JPH02234134A - Active matrix substrate for liquid crystal display device - Google Patents

Active matrix substrate for liquid crystal display device

Info

Publication number
JPH02234134A
JPH02234134A JP5534489A JP5534489A JPH02234134A JP H02234134 A JPH02234134 A JP H02234134A JP 5534489 A JP5534489 A JP 5534489A JP 5534489 A JP5534489 A JP 5534489A JP H02234134 A JPH02234134 A JP H02234134A
Authority
JP
Japan
Prior art keywords
etc
liquid crystal
film
step
formed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5534489A
Inventor
Mikio Sakamoto
Ken Sumiyoshi
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corp filed Critical Nec Corp
Priority to JP5534489A priority Critical patent/JPH02234134A/en
Publication of JPH02234134A publication Critical patent/JPH02234134A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To obtain the active matrix substrate for the liquid crystal display device which has high yield and high performance by making a high-steepness step of aluminum wiring, etc., into a smooth flat surface by a process wherein a flattening film is formed by spin coating.
CONSTITUTION: For example, a specific material is applied by spin coating, etc., to form the transparent insulation flattening film 110 by baking it. Then a specific device layer is adhered on a glass substrate 101 with an adhesive layer 102 and the flattening film 110 reduces the step of about 1μm formed of matrix wiring, etc., to, for example, about 0.1 - 0.2μm. Further, a step of matrix wiring, etc., is steep by photolithography, but made smooth by the flattening film 110. Therefore, a liquid crystal orientated film 112 formed on a display electrode 111, etc., becomes flat. Consequently, the whole liquid crystal orientated film 112 is rubbed uniformly without spoiling a TFT and orientated film defects are eliminated.
COPYRIGHT: (C)1990,JPO&Japio
JP5534489A 1989-03-07 1989-03-07 Active matrix substrate for liquid crystal display device Pending JPH02234134A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5534489A JPH02234134A (en) 1989-03-07 1989-03-07 Active matrix substrate for liquid crystal display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5534489A JPH02234134A (en) 1989-03-07 1989-03-07 Active matrix substrate for liquid crystal display device

Publications (1)

Publication Number Publication Date
JPH02234134A true JPH02234134A (en) 1990-09-17

Family

ID=12995891

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5534489A Pending JPH02234134A (en) 1989-03-07 1989-03-07 Active matrix substrate for liquid crystal display device

Country Status (1)

Country Link
JP (1) JPH02234134A (en)

Cited By (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04177326A (en) * 1990-11-13 1992-06-24 Semiconductor Energy Lab Co Ltd Liquid crystal display device and driving method thereof
JPH04177325A (en) * 1990-11-13 1992-06-24 Semiconductor Energy Lab Co Ltd Liquid crystal display device
US5486939A (en) * 1994-04-28 1996-01-23 Xerox Corporation Thin-film structure with insulating and smoothing layers between crossing conductive lines
US5721601A (en) * 1994-09-29 1998-02-24 Sanyo Electric Co., Ltd. Display units having two insolating films and a planarizing film and process for producing the same
US5899547A (en) * 1990-11-26 1999-05-04 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US5933205A (en) * 1991-03-26 1999-08-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for driving the same
US5956105A (en) * 1991-06-14 1999-09-21 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US6157428A (en) * 1997-05-07 2000-12-05 Sanyo Electric Co., Ltd. Liquid crystal display
US6195139B1 (en) 1992-03-04 2001-02-27 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US6204905B1 (en) 1997-11-18 2001-03-20 Sanyo Electric Co., Ltd. Vertical alignment liquid crystal display device having planarized substrate surface
US6242758B1 (en) 1994-12-27 2001-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device employing resinous material, method of fabricating the same and electrooptical device
US6246458B1 (en) 1997-11-18 2001-06-12 Sanyo Electric Co., Ltd. Method for manufacturing liquid crystal display
US6369788B1 (en) 1990-11-26 2002-04-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US6441468B1 (en) 1995-12-14 2002-08-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2002095834A1 (en) * 2001-05-18 2002-11-28 Sanyo Electric Co., Ltd. Thin film transistor and active matrix type display unit production methods therefor
US6563558B2 (en) 1997-11-18 2003-05-13 Sanyo Electric Co., Ltd. Liquid crystal display with light shielding film
US6693301B2 (en) 1991-10-16 2004-02-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving and manufacturing the same
US6800875B1 (en) 1995-11-17 2004-10-05 Semiconductor Energy Laboratory Co., Ltd. Active matrix electro-luminescent display device with an organic leveling layer
US6893906B2 (en) 1990-11-26 2005-05-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US6911688B2 (en) 2002-04-15 2005-06-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device and manufacturing method thereof
US6960786B2 (en) 2002-05-13 2005-11-01 Semiconductor Energy Laboratory Co., Ltd. Display device
US6963382B1 (en) 1995-11-17 2005-11-08 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display and method of driving same
US6992332B2 (en) 2002-05-15 2006-01-31 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method for manufacturing the same
US7038239B2 (en) 2002-04-09 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US7071910B1 (en) 1991-10-16 2006-07-04 Semiconductor Energy Laboratory Co., Ltd. Electrooptical device and method of driving and manufacturing the same
US7116302B2 (en) 1991-10-16 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Process of operating active matrix display device having thin film transistors
US7154147B1 (en) * 1990-11-26 2006-12-26 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US7169657B2 (en) 1992-03-26 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
US7242021B2 (en) 2002-04-23 2007-07-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display element using semiconductor device
US7253437B2 (en) 1990-12-25 2007-08-07 Semiconductor Energy Laboratory Co., Ltd. Display device having a thin film transistor
US7253440B1 (en) 1991-10-16 2007-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having at least first and second thin film transistors
US8012782B2 (en) 1995-03-18 2011-09-06 Semiconductor Energy Laboratory Co., Ltd. Method for producing display device
US8835271B2 (en) 2002-04-09 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US9366930B2 (en) 2002-05-17 2016-06-14 Semiconductor Energy Laboratory Co., Ltd. Display device with capacitor elements

