number
- JPS58113974A JPS58113974A JP56214041A JP21404181A JPS58113974A JP S58113974 A JPS58113974 A JP S58113974A JP 56214041 A JP56214041 A JP 56214041A JP 21404181 A JP21404181 A JP 21404181A JP S58113974 A JPS58113974 A JP S58113974A
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- thin film
- film transistor
- crystal display
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
（１）発明の技術分野
本発明は、液晶と薄膜トランジスタマトリックスアレイ
とから成る液晶表示装置に係り、特に鮮明な表示を可能
とする液晶表示装置の構造に関する。DETAILED DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to a liquid crystal display device comprising a liquid crystal and a thin film transistor matrix array, and particularly to a structure of a liquid crystal display device that enables clear display.
（２）従来技術と問題点
従来は第１図のようにＸ選択線ｌとＹ選択線２とにより
薄膜トランジスタ３および液晶駆動電極４をマトリック
アレイとした液晶表示装置において、薄膜トランジスタ
３は第２図のように絶縁物基板す上にゲート電極６（Ｘ
選択１１１１と接続）、ゲート絶縁Ｗｘ７、ア毫−ファ
スシリコン膜８、ソース電極９（Ｙ選択＠２と接続）、
ドレイン電極１Ｇ（液晶駆動電極４と接続）、バッジペ
ージ曹ンｊ［１１１，および嬉光膜１２を積層して形成
した構造となりていたためにこの部分が薄膜トランジス
タの厚さく約１．５μ肩）だけ飛び出た形状となりてい
た。この突起のために液晶の配向に使われるポリイミド
オたはポリビニールアルコール１３のスピンコーテング
においてコーテング膜厚のむらを生じ、また、液晶の配
向のためにコーデング稜ブ２シがけを行ない、方向性を
持った微細溝を形成するが、この溝付けにむらが生じる
。(2) Prior Art and Problems Conventionally, in a liquid crystal display device in which a thin film transistor 3 and a liquid crystal drive electrode 4 are arranged in a matrix array by an X selection line 1 and a Y selection line 2 as shown in FIG. A gate electrode 6 (X
(connected to selection 1111), gate insulation Wx7, amorphous silicon film 8, source electrode 9 (connected to Y selection @2),
Since the structure was formed by laminating the drain electrode 1G (connected to the liquid crystal drive electrode 4), the badge page electrode 111, and the transparent film 12, this part was the thickness of the thin film transistor (approximately 1.5 μm). It had a protruding shape. These protrusions cause uneven coating film thickness during spin coating of polyimide or polyvinyl alcohol 13 used for alignment of liquid crystals, and also cause coating ridges to be applied to align the liquid crystals to improve directionality. However, the grooves are uneven.
（３）発明の目的
本発明の目的は前述のようなコーテング膜厚のむらや方
向性微細溝の不均一性をなくシ、鮮＃４ｙｃ表示を可能
とすることである。(3) Purpose of the Invention The purpose of the present invention is to eliminate the uneven coating film thickness and the non-uniformity of the directional fine grooves as described above, and to enable bright #4yc display.
（４）発明の構成
薄膜トランジスタを絶縁物基板の溝中に埋め込んだ構造
とすることによりて前記の突起をなくシ、〜前記の目的
を達成しようとするものである。(4) Structure of the Invention By forming the thin film transistor in a structure in which it is embedded in a groove of an insulating substrate, the above-mentioned protrusion is eliminated, and the above-mentioned objects are attempted to be achieved.
（５）発明の実施例
第３図は本発明の一実施例を示す図であり、ガラス基板
５に薄膜トランジスタの幅と厚さに等しい幅と深さを持
った溝１４を形成し、その溝中にＮｉ０ｒゲート電極６
、ｓｉｏ、のゲート絶縁膜７、アモーファスシリコンＨ
／Ｘ８、Ａｊのソース電極９、Ａ４のドレイン電極１０
、ＳｉＯ，のパッジページ曹ン膜１１、およびＮｉ０ｒ
（７）遮光膜１２を積層して形成した構造とすれは薄膜
トランジスタの部分に生ずる突起はほとんどなくするこ
とが出来る。(5) Embodiment of the invention FIG. 3 shows an embodiment of the invention, in which a groove 14 having a width and depth equal to the width and thickness of a thin film transistor is formed in a glass substrate 5. Ni0r gate electrode 6 inside
, sio, gate insulating film 7, amorphous silicon H
/X8, source electrode 9 of Aj, drain electrode 10 of A4
, SiO, Padpage carbon film 11, and Ni0r
(7) With the structure formed by laminating the light shielding film 12, it is possible to almost eliminate protrusions that occur in the thin film transistor portion.
（６）発明の効果
以上のような構造により液晶の配向に使われるポリイミ
ドＩたはポリビニールアルコールのスピンコーテングは
均一に行なわれ、ブラシかけによる方向性微細溝も均一
ζこ形成され、鮮明な表示が可能となる。 冒
なあ、配向処理としてＳ ｉ Ｏ，寺の斜め蒸着法を使
う方法が知られているが、この方法においても突起の斜
面において斜め蒸着効果に差異を生じ１．．１解消する
ことが出来る。また、薄膜トランジスタを埋め込む溝は
薄膜トランジスタの長さに等しい長さを持ち、各薄膜ト
ランジスタ毎に独立した溝としてもよいし、Ｘ選択線に
平行な薄膜トランジスタ列を一本の溝で貫通する形でも
よい・(6) Effects of the invention Due to the above-described structure, spin coating of polyimide I or polyvinyl alcohol used for liquid crystal alignment is uniformly performed, and the directional fine grooves formed by brushing are uniformly formed, resulting in clear and sharp coating. Display becomes possible. Incidentally, a method using S i O and Tera's oblique evaporation method is known as an orientation treatment, but even in this method, there is a difference in the oblique evaporation effect on the slope of the protrusion. ．． 1 can be resolved. Furthermore, the trench in which the thin film transistor is buried has a length equal to the length of the thin film transistor, and may be an independent trench for each thin film transistor, or may be a single trench penetrating the thin film transistor array parallel to the X selection line.
第１図は薄膜トランジスタｉトリックスアレイのｈ面図
で、第２図は従来例、第３図は本考凍の一実施例である
。ここでｌはＸ選択線、２はＸ選択線、３は薄膜トラン
ジスタ、４は液晶駆動電極、５は絶縁物基板、６はゲー
ト電極（Ｘ選択線１に接続されている）、７はゲート絶
縁膜、８はアモーファスシリコン膜、９はソース電極（
Ｘ選択線２に接続されている）、１０はドレイン電極（
液晶駆動電極４に接続されている）、１１はバッジベー
ジ茸ン膜、１２は遮光膜、１３は液晶配向用ポリイミド
またはポリビニールアルコ−小−１口は溝である。
第２図
第３０FIG. 1 is an h-plane view of a thin film transistor i-trix array, FIG. 2 is a conventional example, and FIG. 3 is an embodiment of the present invention. Here, l is the X selection line, 2 is the X selection line, 3 is the thin film transistor, 4 is the liquid crystal drive electrode, 5 is the insulator substrate, 6 is the gate electrode (connected to the X selection line 1), and 7 is the gate insulation 8 is an amorphous silicon film, 9 is a source electrode (
connected to the X selection line 2), 10 is the drain electrode (
11 is a mushroom film, 12 is a light-shielding film, and 13 is a polyimide or polyvinyl alcohol for liquid crystal alignment. Figure 2 30
Claims (1)
スプレイと液晶とより成る液晶表示装置において、該薄
膜トランジスタを該絶縁物基板の中に埋め込んだ構造と
したことを特徴とする液晶表示装置。1. A liquid crystal display device comprising a thin film transistor matrix layer formed on an insulating substrate and a liquid crystal, characterized in that the thin film transistor is embedded in the insulating substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56214041A JPS58113974A (en) | 1981-12-26 | 1981-12-26 | Liquid crystal display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56214041A JPS58113974A (en) | 1981-12-26 | 1981-12-26 | Liquid crystal display |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58113974A true JPS58113974A (en) | 1983-07-07 |
Family
ID=16649292
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56214041A Pending JPS58113974A (en) | 1981-12-26 | 1981-12-26 | Liquid crystal display |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58113974A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61187272A (en) * | 1985-02-14 | 1986-08-20 | Matsushita Electric Ind Co Ltd | Thin-film field-effect transistor and manufacture thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5672421A (en) * | 1979-11-19 | 1981-06-16 | Matsushita Electric Ind Co Ltd | Liquid-crystal display panel |
| JPS56140324A (en) * | 1980-04-02 | 1981-11-02 | Canon Inc | Display device |
-
1981
- 1981-12-26 JP JP56214041A patent/JPS58113974A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5672421A (en) * | 1979-11-19 | 1981-06-16 | Matsushita Electric Ind Co Ltd | Liquid-crystal display panel |
| JPS56140324A (en) * | 1980-04-02 | 1981-11-02 | Canon Inc | Display device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61187272A (en) * | 1985-02-14 | 1986-08-20 | Matsushita Electric Ind Co Ltd | Thin-film field-effect transistor and manufacture thereof |
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