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63104026A (en) * 1986-10-21 1988-05-09 Nec Corp Manufacture of liquid crystal display device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63104026A (en) * 1986-10-21 1988-05-09 Nec Corp Manufacture of liquid crystal display device

Cited By (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7462515B2 (en) 1990-11-13 2008-12-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
JPH04177325A (en) * 1990-11-13 1992-06-24 Semiconductor Energy Lab Co Ltd Liquid crystal display device
JPH04177326A (en) * 1990-11-13 1992-06-24 Semiconductor Energy Lab Co Ltd Liquid crystal display device and driving method thereof
US6369788B1 (en) 1990-11-26 2002-04-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US5899547A (en) * 1990-11-26 1999-05-04 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US5905555A (en) * 1990-11-26 1999-05-18 Semiconductor Energy Laboratory Co., Ltd. Active matrix type electro-optical device having leveling film
US7154147B1 (en) * 1990-11-26 2006-12-26 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US5946059A (en) * 1990-11-26 1999-08-31 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US6893906B2 (en) 1990-11-26 2005-05-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US7253437B2 (en) 1990-12-25 2007-08-07 Semiconductor Energy Laboratory Co., Ltd. Display device having a thin film transistor
US7375375B2 (en) 1990-12-25 2008-05-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US5963278A (en) * 1991-03-26 1999-10-05 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for driving the same
US5933205A (en) * 1991-03-26 1999-08-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for driving the same
US5956105A (en) * 1991-06-14 1999-09-21 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US7253440B1 (en) 1991-10-16 2007-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having at least first and second thin film transistors
US7116302B2 (en) 1991-10-16 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Process of operating active matrix display device having thin film transistors
US6759680B1 (en) 1991-10-16 2004-07-06 Semiconductor Energy Laboratory Co., Ltd. Display device having thin film transistors
US6693301B2 (en) 1991-10-16 2004-02-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving and manufacturing the same
US7071910B1 (en) 1991-10-16 2006-07-04 Semiconductor Energy Laboratory Co., Ltd. Electrooptical device and method of driving and manufacturing the same
US8035773B2 (en) 1992-03-04 2011-10-11 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US7123320B2 (en) 1992-03-04 2006-10-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US6618105B2 (en) 1992-03-04 2003-09-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US6195139B1 (en) 1992-03-04 2001-02-27 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US7169657B2 (en) 1992-03-26 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
US7781271B2 (en) 1992-03-26 2010-08-24 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
US5486939A (en) * 1994-04-28 1996-01-23 Xerox Corporation Thin-film structure with insulating and smoothing layers between crossing conductive lines
US5721601A (en) * 1994-09-29 1998-02-24 Sanyo Electric Co., Ltd. Display units having two insolating films and a planarizing film and process for producing the same
US6429053B1 (en) 1994-12-27 2002-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device method of fabricating same, and, electrooptical device
US6242758B1 (en) 1994-12-27 2001-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device employing resinous material, method of fabricating the same and electrooptical device
US8012782B2 (en) 1995-03-18 2011-09-06 Semiconductor Energy Laboratory Co., Ltd. Method for producing display device
US6867434B2 (en) 1995-11-17 2005-03-15 Semiconductor Energy Laboratory Co., Ltd. Active matrix electro-luminescent display with an organic leveling layer
US6963382B1 (en) 1995-11-17 2005-11-08 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display and method of driving same
US6800875B1 (en) 1995-11-17 2004-10-05 Semiconductor Energy Laboratory Co., Ltd. Active matrix electro-luminescent display device with an organic leveling layer
US9213193B2 (en) 1995-11-17 2015-12-15 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display and method of driving
US6445059B1 (en) 1995-12-14 2002-09-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6441468B1 (en) 1995-12-14 2002-08-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6787887B2 (en) 1995-12-14 2004-09-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6157428A (en) * 1997-05-07 2000-12-05 Sanyo Electric Co., Ltd. Liquid crystal display
US6204905B1 (en) 1997-11-18 2001-03-20 Sanyo Electric Co., Ltd. Vertical alignment liquid crystal display device having planarized substrate surface
US6246458B1 (en) 1997-11-18 2001-06-12 Sanyo Electric Co., Ltd. Method for manufacturing liquid crystal display
US6362864B2 (en) 1997-11-18 2002-03-26 Sanyo Electric Co., Ltd. Vertical alignment liquid crystal display device having planarized substrate surface
US6563558B2 (en) 1997-11-18 2003-05-13 Sanyo Electric Co., Ltd. Liquid crystal display with light shielding film
WO2002095834A1 (en) * 2001-05-18 2002-11-28 Sanyo Electric Co., Ltd. Thin film transistor and active matrix type display unit production methods therefor
US6995048B2 (en) 2001-05-18 2006-02-07 Sanyo Electric Co., Ltd. Thin film transistor and active matrix type display unit production methods therefor
US8946717B2 (en) 2002-04-09 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US10083995B2 (en) 2002-04-09 2018-09-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US10050065B2 (en) 2002-04-09 2018-08-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US9666614B2 (en) 2002-04-09 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US9406806B2 (en) 2002-04-09 2016-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US9105727B2 (en) 2002-04-09 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US8946718B2 (en) 2002-04-09 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US8835271B2 (en) 2002-04-09 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US7038239B2 (en) 2002-04-09 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US6911688B2 (en) 2002-04-15 2005-06-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device and manufacturing method thereof
US7148510B2 (en) 2002-04-15 2006-12-12 Semiconductor Energy Laboratory Co. Ltd. Electronic apparatus having a protective circuit
US7242021B2 (en) 2002-04-23 2007-07-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display element using semiconductor device
US9165991B2 (en) 2002-05-13 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Display device
US7554116B2 (en) 2002-05-13 2009-06-30 Semiconductor Energy Laboratory Co., Ltd. Display device
US6960786B2 (en) 2002-05-13 2005-11-01 Semiconductor Energy Laboratory Co., Ltd. Display device
US8927994B2 (en) 2002-05-13 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Display device
US9508756B2 (en) 2002-05-13 2016-11-29 Semiconductor Energy Laboratory Co., Ltd. Display device
US9966390B2 (en) 2002-05-13 2018-05-08 Semicondutcor Energy Laboratory Co., LTD. Display device
US7723179B2 (en) 2002-05-15 2010-05-25 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method for manufacturing the same
US6992332B2 (en) 2002-05-15 2006-01-31 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method for manufacturing the same
US9366930B2 (en) 2002-05-17 2016-06-14 Semiconductor Energy Laboratory Co., Ltd. Display device with capacitor elements
US10133139B2 (en) 2002-05-17 2018-11-20 Semiconductor Energy Laboratory Co., Ltd. Display device

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